A method for determining characteristic parameters of an electrostatic actuation oscillator, where the method includes generating a first excitation voltage defined as being the sum of a first sinusoidal voltage and a voltage pulse; applying the first excitation voltage at the input of the oscillator; acquiring in the time domain a first response voltage present at the output of the oscillator when the first excitation voltage is applied at the input of the oscillator; obtaining, by transformation in the frequency domain, a first amplitude spectral density of the first response voltage; determining the characteristic parameters of the oscillator from the first amplitude spectral density.

A method for determining characteristic parameters of an electrostatic actuation oscillator, where the method includes generating a first excitation voltage defined as being the sum of a first sinusoidal voltage and a voltage pulse; applying the first excitation voltage at the input of the oscillator; acquiring in the time domain a first response voltage present at the output of the oscillator when the first excitation voltage is applied at the input of the oscillator; obtaining, by transformation in the frequency domain, a first amplitude spectral density of the first response voltage; determining the characteristic parameters of the oscillator from the first amplitude spectral density.

A transconductance controlling circuit is provided. The transconductance controlling circuit includes a resonance circuit, a negative-resistance unit-circuit and a transconductance boosting circuit. The resonance circuit generates an oscillation signal. The negative-resistance unit-circuit is coupled to a resonance circuit and includes a first transistor and a second transistor. The transconductance boosting circuit is coupled to the negative-resistance unit-circuit and includes a third transistor and a fourth transistor. A first drain of the first transistor is coupled to a third drain of the third transistor, a first gate of the first transistor is coupled to a third gate of the third transistor, the first gate of the first transistor is coupled to a second drain of the second transistor, and a first base of the first transistor is coupled to a fourth base of the fourth transistor and to a fourth source of the fourth transistor.

A transconductance controlling circuit is provided. The transconductance controlling circuit includes a resonance circuit, a negative-resistance unit-circuit and a transconductance boosting circuit. The resonance circuit generates an oscillation signal. The negative-resistance unit-circuit is coupled to a resonance circuit and includes a first transistor and a second transistor. The transconductance boosting circuit is coupled to the negative-resistance unit-circuit and includes a third transistor and a fourth transistor. A first drain of the first transistor is coupled to a third drain of the third transistor, a first gate of the first transistor is coupled to a third gate of the third transistor, the first gate of the first transistor is coupled to a second drain of the second transistor, and a first base of the first transistor is coupled to a fourth base of the fourth transistor and to a fourth source of the fourth transistor.

Systems and processes disclosed herein determine the temperature of a crystal, such as a crystal that may be used in a crystal oscillator, using the reference crystal itself. The system can measure the temperature of the crystal without a temperature sensor. Further, a single oven technique may be used to maintain the temperature of the reference crystal. Thus, in certain embodiments, a more compact crystal oscillator can be generated compared to conventional techniques. Further, by measuring the reference crystal based on signals generated by the reference crystal itself, the system disclosed herein is more accurate than many previous crystal oscillator systems.

Systems and processes disclosed herein determine the temperature of a crystal, such as a crystal that may be used in a crystal oscillator, using the reference crystal itself. The system can measure the temperature of the crystal without a temperature sensor. Further, a single oven technique may be used to maintain the temperature of the reference crystal. Thus, in certain embodiments, a more compact crystal oscillator can be generated compared to conventional techniques. Further, by measuring the reference crystal based on signals generated by the reference crystal itself, the system disclosed herein is more accurate than many previous crystal oscillator systems.

A transconductance controlling circuit is provided. The transconductance controlling circuit includes a resonance circuit, a negative-resistance unit-circuit and a transconductance boosting circuit. The resonance circuit generates an oscillation signal. The negative-resistance unit-circuit is coupled to a resonance circuit and includes a first transistor and a second transistor. The transconductance boosting circuit is coupled to the negative-resistance unit-circuit and includes a third transistor and a fourth transistor. A first drain of the first transistor is coupled to a third drain of the third transistor, a first gate of the first transistor is coupled to a third gate of the third transistor, the first gate of the first transistor is coupled to a second drain of the second transistor, and a first base of the first transistor is coupled to a fourth base of the fourth transistor and to a fourth source of the fourth transistor.

A transconductance controlling circuit is provided. The transconductance controlling circuit includes a resonance circuit, a negative-resistance unit-circuit and a transconductance boosting circuit. The resonance circuit generates an oscillation signal. The negative-resistance unit-circuit is coupled to a resonance circuit and includes a first transistor and a second transistor. The transconductance boosting circuit is coupled to the negative-resistance unit-circuit and includes a third transistor and a fourth transistor. A first drain of the first transistor is coupled to a third drain of the third transistor, a first gate of the first transistor is coupled to a third gate of the third transistor, the first gate of the first transistor is coupled to a second drain of the second transistor, and a first base of the first transistor is coupled to a fourth base of the fourth transistor and to a fourth source of the fourth transistor.

A semiconductor device includes an electronic component that includes an oscillator and has terminals on one face. A semiconductor chip is electrically connected to the electronic component and also includes terminals on one face thereof. The electronic component and the semiconductor chip are mounted to a mounting base such that the terminals of the electronic component and the terminals of the semiconductor chip face in the same direction. First bonding wires are connected to the terminals of the semiconductor chip, and second bonding wires having an apex height smaller than that of the first bonding wires connect the terminals of the electronic component to the terminals of the semiconductor chip. A sealing member completely seals within at least the electronic component.

A semiconductor device includes an electronic component that includes an oscillator and has terminals on one face. A semiconductor chip is electrically connected to the electronic component and also includes terminals on one face thereof. The electronic component and the semiconductor chip are mounted to a mounting base such that the terminals of the electronic component and the terminals of the semiconductor chip face in the same direction. First bonding wires are connected to the terminals of the semiconductor chip, and second bonding wires having an apex height smaller than that of the first bonding wires connect the terminals of the electronic component to the terminals of the semiconductor chip. A sealing member completely seals within at least the electronic component.