A temperature-compensated oscillator includes a resonator element, an oscillating circuit, and a temperature compensation circuit, and in a case of varying temperature in a temperature range of ±5° C. centered on a reference temperature in intervals of 6 minutes, and assuming observation period as τ, a wander performance fulfills a condition that an MTIE value is equal to or shorter than 6 ns in a range of 0 s<τ≦0.1 s, the MTIE value is equal to or shorter than 27 ns in a range of 0.1 s<τ≦1 s, the MTIE value is equal to or shorter than 250 ns in a range of 1 s<τ≦10 s, the MTIE value is equal to or shorter than 100 ns in a range of 10 s<τ≦1700 s, and the MTIE value is equal to or shorter than 6332 ns in a range of 100 s<τ≦1000 s.

A temperature-compensated oscillator includes a resonator element, an oscillating circuit, and a temperature compensation circuit, and in a case of varying temperature in a temperature range of ±5° C. centered on a reference temperature in intervals of 6 minutes, and assuming observation period as τ, a wander performance fulfills a condition that an MTIE value is equal to or shorter than 6 ns in a range of 0 s<τ≦0.1 s, the MTIE value is equal to or shorter than 27 ns in a range of 0.1 s<τ≦1 s, the MTIE value is equal to or shorter than 250 ns in a range of 1 s<τ≦10 s, the MTIE value is equal to or shorter than 100 ns in a range of 10 s<τ≦1700 s, and the MTIE value is equal to or shorter than 6332 ns in a range of 100 s<τ≦1000 s.

Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.

Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.

Accordingly the embodiments herein provide a method for fabricating a neuron oscillator (200a). The neuron oscillator (200a) includes a thermal insulating device connected with a resistor and a capacitor in series to produce self-sustained oscillations, where the resistor and the capacitor are arranged in parallel manner. The neuron oscillator (200a) eliminates a requirement of an additional compensation circuitry for a consistent performance over a time under heating issues. Additionally, an ON/OFF ratio of the neuron oscillator (200a) improves to a broader resistor range. Further, a presence of tunable synaptic memristor functionality of the neuron oscillator (200a) provides a reduced fabrication complexity to a large scale ONN. An input voltage required for the neuron oscillator (200a) is low (2-3 V) which makes it suitable to use with existing circuitries without using any additional converters. Additionally, an amplitude of the oscillations is a significant fraction of an applied bias which eliminates a need for an amplification.

Accordingly the embodiments herein provide a method for fabricating a neuron oscillator (200a). The neuron oscillator (200a) includes a thermal insulating device connected with a resistor and a capacitor in series to produce self-sustained oscillations, where the resistor and the capacitor are arranged in parallel manner. The neuron oscillator (200a) eliminates a requirement of an additional compensation circuitry for a consistent performance over a time under heating issues. Additionally, an ON/OFF ratio of the neuron oscillator (200a) improves to a broader resistor range. Further, a presence of tunable synaptic memristor functionality of the neuron oscillator (200a) provides a reduced fabrication complexity to a large scale ONN. An input voltage required for the neuron oscillator (200a) is low (2-3 V) which makes it suitable to use with existing circuitries without using any additional converters. Additionally, an amplitude of the oscillations is a significant fraction of an applied bias which eliminates a need for an amplification.

In an example, a system includes a BAW resonator. The system also includes a first heater configured to heat the BAW resonator, where the first heater is controlled by a first control loop. The system includes a circuit coupled to the BAW resonator. The system also includes a second heater configured to heat the circuit, where the second heater is controlled by a second control loop.

In an example, a system includes a BAW resonator. The system also includes a first heater configured to heat the BAW resonator, where the first heater is controlled by a first control loop. The system includes a circuit coupled to the BAW resonator. The system also includes a second heater configured to heat the circuit, where the second heater is controlled by a second control loop.

Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.

Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.