An electric connection box that has a function of relaying power of power supply supplied from an input-side power supply line and supplying the relayed power of power supply to an output-side load on a vehicle, that includes a first circuit unit, a second circuit unit, and an air blower configured to blow air to the first circuit unit, and in which the first circuit unit and the second circuit unit are arranged in a state of being close to each other, the electric connection box includes: a gap portion that is a space formed on a boundary between the first circuit unit and the second circuit unit; and an airflow guide portion configured to guide an airflow blown by the air blower to both the first circuit unit and the gap portion.

EMI noise is reduced and a component mounting area is suppressed, and downsizing of a power supply device is achieved. Power supply device includes transistor block, gate drive circuit block, and driver block. First gate terminal and second gate terminal are disposed on the same side as gate drive circuit block when viewed from a center of transistor block. Two output terminals are disposed on the same side as transistor block when viewed from a center of gate drive circuit block. At least a part of first drain terminal is included in a region sandwiched between first source terminal and second source terminal. Second drain terminal is disposed at a position deviating from an extension region that extends the region sandwiched between the first source terminal and the second source terminal beyond second source terminal as viewed from first drain terminal.

The present disclosure relates an integrated chip structure. The integrated chip structure includes a first chiplet predominantly having a first plurality of integrated chip devices coupled to a first plurality of interconnects over a first substrate. The first plurality of integrated chip devices are a first type of integrated chip device. The integrated chip structure further includes a second chiplet predominantly having a second plurality of integrated chip devices coupled to a second plurality of interconnects over a second substrate. The second plurality of integrated chip devices are a second type of integrated chip device different than the first type of integrated chip device. One or more inter-chiplet connectors are between the first and second chiplets and are configured to electrically couple the first and second chiplets. The first plurality of interconnects have a first minimum width different than a second minimum width of the second plurality of interconnects.

A data center rack is disclosed. The data center rack comprises a plurality of chamber openings including computing devices; and at least one chamber opening including a mounted ultracapacitor module comprising a plurality of ultracapacitors. A data center comprising a data center rack is also disclosed.

A power system includes a power module, an electronic load and a system board. The power module includes a first surface, a second surface, a switch and a plurality of conductive parts, wherein the switch is disposed on the first surface of the power module and the plurality of conductive parts are disposed on the second surface of the power module. The electronic load includes a plurality of conductive parts. The power module and the electronic load are disposed on two opposite sides of the system board, the power module delivers power to the electronic load through the system board, and gaps and networks of the plurality of conductive parts of the power module correspond to those of the plurality of conductive parts of the electronic load.

A semiconductor device includes first and second electrodes, a semiconductor part therebetween, and a control electrode between the semiconductor part and the first electrode. The semiconductor part includes first, third and fifth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer and the fifth layer are selectively provided between the first layer and the second electrode. In a method for controlling the semiconductor device, first to third voltages are applied in order to the control electrode while a p-n junction between the first and second layers is biased in a forward direction. The second and third voltages are greater than the first voltage, and the third voltage is less than the second voltage.

An electrical power converter with segmented windings is provided. Comprises a transformer or autotransformer including a magnetic core (3) and at least a primary winding (51) and at least a secondary winding (52) arranged around the magnetic core (3). The primary winding and/or the secondary winding have at least one full turn that includes at least one power switch (10) and at least one capacitor (12) connected in series and arranged respectively opposite each other and facing opposite sides of the magnetic core, defining a cell (4) that is divided in four segments, a first segment (23) including said at least one switch, a second opposite segment (24) including said at least one capacitor, and two other connecting segments (21, 22) providing electrical connection between the first segment and the second segment, and each of said two other connecting segments having opposite electrical polarity.

A DC-DC converter includes a first switching network that receives the input DC voltage and outputs a first AC voltage, a transformer, and a secondary side conversion circuit that receives the second AC voltage and outputs the output DC voltage. The transformer includes a first plurality of primary windings, a second plurality of primary windings and a plurality of secondary windings. The transformer is configured to receive the first AC voltage and outputting a second AC voltage. When the input DC voltage is intended to be used in a low voltage range, the first plurality of primary windings and the second plurality of primary windings are configured to be in parallel at the time the DC-DC converter is manufactured. When the input DC voltage is intended to be used in a high voltage range the first plurality of primary windings and the second plurality of primary windings are configured to be in series at the time of manufacture.

A semiconductor assembly includes a semiconductor package that includes first and second transistor dies embedded within a package body, the first and second transistor dies being arranged laterally side by side within the package body such that a first load terminal of the first transistor die faces an upper surface of the package body and such that a second load terminal of the second transistor die faces the upper surface of the package body, and a discrete capacitor mounted on the semiconductor package such that a first terminal of the discrete capacitor is directly over and electrically connected to the first load terminal of the first semiconductor die and such that a second terminal of the discrete capacitor is directly over and electrically connected with the second load terminal of the second semiconductor die.

The disclosure provides a power supply unit, including: a first high-frequency isolating converter including a first end connected to a first voltage, a second end and a third end; and a second high-frequency isolating converter including a first end connected to a second voltage, a second end and a third end, wherein the second end of the second high-frequency isolating converter and the second end of the first high-frequency isolating converter are connected in parallel to a first end of a first load, and the third end of the second high-frequency isolating converter and the third end of the first high-frequency isolating converter are connected in parallel to a second end of the first load. The disclosure further provides a loop power supply system having the power supply unit.