In an integrated circuit device having a microelectromechanical-system (MEMS) resonator and a temperature transducer, a clock signal is generated by sensing resonant mechanical motion of the MEMS resonator and a temperature signal indicative of temperature of the MEMS resonator is generated via the temperature transducer. The clock signal and the temperature signal are output from the integrated circuit device concurrently.

In an integrated circuit device having a microelectromechanical-system (MEMS) resonator and a temperature transducer, a clock signal is generated by sensing resonant mechanical motion of the MEMS resonator and a temperature signal indicative of temperature of the MEMS resonator is generated via the temperature transducer. The clock signal and the temperature signal are output from the integrated circuit device concurrently.

A resonator device includes: a base having a first surface and a second surface that are in front-back relation; a resonator element that is located at a first surface with respect to the base and that includes a resonation substrate and an electrode disposed at a surface of the resonation substrate on a base side; a conductive layer that is disposed at the first surface and that includes a joint portion joined to the electrode; and a stress relaxation layer that is interposed between the base and the conductive layer and that at least partially overlaps with the joint portion in a plan view of the base. The stress relaxation layer includes an exposed portion exposed from the conductive layer.

A resonator device includes: a base having a first surface and a second surface that are in front-back relation; a resonator element that is located at a first surface with respect to the base and that includes a resonation substrate and an electrode disposed at a surface of the resonation substrate on a base side; a conductive layer that is disposed at the first surface and that includes a joint portion joined to the electrode; and a stress relaxation layer that is interposed between the base and the conductive layer and that at least partially overlaps with the joint portion in a plan view of the base. The stress relaxation layer includes an exposed portion exposed from the conductive layer.

An apparatus and method for building and operating of a YIG-based filter-attenuator module with closed-loop control. The module combines both signal filtering and amplitude control functions by utilizing an yttrium-iron-garnet (YIG) resonator. A technique for a closed-loop calibration and control also disclosed. This apparatus and method provides a cost effective harmonic rejection/amplitude control solution for microwave test-and-measurement instruments such as signal generators and spectrum analyzers.

An apparatus and method for building and operating of a YIG-based filter-attenuator module with closed-loop control. The module combines both signal filtering and amplitude control functions by utilizing an yttrium-iron-garnet (YIG) resonator. A technique for a closed-loop calibration and control also disclosed. This apparatus and method provides a cost effective harmonic rejection/amplitude control solution for microwave test-and-measurement instruments such as signal generators and spectrum analyzers.

One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate—in effect, heating the MEMS component and optionally related circuitry to a steady-state “oven” temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate—in effect, heating the MEMS component and optionally related circuitry to a steady-state “oven” temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

An apparatus comprises a mechanical resonator-based oscillator module generating a local oscillator signal with a frequency of more than 700 MHz. Further, the apparatus comprises a digital-to-time converter module generating a frequency adapted signal based on the local oscillator signal.

An apparatus comprises a mechanical resonator-based oscillator module generating a local oscillator signal with a frequency of more than 700 MHz. Further, the apparatus comprises a digital-to-time converter module generating a frequency adapted signal based on the local oscillator signal.