A first capacitor has a capacitance adjustable to a set point value by application of a bias voltage. A second capacitor also has a capacitance adjustable to a set point value by application of a bias voltage. The first and second capacitors are arranged to receive the same bias voltage generated by a control circuit. The control circuit receiving the set point value as an input and generates that bias voltage in response to a quantity representative of a capacitance of the second capacitor.

A first capacitor has a capacitance adjustable to a set point value by application of a bias voltage. A second capacitor also has a capacitance adjustable to a set point value by application of a bias voltage. The first and second capacitors are arranged to receive the same bias voltage generated by a control circuit. The control circuit receiving the set point value as an input and generates that bias voltage in response to a quantity representative of a capacitance of the second capacitor.

A method and apparatus for shifting a display driving frequency to avoid a noise of an electronic sensor module is provided. The method for operating of an electronic device includes detecting a driving frequency of a divider in an operating module of the electronic device, determining whether an offset exists in the detected driving frequency, and controlling an oscillation frequency of an oscillator in the operating module.

A method and apparatus for shifting a display driving frequency to avoid a noise of an electronic sensor module is provided. The method for operating of an electronic device includes detecting a driving frequency of a divider in an operating module of the electronic device, determining whether an offset exists in the detected driving frequency, and controlling an oscillation frequency of an oscillator in the operating module.

Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.

Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.

An oscillator circuit includes an amplifying unit and a first feedback resistor. The amplifying unit includes an inverter at an input stage being connected to the one end of a crystal resonator, an inverter at an output stage being connected to the other end of the crystal resonator, and a linear amplifier. The linear amplifier is connected between an output terminal of the inverter at the input stage and an input terminal of the inverter at the output stage. The linear amplifier includes at least one inverter and a second feedback resistor. The second feedback resistor is connected in parallel to the at least one inverter. The linear amplifier has a conductance with a magnitude larger than a conductance of the inverter at the input stage and equal to or less than a conductance of the inverter at the output stage.

An oscillator circuit includes an amplifying unit and a first feedback resistor. The amplifying unit includes an inverter at an input stage being connected to the one end of a crystal resonator, an inverter at an output stage being connected to the other end of the crystal resonator, and a linear amplifier. The linear amplifier is connected between an output terminal of the inverter at the input stage and an input terminal of the inverter at the output stage. The linear amplifier includes at least one inverter and a second feedback resistor. The second feedback resistor is connected in parallel to the at least one inverter. The linear amplifier has a conductance with a magnitude larger than a conductance of the inverter at the input stage and equal to or less than a conductance of the inverter at the output stage.

Accordingly the embodiments herein provide a method for fabricating a neuron oscillator (200a). The neuron oscillator (200a) includes a thermal insulating device connected with a resistor and a capacitor in series to produce self-sustained oscillations, where the resistor and the capacitor are arranged in parallel manner. The neuron oscillator (200a) eliminates a requirement of an additional compensation circuitry for a consistent performance over a time under heating issues. Additionally, an ON/OFF ratio of the neuron oscillator (200a) improves to a broader resistor range. Further, a presence of tunable synaptic memristor functionality of the neuron oscillator (200a) provides a reduced fabrication complexity to a large scale ONN. An input voltage required for the neuron oscillator (200a) is low (2-3 V) which makes it suitable to use with existing circuitries without using any additional converters. Additionally, an amplitude of the oscillations is a significant fraction of an applied bias which eliminates a need for an amplification.

Accordingly the embodiments herein provide a method for fabricating a neuron oscillator (200a). The neuron oscillator (200a) includes a thermal insulating device connected with a resistor and a capacitor in series to produce self-sustained oscillations, where the resistor and the capacitor are arranged in parallel manner. The neuron oscillator (200a) eliminates a requirement of an additional compensation circuitry for a consistent performance over a time under heating issues. Additionally, an ON/OFF ratio of the neuron oscillator (200a) improves to a broader resistor range. Further, a presence of tunable synaptic memristor functionality of the neuron oscillator (200a) provides a reduced fabrication complexity to a large scale ONN. An input voltage required for the neuron oscillator (200a) is low (2-3 V) which makes it suitable to use with existing circuitries without using any additional converters. Additionally, an amplitude of the oscillations is a significant fraction of an applied bias which eliminates a need for an amplification.