A vertical cavity surface emitting laser (VCSEL) array is fabricated to produce multiple wavelengths. A first distributed Bragg reflector (DBR) is formed on a substrate, and an optical layer having an active region is formed on the first DBR. The optical layer has a variation in optical characteristic configured to generate multiple wavelengths. To do this, a first portion of the layer is formed on the first DBR. Different dimensioned features (profiles, wells, trenches, gratings, etc.) are then formed on a surface of the first portion. Subsequently, a second portion of the layer is formed by filling in the dimensioned features on the first portion's surface. Finally, a second DBR is formed on the second portion of the layer. The variation in optical characteristic can include variation in refractive index, physical thickness, or both. The assembly can be processed as usual to produce a VCSEL array having multiple emitters.

In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer and a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material.

A semiconductor device fabrication method in which a growing process is followed by a capping process in which a phosphor containing material cap layer is deposited over a final GaAs based layer. The wafer, containing many such substrates, can be removed from the reaction chamber to continue processing at a later time without creating an oxide layer on the final GaAs based layer. In continuing processing, a decomposition process selectively decomposes the phosphor containing material cap layer, after which a regrowing process is performed to grow additional layers of the device structure. The capping, decomposition and regrowth processes can be repeated multiple times on the semiconductor devices on the wafer during device fabrication.

A light emitting device has a columnar portion including a light emitting layer, and: (ba)/L1>(dc)/L2; a<b; c<d; and a<d, where a is the columnar portion's maximum width as viewed in a laminating direction, at a first position of the columnar portion closest to the substrate in the laminating direction, b is the columnar portion's maximum width, at a second position of the light emitting layer closest to the substrate, c is the columnar portion's maximum width, at a third position of the light emitting layer farthest from the substrate, d is the columnar portion's maximum width, at a fourth position of the columnar portion farthest from the substrate, and L1 is a distance between the first and second positions and L2 is a distance between the third and fourth positions.

Alight emitting device includes a substrate, and a stacked body provided to the substrate, and including a columnar part aggregate constituted by p columnar parts, wherein the stacked body includes a plurality of the columnar part aggregates, the p columnar parts each have a light emitting layer, a diagram configured by respective centers of the plurality of columnar parts has rotation symmetry when viewed from a stacking direction of the stacked body, a diametrical size of q columnar parts out of the p columnar parts is different from a diametrical size of r columnar parts out of the p columnar parts, a shape of the columnar part aggregate is not rotation symmetry, the p is an integer not less than 2, the q is an integer not less than 1 and less than the p, and the r is an integer satisfying r=pq.

A method of producing a semiconductor laser device includes the steps of preparing first and second substrate products each of which includes a substrate and a stacked semiconductor layer formed on the substrate, the first and second substrate products being different from each other; etching the first substrate product with a chlorine-based gas in a vacuum chamber by using a dry etching method; evacuating the vacuum chamber while monitoring the pressure of hydrogen chloride in the vacuum chamber so as to obtain a partial pressure of the hydrogen chloride within a predetermined range; after evacuating the vacuum chamber, introducing the second substrate product into the vacuum chamber while maintaining a vacuum state inside the vacuum chamber; and etching the second substrate product with a chlorine-based gas in the vacuum chamber by using the dry etching method.

In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer end a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material.

A VCSEL can include: an active region configured to emit light; a blocking region over or under the active region, the blocking region defining a plurality of channels therein; a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region; a top electrical contact; and a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores. At least one conductive channel core is a light emitter, and others can be spare light emitters, photodiodes, modulators, and combinations thereof. A waveguide can optically couple two or more of the conductive channel cores. In some aspects, the plurality of conductive channel cores are optically coupled to form a common light emitter that emits light (e.g., single mode) from the plurality of conductive channel cores.

A method for fabricating a nanostructure comprises the steps of growing a first nanowire on a substrate, forming a dielectric layer on the substrate, the dielectric layer surrounding the first nanowire, wherein a thickness of the dielectric layer is smaller than a length of the first nanowire, and removing the first nanowire from the dielectric layer, thereby exposing an aperture in the dielectric layer.

The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.