A semiconductor device according to the present embodiment includes a plurality of switching elements and a plurality of variable capacitance elements. The switching elements are switching elements connected in series between a first control terminal and a second control terminal and plural types of capacitance control signals can be supplied to the first control terminal and the second control terminal. The variable capacitance elements have capacitance control terminals connected to corresponding one ends of the switching elements, respectively.

A digitally implemented radio frequency sensor for physiology sensing may be configured to generate oscillation signals for emitting radio frequency pulses for range gated sensing. The sensor may include a radio frequency transmitter configured to emit the pulses and a receiver configured to receive reflected ones of the emitted radio frequency pulses under control of a microcontroller. The received pulses may be processed by the microcontroller to detect physiology characteristics such as motion, sleep, respiration and/or heartbeat. The microcontroller may be configured to generate timing pulses such as with a pulse generator for transmission of radio frequency sensing pulses. The microprocessor may sample received signals, such as in phase and quadrature phase analogue signals, to implement digital demodulation and baseband filtering of the received signals.

An LC resonance element (10) includes a dielectric film (12), a common electrode (11) formed of a thin-film conductor on a lower surface (12D) of the dielectric film, a first capacitor (C1) and a second capacitor (C2) that are connected in series via the common electrode (11) and constitute a thin-film capacitor (TC), first and second external connection terminals (14A, 14B) formed on an upper surface (12U) of the dielectric film, a thin-film conductive wire (16) constituting a thin-film inductor (TL), a first upper electrode (13A) of the first capacitor formed on the upper surface (12U), and a second upper electrode (13B) of the second capacitor formed on the upper surface (12U). The thin-film conductive wire (16) is formed in a region (R2) located on the upper surface (12U) of the dielectric film and outside the common electrode (11) in plan view.

A phased locked loop (PLL) having a filter output voltage that is limited to a fraction of the voltage range accepted by the tuning port of a voltage-controlled oscillator (VCO) under control and a control system responsive to the filter output voltage and for summing the filter output voltage with an elevator voltage and applying the summed voltage to the VCO tuning port.

A semiconductor device according to the present embodiment includes a plurality of switching elements and a plurality of variable capacitance elements. The switching elements are switching elements connected in series between a first control terminal and a second control terminal and plural types of capacitance control signals can be supplied to the first control terminal and the second control terminal. The variable capacitance elements have capacitance control terminals connected to corresponding one ends of the switching elements, respectively.

We have developed a high-performance, low-volume, low-weight, and low-power sensor based on a self-sustaining oscillator. The techniques described here may be used for sensing various fields; we demonstrate magnetic sensing. The oscillator is based on a dielectric resonator that contains paramagnetic defects and is connected to a sustaining amplifier in a feedback loop. The resonance frequency of the dielectric resonator shifts in response to changes in the magnetic field, resulting in a shift in the frequency of the self-sustaining oscillator. The value of the magnetic field is thereby encoded in the shift or modulation output of the self-sustaining oscillator. The sensor as demonstrated uses no optics, no input microwaves, and, not including digitization electronics, consumes less than 300 mW of power and exhibits a sensitivity at or below tens of pT/√{square root over (Hz)}. In some implementations, the sensor is less than 1 mL in volume.

We have developed a high-performance, low-volume, low-weight, and low-power sensor based on a self-sustaining oscillator. The techniques described here may be used for sensing various fields; we demonstrate magnetic sensing. The oscillator is based on a dielectric resonator that contains paramagnetic defects and is connected to a sustaining amplifier in a feedback loop. The resonance frequency of the dielectric resonator shifts in response to changes in the magnetic field, resulting in a shift in the frequency of the self-sustaining oscillator. The value of the magnetic field is thereby encoded in the shift or modulation output of the self-sustaining oscillator. The sensor as demonstrated uses no optics, no input microwaves, and, not including digitization electronics, consumes less than 300 mW of power and exhibits a sensitivity at or below tens of pT/√{square root over (Hz)}. In some implementations, the sensor is less than 1 mL in volume.

A high frequency yttrium iron garnet oscillator is described that comprises a coplanar yttrium iron garnet resonator. The coplanar yttrium iron garnet resonator has an yttrium iron garnet sphere, a coplanar coupling structure and a coplanar waveguide. The coplanar coupling structure is integrated with the coplanar waveguide. The coplanar coupling structure is coupled to the yttrium iron garnet sphere. Further, a method of manufacturing a high frequency yttrium iron garnet oscillator is described.

Semiconductor devices and methods relating to the semiconductor devices are provided. A semiconductor device includes a resonant clock circuit. The semiconductor device further includes an inductor. The semiconductor device also includes a magnetic layer formed of a magnetic material disposed in between a portion of the resonant clock circuit and the inductor. Clock signals of the resonant clock circuit are utilized by the magnetic layer.

Articles including oscillating units and methods for producing the same are disclosed. An example article includes one or more oscillator units, where each oscillator unit comprises: a micro strip transmission line extending from a first end to a second end. A first termination impedance is coupled to the first end and a second termination impedance is coupled to the second end. A first transistor is coupled between the first end and the midpoint; and a second transistor is coupled between the midpoint and the second end. The micro strip transmission line has a midpoint between the first end and the second end; and each oscillator unit generates a standing wave having a predetermined wavelength in the micro strip transmission line.