Power amplifiers with injection-locked oscillator are provided. In certain configurations, a packaged module includes a package substrate, a semiconductor die attached to the package substrate and having a power amplifier formed thereon, and an output matching network attached to the package substrate and operable to provide output impedance matching to an output of the power amplifier. The power amplifier includes two or more stages electrically coupled between the input and an output, and the two or more stages include an injection-locked oscillator stage that receives a radio frequency input signal and generates an injection-locked radio frequency signal.

Power amplifiers with injection-locked oscillator are provided. In certain configurations, a packaged module includes a package substrate, a semiconductor die attached to the package substrate and having a power amplifier formed thereon, and an output matching network attached to the package substrate and operable to provide output impedance matching to an output of the power amplifier. The power amplifier includes two or more stages electrically coupled between the input and an output, and the two or more stages include an injection-locked oscillator stage that receives a radio frequency input signal and generates an injection-locked radio frequency signal.

A high-frequency oscillator includes an electric resonant circuit, and a high-frequency welding system and a method for controlling the frequency uses a high-frequency oscillator, in particular in a high-frequency welding system. The electric resonant circuit includes at least one electronic component having an inductance and at least one capacitor having a capacitance. At least one additional magnetic coil is associated with the electronic component and can electronically influence the inductance of the electronic component.

A high-frequency oscillator includes an electric resonant circuit, and a high-frequency welding system and a method for controlling the frequency uses a high-frequency oscillator, in particular in a high-frequency welding system. The electric resonant circuit includes at least one electronic component having an inductance and at least one capacitor having a capacitance. At least one additional magnetic coil is associated with the electronic component and can electronically influence the inductance of the electronic component.

Systems and methods for compensating a non-linearity of a digitally controlled oscillator (DCO) are presented. Data comprising a plurality of silicon measurements is received. Each silicon measurement in the plurality of silicon measurements is compared to an ideal value. Based on the comparing, a plurality of compensation vectors is generated. Each compensation vector comprises at least one silicon measurement. At least one frequency is adjusted based on a compensation vector in the plurality of compensation vectors. A digitally-controlled oscillator frequency is generated based on the adjusted at least one frequency.

Systems and methods for compensating a non-linearity of a digitally controlled oscillator (DCO) are presented. Data comprising a plurality of silicon measurements is received. Each silicon measurement in the plurality of silicon measurements is compared to an ideal value. Based on the comparing, a plurality of compensation vectors is generated. Each compensation vector comprises at least one silicon measurement. At least one frequency is adjusted based on a compensation vector in the plurality of compensation vectors. A digitally-controlled oscillator frequency is generated based on the adjusted at least one frequency.

A high-frequency oscillator includes an electric resonant circuit, and a high-frequency welding system and a method for controlling the frequency uses a high-frequency oscillator, in particular in a high-frequency welding system. The electric resonant circuit includes at least one electronic component having an inductance and at least one capacitor having a capacitance. At least one additional magnetic coil is associated with the electronic component and can electronically influence the inductance of the electronic component.

An oscillator includes a first output node and a second output node. There is a tank circuit coupled between the first output node and the second output node. There is a first transistor having a first node, a second node coupled to a current source, and a control node coupled to the second output node. There is a second transistor having a first node, a second node coupled to the current source, and a control node coupled to the first output node. There is a first inductor coupled in series between the first node of the first transistor and the first output node. There is a second inductor coupled in series between the first node of the second transistor and the second output node.

An oscillator includes a first output node and a second output node. There is a tank circuit coupled between the first output node and the second output node. There is a first transistor having a first node, a second node coupled to a current source, and a control node coupled to the second output node. There is a second transistor having a first node, a second node coupled to the current source, and a control node coupled to the first output node. There is a first inductor coupled in series between the first node of the first transistor and the first output node. There is a second inductor coupled in series between the first node of the second transistor and the second output node.

A capacitor bank has a capacitance value that is discontinuous and has an extremely narrow variable range. Thus, in a case of obtaining a wide variable range of the capacitance value, a large number of capacitors are connected in parallel and used while being switched by switches. The present technology achieves at least one of: allowing the capacitance value of a variable capacitance circuit to be varied continuously by electrical control without increasing the parasitic capacitance; and decreasing the current consumption of an oscillator circuit using the variable capacitance circuit as compared to a conventional case. The variable capacitance circuit includes: a transconductance circuit that includes a MOS transistor; an inductor that is connected in parallel to the transconductance circuit; and a Gm control circuit that varies a transconductance of the MOS transistor.