A semiconductor laser module comprises a tapered laser diode and/or a tapered amplifier diode equipped with beam shaping optics. The tapered laser diode and/or the tapered amplifier diode includes an emission facet for emitting a laser beam along a beam axis. The beam-shaping optics comprise a plano-convex cylindrical lens oriented so as to change divergence of the beam in the fast axis direction, the plano-convex spherical cylindrical lens having a planar surface arranged facing the facet and a circular cylindrical surface facing away from the facet. The refractive index of lens may be uniform throughout the entire lens. Alternatively, the lens may have a refractive index varying in the direction of the slow axis and/or in the direction of the fast axis.

A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.

A light-emitting device comprising VCSELs formed in a die. The VCSEL distribution is characterized by an essentially linear decrease in VCSEL density over the die from a highest VCSEL density in a first die region to a lowest VCSEL density in another die region. The VCSELs share a common anode and a common cathode for collective switching of the plurality of VCSELs. A method of manufacturing such a VCSEL die is also described.

The present disclosure relates to a diode laser having reduced beam divergence. Some implementations reduce a beam divergence in the far field by means of a deliberate modulation of the real refractive index of the diode laser. An area of the diode laser (e.g., the injection zone), may be structured with different materials having different refractive indices. In some implementations, the modulation of the refractive index makes it possible to excite a supermode, the field of which has the same phase (in-phase mode) under the contacts. Light, which propagates under the areas of a lower refractive index, obtains a phase shift of π after passing through the index-guiding trenches. Consequently, the in-phase mode is supported and the formation of the out-of-phase mode is prevented. Consequently, the laser field can, in this way, be stabilized even at high powers such that only a central beam lobe remains in the far field.

A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

A broad area laser diode is configured to include an anti-guiding layer located outside of the active region of the device. The anti-guiding layer is formed of a high refractive index material that serves to de-couple unwanted, higher-order lateral modes (attributed to thermal lensing problems) from the lower-order mode output beam of output signal from the laser diode. The anti-guiding layer is formed using a single epitaxial growth step either prior to or subsequent to the steps used to grow the epitaxial layers forming the laser diode itself, thus creating a structure that provides suppression of unwanted higher-order modes without requiring a modification of specific process steps used to fabricate the laser diode itself.

A photonic circuit with a hybrid III-V on silicon or silicon-germanium active section, that comprises an amplifying medium with a III-V heterostructure (1, QW, 2) and an optical wave guide. The wave guide comprises a coupling section (31) facing a central portion of the amplifying medium, a propagation section (34, 35) and a modal transition section (32, 33) arranged between the coupling section and the propagation section. In the modal transition section, the optical wave guide widens progressively from the propagation section towards the coupling section.

A laser element includes a photonic crystal layer on which laser light is incident. The photonic crystal layer includes a base layer formed of a first refractive index medium; and a plurality of different refractive index regions formed of a second refractive index medium having a refractive index different from that of the first refractive index medium and disposed in the base layer. The plurality of different refractive index regions includes a first different refractive index region of which a planar shape is an approximate circle, an approximate square, or an approximate polygon having a rotational symmetry of 90° and a first area perpendicular to a thickness direction; and a second different refractive index region having a second area perpendicular to a thickness direction.