A transmitter/receiver (1) up-converts, using an LO signal as a local oscillation signal, an IF signal having a predetermined frequency band, thereby generating a transmission signal RF.sub.TX. Moreover, the transmitter/receiver (1) generates a (LO+IF).sup.2 signal and a (LO−IF).sup.2 signal based on the IF signal and the LO signal. Using the LO signal obtained by adding-up of the (LO+IF).sup.2 signal and the (LO−IF).sup.2 signal, a reception signal RF.sub.RX is down-converted. Thus, a local oscillation signal generation unit of a receiving unit is not necessary.

A transmitter/receiver (1) up-converts, using an LO signal as a local oscillation signal, an IF signal having a predetermined frequency band, thereby generating a transmission signal RF.sub.TX. Moreover, the transmitter/receiver (1) generates a (LO+IF).sup.2 signal and a (LO−IF).sup.2 signal based on the IF signal and the LO signal. Using the LO signal obtained by adding-up of the (LO+IF).sup.2 signal and the (LO−IF).sup.2 signal, a reception signal RF.sub.RX is down-converted. Thus, a local oscillation signal generation unit of a receiving unit is not necessary.

A mixer includes a load portion connected between an input terminal of a first power voltage and an output terminal of the radio frequency transmit signal and configured to adjust a magnitude of the radio frequency transmit signal, a first switching unit connected to an output terminal of the radio frequency transmit signal, and configured to perform a first switching operation in response to a plurality of local oscillation signals, and a second switching unit connected between the first switching unit and an input terminal of a second power voltage, lower than the first power voltage, and configured to perform a second switching operation in response to a plurality of baseband signals, the plurality of local oscillation signals include an I+ baseband signal, an I− baseband signal, a Q+ baseband signal, and a Q− baseband signal, and the second switching unit includes a first branch performing a switching operation under control of the I+ baseband signal and the Q+ baseband signal, a second branch performing a switching operation under control of the I− baseband signal and the Q− baseband signal, a third branch performing a switching operation under control of the Q+ baseband signal and the I− baseband signal, and a fourth branch performing a switching operation under control of the Q− baseband signal and the I+ baseband signal.

Radio frequency (RF) mixer circuits having a complementary frequency multiplier module that requires no balun to multiply a lower frequency base oscillator signal to a higher frequency local oscillator (LO) signal, and which has a significantly reduced IC area compared to balun-based frequency multipliers. In one embodiment, the complementary frequency multiplier module includes a complementary pair of FETs controlled by an applied base oscillator signal. The complementary FETs are coupled to a common-gate FET amplifier and alternate becoming conductive in response to the base oscillator signal. The alternating switching of the complementary FETs in response to the opposing phases of the base oscillator signal cause the common-gate FET amplifier to output a higher frequency local oscillator (LO) signal. The LO signal is coupled to the LO input of a mixer or mixer core of a type suitable for use in conjunction with a frequency multiplier.

A mobile terminal including an up-converter converting a baseband (BB) signal into a radio frequency (RF) signal and a controller controlling a voltage applied to the up-converter is provided. The up-converter includes a first transistor and a second transistor each having a gate to which a baseband voltage is applied, a third transistor having a drain connected in parallel to a drain of the first transistor, and a fourth transistor having a drain connected in parallel to a drain of the second transistor, and the up-converter and the mobile terminal with improved phase linearity characteristics may be provided.

A source injection mixer includes an FET, an IF matching circuit between an IF port and a gate of the FET, and that matches impedance of the IF port and impedance of the gate as viewed from the IF port, a shorting stub of which one end is connected to a source of the FET and another end is grounded, and shorter than ¼ of an electric length at a frequency of LO signals, an LO matching circuit between an LO port and the source of the FET, and that matches impedance of the LO port and impedance of the source as viewed from the LO port, and an RF matching circuit between an RF port and a drain of the FET, and that matches impedance of the RF port and impedance of the drain as viewed from the RF port.

The present invention is to provide a mixing circuit, comprising: a first transistor; a second transistor; a third transistor; a first connection point connected to a gate terminal of the first transistor, a drain terminal of the second transistor and a source terminal of the third transistor; a second connection point connected to a source terminal of the first transistor and a gate terminal of the second transistor; and a third connection point connected to a drain terminal of the first transistor and a drain terminal of the third transistor.

A detector circuit includes: a squaring circuit configured to receive an output of a power amplifier of a radio transmitter and to produce an output current, the output of the power amplifier including: a desired tone; a local oscillator leakage tone; and an image tone, and the output current of the squaring circuit including: a direct current (DC) component including a function of the desired tone and an alternating current (AC) component; and a DC current absorber electrically connected to an output terminal of the squaring circuit, the DC current absorber being configured to filter out the DC component of the output current of the squaring circuit to produce a filtered output of the squaring circuit, the filtered output including the AC component including functions of the local oscillator leakage tone and the image tone.

A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.