Patent classifications
H01T1/20
Lightning and overvoltage protection device for data networks, telephony services, electroacoustic installations or bus systems
The invention relates to a lightning and overvoltage protection device for data networks, telephony services, electroacoustic installations or bus systems having at least two grid-side input terminals and at least two output terminals, to which the load that is to be protected can be connected, furthermore having a gas-discharge surge arrester that connects the input terminals and an inductance located between the respective input and output terminal. According to the invention, the inductances are configured as current-compensated inductors having a core and a primary winding and a secondary winding, wherein the load current flows through the windings in different directions so that the respective magnetic fields cancel out. In the event of transient overvoltages, the arising surge current is bypassed by means of a switching device that then closes at one of the two windings, for example the secondary winding, in such a way that, owing to the winding through which current flows, for example the primary winding, the core reaches saturation and the coupling between the windings is released, with the result that no voltage is established across the load and the voltage applied to the winding through which current flows ignites the gas-discharge surge arrester.
Lightning and overvoltage protection device for data networks, telephony services, electroacoustic installations or bus systems
The invention relates to a lightning and overvoltage protection device for data networks, telephony services, electroacoustic installations or bus systems having at least two grid-side input terminals and at least two output terminals, to which the load that is to be protected can be connected, furthermore having a gas-discharge surge arrester that connects the input terminals and an inductance located between the respective input and output terminal. According to the invention, the inductances are configured as current-compensated inductors having a core and a primary winding and a secondary winding, wherein the load current flows through the windings in different directions so that the respective magnetic fields cancel out. In the event of transient overvoltages, the arising surge current is bypassed by means of a switching device that then closes at one of the two windings, for example the secondary winding, in such a way that, owing to the winding through which current flows, for example the primary winding, the core reaches saturation and the coupling between the windings is released, with the result that no voltage is established across the load and the voltage applied to the winding through which current flows ignites the gas-discharge surge arrester.
Krypton-85-free spark gap with a discharge probe
Embodiments of the present disclosure relate to a spark gap device that includes a first electrode having a first surface and a second electrode having a second surface offset from and facing the first surface. The spark gap device also includes a light source configured to emit light toward at least the first surface such that photons emitted by the light source when the spark gap is operated are incident on the first surface and cause electron emission from the first surface. The light source includes a discharge probe having a third electrode sealed in a tube filled with an inert gas. The spark gap device may not include a radioactive component.
Krypton-85-free spark gap with a discharge probe
Embodiments of the present disclosure relate to a spark gap device that includes a first electrode having a first surface and a second electrode having a second surface offset from and facing the first surface. The spark gap device also includes a light source configured to emit light toward at least the first surface such that photons emitted by the light source when the spark gap is operated are incident on the first surface and cause electron emission from the first surface. The light source includes a discharge probe having a third electrode sealed in a tube filled with an inert gas. The spark gap device may not include a radioactive component.
SPARK PLUGS VIA SURFACE MODIFICATIONS
Lean-burn engines are important due to their ability to reduce emissions, increase fuel efficiency, and mitigate engine knock. Embodiments of a spark plug with a nanostructured electrode extend the lean flammability limit of natural gas. A nano-/micro-morphology modification is applied on a surface of the spark plug electrode to increase its surface roughness. Measurements indicate that the lean flammability limit of spark-ignited methane can be lowered by modulating the surface roughness of the spark plug electrode with nanostructures.
SURGE PROTECTIVE DEVICE
A surge protective device of the present invention includes an insulating tube 2, a pair of sealing electrodes 3 for closing openings on both ends of the insulating tube so as to seal a discharge control gas inside the tube, wherein the pair of sealing electrodes has a pair of convex electrode portions 5 projecting inwardly so as to face to each other, and at least one projecting part 2a projecting inwardly in a radial direction and extending in a circumferential direction is formed on the inner circumferential surface of the insulating tube.
Arrester
An arrester is disclosed. In an embodiment an arrester includes at least one first and one second electrode, a ceramic body for electrical isolation of the electrodes, wherein the electrodes are spaced by a distance from one another in a direction of a transverse axis of the arrester, and wherein the distance between the electrodes varies along a longitudinal axis of the arrester.
Arrester
An arrester is disclosed. In an embodiment an arrester includes at least one first and one second electrode, a ceramic body for electrical isolation of the electrodes, wherein the electrodes are spaced by a distance from one another in a direction of a transverse axis of the arrester, and wherein the distance between the electrodes varies along a longitudinal axis of the arrester.
Electrostatic discharge protection device and method of manufacturing the same
An ESD protection device includes an insulating substrate, first and second discharge electrodes in contact with the insulating substrate, the first and second discharge electrodes separated from each other and opposing each other, first and second outer electrodes on an outside surface of the insulating substrate, the first outer electrode being electrically connected to the first discharge electrode and the second outer electrode being electrically connected to the second discharge electrode, and a discharge auxiliary electrode spanning the first discharge electrode and the second discharge electrode in a region where the discharge electrodes oppose each other. The discharge auxiliary electrode includes semiconductor particles and metal particles. An average particle diameter of the metal particles is about 0.3 m to about 1.5 m. A density of the metal particles is greater than or equal to about 20 particles/50 m.sup.2 and the semiconductor particles include an oxygen-containing layer on surfaces of the semiconductor particles.
Electrostatic discharge protection device and method of manufacturing the same
An ESD protection device includes an insulating substrate, first and second discharge electrodes in contact with the insulating substrate, the first and second discharge electrodes separated from each other and opposing each other, first and second outer electrodes on an outside surface of the insulating substrate, the first outer electrode being electrically connected to the first discharge electrode and the second outer electrode being electrically connected to the second discharge electrode, and a discharge auxiliary electrode spanning the first discharge electrode and the second discharge electrode in a region where the discharge electrodes oppose each other. The discharge auxiliary electrode includes semiconductor particles and metal particles. An average particle diameter of the metal particles is about 0.3 m to about 1.5 m. A density of the metal particles is greater than or equal to about 20 particles/50 m.sup.2 and the semiconductor particles include an oxygen-containing layer on surfaces of the semiconductor particles.