The present invention relates to using spin transfer torque underneath a nanocontact on a magnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation of dissipative magnetic droplet solitons and report on their rich dynamical properties. Micromagnetic simulations identify a wide range of automodulation frequencies including droplet oscillatory motion, droplet spinning, and droplet breather states. The droplet can be controlled using both current and magnetic fields, and is expected to have applications in spintronics, magnonics, and PMA-based domain-wall devices.

A spin modulator with phase tuning means which comprises, a spin array which consists of mn matrix spin-transfer torque oscillators, a selection control means which selectively operates the spin-transfer torque oscillators according to an operation condition of the spin array, and a phase tuning array which includes mn matrix phase tuning means, wherein the mn matrix phase tuning means tune a phase synchronization operation of the spin-transfer torque oscillators according to the operation condition.

A spin torque oscillator (STO) device includes a main pole, a trailing shield, an STO stack disposed between the main pole and the trailing shield, a passivation layer disposed on a sidewall of the STO stack, and a dielectric layer disposed on the passivation layer. The passivation layer is non-magnetic and includes one or more layers that is selected from the group consisting of a B-containing layer, a C-containing layer, and a Ge-containing layer.

A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the first ferromagnetic metal layer, wherein the wiring includes a pure spin current generator which is bonded to the metal layer, and a low-resistance portion which is connected to both ends of the generator in the second direction and is formed of a material having a smaller electrical resistivity than the generator, and the generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.

A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.