A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Methods, systems, and apparatus, for an external cavity FP laser. In one aspect, an apparatus is provided that includes a FP laser diode; a Faraday rotator (FR) coupled to receive an optical output of the FP laser diode and that rotates a polarization of the optical output; an optical fiber coupled at a first end to receive the output of the FR; a WDM filter coupled to a second end of the optical fiber to receive the optical signal from the optical fiber; and a FRM coupled directly or indirectly to an output of the WDM filter, wherein an optical output of the WDM filter is partially reflected by the FRM such that the polarization of a reflected beam is rotated, and wherein the reflected optical signal then passes through the FR with its polarization being rotated by the FR before it is injected back into the FP laser diode.

A vertical-cavity surface-emitting laser (VCSEL) includes first reflector having a first reflectivity; a second reflector having a second reflectivity, where the second reflectivity is less than the first reflectivity; a gain region between the first and second reflectors; and a substrate having a first surface and a second surface, where the first surface is coupled to the second reflector, and where the second surface is formed into a lens to act upon light emitted the VCSEL through the substrate. The VCSEL lases in a single transverse mode.

Methods, systems, and apparatus, for an external cavity FP laser. In one aspect, an apparatus is provided that includes a FP laser diode; a Faraday rotator (FR) coupled to receive an optical output of the FP laser diode and that rotates a polarization of the optical output; an optical fiber coupled at a first end to receive the output of the FR; a WDM filter coupled to a second end of the optical fiber to receive the optical signal from the optical fiber; and a FRM coupled directly or indirectly to an output of the WDM filter, wherein an optical output of the WDM filter is partially reflected by the FRM such that the polarization of a reflected beam is rotated, and wherein the reflected optical signal then passes through the FR with its polarization being rotated by the FR before it is injected back into the FP laser diode.

The coordinates of an unit configuration region R11 is (X1, Y1), and the coordinates of an unit configuration region Rmn is (Xm, Yn) (m and n are natural numbers). Rotation angles with respect to a center of apexes of an isosceles triangle are different according to coordinates, and at least three different rotation angles are contained in all of the photonic crystal layer.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A semiconductor laser element is realized with high beam quality (index M.sup.2<1). A diffraction grating 6ba of a diffraction grating layer 6 extends along a principal surface 2a and is provided on a p-side surface 6a of the diffraction grating layer 6; the refractive index of the diffraction grating layer 6 periodically varies in directions extending along the principal surface 2a, in the diffraction grating 6ba; the diffraction grating 6ba has a plurality of holes 6b; the plurality of holes 6b are provided in the p-side surface 6a and arranged in translational symmetry along a square lattice R3; the plurality of holes 6b each have the same size and shape; each hole 6b corresponds to a lattice point of the diffraction grating 6ba and is of a triangular prism shape; a shape of a bottom face 6c of the hole 6b is an approximate right triangle.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.