A laser system including: A. a laser apparatus configured to output a pulse laser beam; B. an optical pulse stretcher including a delay optical path for expanding a pulse width of the pulse laser beam; and C. a phase optical element included in the delay optical path and having a function of spatially and randomly shifting a phase of the pulse laser beam. The phase optical element includes a plurality of types of cells providing different amounts of phase shift to the pulse laser beam and arranged irregularly in any direction.

Disclosed is a system for generating wavelength-tunable, ultra-short light pulses within the visible or infrared light spectrum. The system includes an injection module including a light source and a wavelength-tunable spectral filter. The light source is suitable for generating short light pulses, having a duration measured in nanoseconds, within an emission spectrum having a spectral width of several tens of nanometers to several hundred nanometers. The spectral filter has a spectral width between 250 pm and 3 nm and is suitable for spectrally and temporally filtering the short light pulses such that the injection module generates wavelength-tunable, spectrally filtered, ultra-short light pulses. The system also includes at least one optical amplifier suitable for generating wavelength-tunable, ultra-short, amplified pulses based on the wavelength of the spectral filter.

A method and apparatus for control of a dose of extreme ultraviolet (EUV) radiation generated by a laser produced plasma (LPP) EUV light source. Each laser pulse is modulated to be of a width that is determined to be sufficient to allow for extraction of a suitable uniform amount of energy in the laser source gain medium; in some embodiments the suitable uniform amount of energy to be extracted may be selected to avoid self-lasing. The EUV energy created by each pulse is measured and total EUV energy created by the fired pulses determined, and a desired energy for the next pulse is determined based upon whether the total EUV energy is greater or less than a desired average EUV energy times the number of pulses. The energy of the next pulse is modulated, either by modulating its magnitude or by modulating the amplification of the pulse by one or more amplifiers, but without decreasing the determined width of the laser pulse.

In one aspect, the present disclosure describes a fiber laser system for the generation and delivery of femtosecond (fs) pulses in multiple wavelength ranges. For improved versatility in multi-photon microscopy, an example of a dual wavelength fiber system based on Nd fiber source providing gain at 920 and 1060 nm is described. An example of a three-wavelength system is included providing outputs at 780 nm, 940 nm, and 1050 nm. The systems include dispersion compensation so that high quality fs pulses are provided for applications in microscopy, for example in multiphoton microscope (MPM) systems.

The present invention discloses a high-peak-power single-frequency narrow-linewidth nanosecond fiber laser based on a triangular pulse, wherein the laser includes: pulsed laser generated by the laser seed injecting into a first power pre-amplifier through a first isolator, and then injecting into a second pre-amplifier and then injecting into a power amplifier; wherein triangle-shaped pulsed laser with fast rising edge is obtained by using electro-optic and acousto-optic modulator to modulate continuous wave single-frequency laser or a single-frequency semiconductor laser directly modulated by radio frequency signal; single-frequency triangle-shaped pulsed laser is employed as the laser source according to the characteristics of narrow intrinsic linewidth and suppression of linewidth broadening caused by SPM, and the power of pulsed laser is amplified through the MOPA system.

The present disclosure provides a narrow-pulse-width pulse laser, including a circuit substrate, a laser chip, one or more capacitors, and a field effect transistor. Each of the field effect transistor, the capacitor, and the laser chip is electrically connected to the circuit substrate. The capacitors are arranged between the field effect transistor and the laser chip along an extension direction of a gap between the field effect transistor and the laser chip. The circuit substrate may include a first conductor layer; a second conductor layer; and an insulating layer arranged between the first conductor layer and the second conductor layer, wherein the first conductor layer and the second conductor layer are electrically connected through a via hole in the insulating layer.

Disclosed is a semiconductor laser device assembly including a semiconductor laser device; and a dispersion compensation optical system, where a laser light exited from the semiconductor laser device is incident and exits to control a group velocity dispersion value of the laser light exited from the semiconductor laser device per wavelength.

The invention is a passively mode-locked ultrashort pulse fiber laser for generating ultrashort laser pulses, including a resonator in a figure-of-eight configuration, wherein the resonator has a main ring and a secondary ring optically coupled thereto designed as a non-linear Sagnac interferometer, and wherein the main ring and the secondary ring are constructed of polarization-maintaining optical fibers, and the main ring and/or secondary ring have a fiber section designed as a laser-active medium, wherein the laser-active medium is optically pumped through an externally-coupled pump light source which is also comprised, wherein the ultrashort pulse fiber laser is developed in that a separate optical unit is provided in the resonator as a dispersion compensation unit for compensating a group delay dispersion of the ultrashort laser pulses.

An optical device including an acousto-optic modulator (AOM), a laser, an upstream optical fibre extending between the laser and the AOM, a downstream optical fibre located downstream of the AOM and a reflector connected to the fibre downstream of the AOM. The optical device including the upstream fibre is a polarisation-maintaining optical fibre, and/or the downstream fibre is arranged so that a transit time of the optical beam through said downstream fibre from the AOM to the reflecting means is nonzero and shorter than or equal to half an open duration of the AOM, and/or the AOM includes a crystal in which the entrance/exit faces are planar and are at a nonzero angle to each other, and/or at least one of the two entrance/exit faces is at a nonzero angle to a direction of propagation of the acoustic wave in the crystal.

The present invention discloses a high-peak-power single-frequency narrow-linewidth nanosecond fiber laser based on a triangular pulse, wherein the laser includes: pulsed laser generated by the laser seed injecting into a first power pre-amplifier through a first isolator, and then injecting into a second pre-amplifier and then injecting into a power amplifier; wherein triangle-shaped pulsed laser with fast rising edge is obtained by using electro-optic and acousto-optic modulator to modulate continuous wave single-frequency laser or a single-frequency semiconductor laser directly modulated by radio frequency signal; single-frequency triangle-shaped pulsed laser is employed as the laser source according to the characteristics of narrow intrinsic linewidth and suppression of linewidth broadening caused by SPM, and the power of pulsed laser is amplified through the MOPA system.