A light emitting apparatus includes a laminated structure provided at a substrate and including a plurality of columnar sections. The plurality of columnar sections each includes a light emitting layer including a plurality of first well layers, a first semiconductor layer provided between the substrate and the light emitting layer and containing Ga and N, an optical confining layer provided between the first semiconductor layer and the light emitting layer and confining light in the light emitting layer, and a second well layer provided between the first semiconductor layer and the optical confining layer. The first well layers and the second well layer are made of InGaN. The optical confining layer includes an InGaN layer. The composition formula of the first well layers is In.sub.xGa.sub.1-xN. The composition formula of the InGaN layer of the optical confining layer is In.sub.yGa.sub.1-yN. The composition formula of the second well layer is In.sub.zGa.sub.1-zN. The parameters x, y, and z satisfy 0<y<z<x<1.

A light emitting apparatus includes a substrate and a laminated structure provided at a substrate surface of the substrate and including a plurality of columnar sections. The columnar sections each include a light emitting layer which has a first end facing the substrate and a second end facing away from the substrate. A first cross section of each of the columnar sections taken along the directions perpendicular to the lamination direction of the laminated structure includes the first end. A second cross section of each of the columnar sections taken along the directions perpendicular to the lamination direction is a cross section that is part of the light emitting layer and located at a position shifted from the first cross section toward the side away from the substrate in the lamination direction. In the plan view viewed in the lamination direction, the position of the center of the first cross section differs from the position of the center of the second cross section.

The light emitting device includes a substrate, and a laminated structure including columnar parts, wherein the columnar parts include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the light emitting layer has a c-plane and a facet plane, the second semiconductor layer is disposed on the c-plane and the facet plane, the first semiconductor layer has a first portion and a second portion smaller in diametrical size than the first portion, the second portion is disposed between the substrate and the first portion, and the c-plane and the second portion overlap each other, and the c-plane is smaller in diametrical size than the second portion in a plan view from a stacking direction of the first semiconductor layer and the light emitting layer.

A semiconductor laser device, which outputs laser light, includes: a substrate; an n-type semiconductor layer disposed above the substrate; a light emitting layer disposed above the n-type semiconductor layer; a p-type semiconductor layer disposed above the light emitting layer; and at least one p electrode disposed above the p-type semiconductor layer. At least one groove is formed that extends from an upper surface of the p-type semiconductor layer to reach a lower surface of the light emitting layer, and extends in a resonance direction of the laser light. A remaining length, which is a distance between an output end face from which the laser light is outputted and a portion of each groove that is closest to the at least one p electrode, is longer than a non-injection region length, which is a distance between the output end face and the at least one p electrode.

A distributed feedback (DFB) laser that includes a substrate comprising a first surface and a second surface, wherein the substrate comprises silicon; a plurality of shallow trench isolations (STIs) located over the second surface of the substrate; a grating region located over the plurality of STIs and the substrate, wherein the grating region comprises a III-V semiconductor material; a non-intentional doping (NID) region located over the grating region; and a contact region located over the NID region.

A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.

A method for flattening a surface on an epitaxial lateral overgrowth (ELO) layer, resulting in obtaining a smooth surface with island-like III-nitride semiconductor layers. The island-like III-nitride semiconductor layers are formed by stopping the growth of the ELO layers before they coalesce to each other. Then, a growth restrict mask is removed before at least some III-nitride device layers are grown. Removing the mask decreases an excess gases supply to side facets of the island-like III-nitride semiconductor layers, which can help to obtain a smooth surface on the island-like III-nitride semiconductor layers. The method also avoids compensation of a p-type layer by decomposed n-type dopant from the mask, such as Silicon and Oxygen atoms.

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

A laser includes an active region surrounded by first and second waveguide layers. Two or more mask openings are formed within a dielectric layer on a surface parallel to the active region. A refractive grating is formed on the dielectric mask openings and includes three-dimensional grating features spaced apart in the light-propagation direction of the laser. The refractive grating provides modulation of a real part of the effective refractive index of the laser and modulation of the imaginary part is provided by modulation of the current flow through the mask openings.

A distributed feedback (DFB) laser that includes a substrate comprising a first surface and a second surface, wherein the substrate comprises silicon; a plurality of shallow trench isolations (STIs) located over the second surface of the substrate; a grating region located over the plurality of STIs and the substrate, wherein the grating region comprises a III-V semiconductor material; a non-intentional doping (NID) region located over the grating region; and a contact region located over the NID region.