A fall-off protection and reverse-connection protection system and method for a connecting clamp of an automobile starting power supply. The system has an internal battery, a switching circuit, an access device, a connecting clamp, an MCU control circuit, a voltage division circuit for external battery detection, an output connecting clamp current detection circuit and an anti-reverse-connection protection circuit. In the method, voltage conditions of an external power supply can be effectively detected and different operating actions are taken based on the voltage conditions of the external power supply, thus ensuring normal startup.

There is provided an electronic control unit capable of detecting an abnormality of a dark current while suppressing increase in the size of a circuit. The electronic control unit includes a control unit that operates with a current supplied via a power-supply input terminal from a battery, and a diode arranged on a power supply path connecting the power-supply input terminal with the control unit and serving as a reverse connection protection element that prevents a reverse current when the battery is reversely connected to the power-supply input terminal, and detects an abnormality of a dark current flowing through the diode based on a voltage difference between a voltage on the power-supply input terminal side of the diode and a voltage on the control unit side.

There is provided an electronic control unit capable of detecting an abnormality of a dark current while suppressing increase in the size of a circuit. The electronic control unit includes a control unit that operates with a current supplied via a power-supply input terminal from a battery, and a diode arranged on a power supply path connecting the power-supply input terminal with the control unit and serving as a reverse connection protection element that prevents a reverse current when the battery is reversely connected to the power-supply input terminal, and detects an abnormality of a dark current flowing through the diode based on a voltage difference between a voltage on the power-supply input terminal side of the diode and a voltage on the control unit side.

A wireless electric vehicle charging system comprises base-side equipment for generating a magnetic field and vehicle-side equipment for receiving energy via the magnetic field to supply power to a vehicle-driving battery. Monitoring circuitry monitors one or more of voltage, current, or phase associated with the base-side equipment and halts generation of the magnetic field in response to a change in the voltage, current, or phase associated with the operation of the base-side equipment that indicates a fault condition at the vehicle-side equipment, which may include a loss of power or disconnection of a battery. Based on detection of the change, the monitoring circuitry can halt generation of the magnetic field to prevent damage at the vehicle-side equipment.

A wireless electric vehicle charging system comprises base-side equipment for generating a magnetic field and vehicle-side equipment for receiving energy via the magnetic field to supply power to a vehicle-driving battery. Monitoring circuitry monitors one or more of voltage, current, or phase associated with the base-side equipment and halts generation of the magnetic field in response to a change in the voltage, current, or phase associated with the operation of the base-side equipment that indicates a fault condition at the vehicle-side equipment, which may include a loss of power or disconnection of a battery. Based on detection of the change, the monitoring circuitry can halt generation of the magnetic field to prevent damage at the vehicle-side equipment.

Systems and methods described herein provide a sensor integrated circuit (IC) having a high voltage bi-directional current source and disconnect switch that are configured to suppress undesirable voltage artifacts. The sensor IC can include a power pin for coupling to an external power supply, a reference pin, and a functional circuit. The bi-directional current source can be disposed in a current path between the power pin and an energy storage device and be configured to control a current flow to the energy storage device and a current flow from the energy storage device.

Described is an apparatus which comprises: one or more signal lines; a transceiver coupled to the one or more signal lines; and a bias generation circuit to provide one or more bias voltages for the transceiver to tri-state the transceiver according to signal attributes of the one or more signal lines.

Described is an apparatus which comprises: one or more signal lines; a transceiver coupled to the one or more signal lines; and a bias generation circuit to provide one or more bias voltages for the transceiver to tri-state the transceiver according to signal attributes of the one or more signal lines.

A high-voltage output driver (1) for a sensor device (100) with reverse current blocking comprises a supply node (SN) to apply a supply voltage (VHV) and an output node (OP) to provide an output signal (OS) of the high-voltage output driver (1). The high-voltage output driver (1) comprises a driver transistor (MP0) being disposed between the supply node (SN) and the output node (OP). The high-voltage output driver (1) further comprises a bulk control circuit (20) to apply a bulk control voltage (Vwell) to a bulk node (BMP0) of the driver transistor (MP0), and a gate control circuit (30) to apply a gate control voltage (GCV) to thegate node (GMP0) of the driver transistor (MP0).

A high-voltage output driver (1) for a sensor device (100) with reverse current blocking comprises a supply node (SN) to apply a supply voltage (VHV) and an output node (OP) to provide an output signal (OS) of the high-voltage output driver (1). The high-voltage output driver (1) comprises a driver transistor (MP0) being disposed between the supply node (SN) and the output node (OP). The high-voltage output driver (1) further comprises a bulk control circuit (20) to apply a bulk control voltage (Vwell) to a bulk node (BMP0) of the driver transistor (MP0), and a gate control circuit (30) to apply a gate control voltage (GCV) to thegate node (GMP0) of the driver transistor (MP0).