According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer comprising an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy.

A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.

A magnetic device for magnetic random access memory (MRAM), spin torque MRAM, or spin torque oscillator technology is disclosed wherein a magnetic tunnel junction (MTJ) with a sidewall is formed between a bottom electrode and a top electrode. A passivation layer that is a single layer or multilayer comprising one of B, C, or Ge, or an alloy thereof wherein the B, C, and Ge content, respectively, is at least 10 atomic % is formed on the MTJ sidewall to protect the MTJ from reactive species during subsequent processing including deposition of a dielectric layer that electrically isolates the MTJ from adjacent MTJs, and during annealing steps around 400° C. in CMOS fabrication. The single layer is about 3 to 10 Angstroms thick and may be an oxide or nitride of B, C, or Ge. The passivation layer is preferably amorphous to prevent diffusion of reactive oxygen or nitrogen species.

An oscillator comprising, a cavity wherein the cavity comprises an electrical conductor. The oscillator comprising an electrical insulator disposed on a surface of the cavity; and a heterostructure disposed on a surface of the electrical insulator and having a first end and a second end, the heterostructure comprising one or more spin current source layers and one or more magnetic material layers. In response to an electrical current passed through the spin current source, an oscillation occurs in a plurality of magnetic domains of the magnetic material, wherein the oscillations have substantially the same phase.

Apparatus for generating spin waves comprising a body (102) of magnetic material and an elastic wave generator (120), wherein the body (102) has a surface (108) and the elastic wave generator (120) is arranged to transmit elastic waves so that they propagate through the body (102) towards the surface (108) and are reflected at the surface to form a standing elastic wave in the body (102), thereby generating spin waves.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

A frequency sensor is provided. The frequency sensor may include: a magnetoresistive nano-oscillator including a magnetic heterostructure of at least a magnetic free layer, a magnetic reference layer and a non-magnetic intermediate layer arranged between the magnetic free layer and the magnetic reference layer; a coupling arrangement for coupling an incoming signal to at least one magnetic mode of the magnetic free layer, and a frequency estimator. The frequency estimator may be configured to: perform a plurality of voltage measurements across the magnetoresistive nano-oscillator over time; calculate a time averaged voltage across the magnetoresistive nano-oscillator based on the plurality of voltage measurements; estimate, over a finite range of frequencies, a frequency of the incoming signal based on the calculated time averaged voltage, and output a signal representative of the estimated frequency. A method of estimating a frequency of an incoming signal is also provided.

A memory device includes a plurality of layers forming a stack. The plurality of layers include a spin polarization layer having a magnetic anisotropy approximately perpendicular to a plane of the spin polarization layer, an antiferromagnetic layer having an antiferromagnetic material, a ferromagnetic layer that is exchange coupled to the antiferromagnetic layer, where the antiferromagnetic layer is between the ferromagnetic layer and the spin polarization layer, and a storage layer having a magnetization direction that indicates a memory state of the storage layer. The memory state is switched by an amount of current through the stack. The spin polarization layer, the ferromagnetic layer, and the antiferromagnetic layer are configured to reduce the amount of current through the stack for switching the magnetization direction of the storage layer relative to an amount of current through a memory device without the spin polarization layer, the ferromagnetic layer, and the antiferromagnetic layer.