Patent classifications
H03B9/12
Apparatus and methods for power amplifiers with an injection-locked oscillator driver stage
Apparatus and methods for power amplifiers with an injection-locked oscillator driver stage are provided herein. In certain configurations, a multi-mode power amplifier includes a driver stage implemented using an injection-locked oscillator and an output stage having an adjustable supply voltage that changes based on a mode of the multi-mode power amplifier. By implementing the multi-mode power amplifier in this manner, the multi-mode power amplifier exhibits excellent efficiency, including when the voltage level of the adjustable supply voltage is relatively low.
Apparatus and methods for power amplifiers with an injection-locked oscillator driver stage
Apparatus and methods for power amplifiers with an injection-locked oscillator driver stage are provided herein. In certain configurations, a multi-mode power amplifier includes a driver stage implemented using an injection-locked oscillator and an output stage having an adjustable supply voltage that changes based on a mode of the multi-mode power amplifier. By implementing the multi-mode power amplifier in this manner, the multi-mode power amplifier exhibits excellent efficiency, including when the voltage level of the adjustable supply voltage is relatively low.
ELEMENT
An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency f.sub.LC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.
ELEMENT
An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency f.sub.LC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.
Element that oscillates or detects terahertz waves
An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency f.sub.LC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.
Element that oscillates or detects terahertz waves
An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency f.sub.LC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.