A spin torque oscillation generator includes a spin reference layer and a spin oscillation layer. The spin reference layer has a first magnetization direction. The spin reference layer is configured to receive a current and generate a spin-polarized current. The spin oscillation layer has a second magnetization direction. The second magnetization direction is different than the first magnetization direction. The spin oscillation layer is configured to receive the spin-polarized current from the spin reference layer. The spin-polarized current generates a spin torque based on the second magnetization direction of the spin oscillation layer. The spin torque generates a spin torque output signal.

A nano-oscillator magnetic wave propagation system has a group of aggregated spin-torque nano-oscillators (ASTNOs), which share a magnetic propagation material. Each of the group of ASTNOs is disposed about an emanating point in the magnetic propagation material. During a non-wave propagation state of the nano-oscillator magnetic wave propagation system, the magnetic propagation material receives a polarizing magnetic field. During a wave propagation state of the nano-oscillator magnetic wave propagation system, each of the group of ASTNOs initiates spin waves through the magnetic propagation material, such that a portion of the spin waves initiated from each of the group of ASTNOs combine to produce an aggregation of spin waves emanating from the emanating point. The aggregation of spin waves may provide a sharper wave front than wave fronts of the individual spin waves initiated from each of the group of ASTNOs.

A spin torque oscillator and a method of making same. The spin torque oscillator is configured to generate microwave electrical oscillations without the use of a magnetic field external thereto, the spin torque oscillator having one of a plurality of input nanopillars and a nanopillar having a plurality of free FM layers.

According to one embodiment, an oscillator includes first to third conductive bodies, a first stacked unit, and a magnetic unit. The first conductive body includes first, second region, and third regions. The second conductive body includes a portion separated from the third region. The first stacked unit is provided between the third region and the portion. The first stacked unit includes first to fourth magnetic layers, and first to third intermediate layers. At least a portion of the magnetic unit and at least a portion of the first stacked unit overlap each other. In a first state, the first to fourth magnetizations are aligned with a third direction perpendicular to the first direction and the second direction. The second magnetization has a component in a reverse orientation of the first magnetization. The fourth magnetization has a component in a reverse orientation of the third magnetization.

Apparatus for generating spin waves comprising a body (102) of magnetic material and an elastic wave generator (120), wherein the body (102) has a surface (108) and the elastic wave generator (120) is arranged to transmit elastic waves so that they propagate through the body (102) towards the surface (108) and are reflected at the surface to form a standing elastic wave in the body (102), thereby generating spin waves.

A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density J.sub.O for oscillation, to a magnetoresistive effect element for a time T.sub.P, and then executes a second step of applying a current, which has a second current density J.sub.S smaller than the first current density and not smaller than the critical current density J.sub.O for oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time T.sub.P in the first step is J.sub.P, a critical current density for magnetization reversal of the magnetoresistive effect element is J.sub.R, and a magnetization reversal time of the magnetoresistive effect element is T.sub.R: $\begin{array}{cc}\frac{0.1\times T_R\left(J_R-J_O\right)}{J_p-J_S}<T_p<0.9\times T_R\frac{J_R-J_O}{J_S-J_O}& \end{array}$

A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.

A spin torque oscillator includes a first electrode, a second electrode and a device layer stack located between the first electrode and the second electrode. The device layer stack includes a spin polarization layer including a first ferromagnetic material, an assist layer including a third ferromagnetic material, a ferromagnetic oscillation layer including a second ferromagnetic material located between the spin polarization layer and the assist layer, a nonmagnetic spacer layer located between the spin polarization layer and the ferromagnetic oscillation, and a nonmagnetic coupling layer located between the ferromagnetic oscillation layer and the assist layer. The assist layer is antiferromagnetically coupled to the ferromagnetic oscillation layer through the non-magnetic coupling layer, and the assist layer has a magnetization that is coupled to a magnetization of the ferromagnetic oscillation layer.

A spin torque oscillator includes a first electrode, a second electrode and a device layer stack located between the first electrode and the second electrode. The device layer stack includes a spin polarization layer including a first ferromagnetic material, an assist layer including a third ferromagnetic material, a ferromagnetic oscillation layer including a second ferromagnetic material located between the spin polarization layer and the assist layer, a nonmagnetic spacer layer located between the spin polarization layer and the ferromagnetic oscillation, and a nonmagnetic coupling layer located between the ferromagnetic oscillation layer and the assist layer. The assist layer is antiferromagnetically coupled to the ferromagnetic oscillation layer through the non-magnetic coupling layer, and the assist layer has a magnetization that is coupled to a magnetization of the ferromagnetic oscillation layer.

According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer comprising an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy.