A direct current (DC) offset protection circuit includes: a DC offset detection circuit and a control circuit. The DC offset detection circuit is arranged to detect whether a DC component exists in pulse-width-modulation (PWM) signals and accordingly generate a DC offset detection result. The control circuit is arranged to control an audio system according to the DC offset detection result. The DC offset detection circuit comprises a PWM polarity judgment circuit, a cascaded integrator-comb (CIC) filter and a DC offset judgment circuit. The PWM polarity judgment circuit is arranged to judge a polarity of complementary PWM signals and accordingly generate a polarity indication value. The CIC filter is arranged to generate a filter output signal by averaging a plurality of polarity indication values. The DC offset judgment circuit is arranged to generate the DC offset detection result by comparing the filter output signal with a predetermined DC threshold.

A direct current (DC) offset protection circuit includes: a DC offset detection circuit and a control circuit. The DC offset detection circuit is arranged to detect whether a DC component exists in pulse-width-modulation (PWM) signals and accordingly generate a DC offset detection result. The control circuit is arranged to control an audio system according to the DC offset detection result. The DC offset detection circuit comprises a PWM polarity judgment circuit, a cascaded integrator-comb (CIC) filter and a DC offset judgment circuit. The PWM polarity judgment circuit is arranged to judge a polarity of complementary PWM signals and accordingly generate a polarity indication value. The CIC filter is arranged to generate a filter output signal by averaging a plurality of polarity indication values. The DC offset judgment circuit is arranged to generate the DC offset detection result by comparing the filter output signal with a predetermined DC threshold.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a first RF signal input terminal, a first RF signal output terminal, and a transistor. The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

An integrated circuit includes a multiplexer circuit configured to provide an output signal on a conductive line, a programmable gain amplifier having a non-inverting input connected to the conductive line to receive the output signal from the multiplexer, a slew rate adjust circuit connected at a first node on the conductive line between the multiplexer circuit and the programmable gain amplifier, a first switch including a first terminal connected to the first node and a second terminal connected to the input of the programmable gain amplifier, and a low pass filter connected between the first and second terminals of the first switch.

The driver circuit includes DC cut capacitors, an input buffer, input termination resistors connected in series between differential input signal terminals and an ESD protection circuit connected to a connection point of the input terminal resistors. The ESD protection circuit includes diodes.

In an example, a device includes a semiconductor substrate having a top surface. The device also includes a P-doped well formed in the semiconductor substrate and extending downwardly from the top surface. The device includes a cathode of a diode formed by an N-doped region in the P-doped well. The device also includes an anode of the diode formed by a P-doped region, the P-doped region spaced away from the N-doped region in the P-doped well. The device includes a deep N-type buried layer (DNBL) formed in the semiconductor substrate, the P-doped well formed between the top surface and the DNBL. The device also includes an N-doped well extending from the top surface to the DNBL.

In an example, a device includes a semiconductor substrate having a top surface. The device also includes a P-doped well formed in the semiconductor substrate and extending downwardly from the top surface. The device includes a cathode of a diode formed by an N-doped region in the P-doped well. The device also includes an anode of the diode formed by a P-doped region, the P-doped region spaced away from the N-doped region in the P-doped well. The device includes a deep N-type buried layer (DNBL) formed in the semiconductor substrate, the P-doped well formed between the top surface and the DNBL. The device also includes an N-doped well extending from the top surface to the DNBL.

This description relates, generally, to protecting a circuit from an input voltage. Various examples include an apparatus including one or more circuits to draw current from, or provide current to, a pair of connectors for an input circuit. The connectors may be for electrical coupling to first and second terminals of a twisted pair. The one or more circuits may be at least partially responsive to positive and negative biasing signals. The apparatus may additionally include an operational amplifier to generate the positive and negative biasing signals. The operational amplifier may include: a first input terminal at least partially responsive to a reference voltage and a second input terminal at least partially responsive to a common-mode voltage of the input circuit. Related systems and methods are also disclosed.

This description relates, generally, to protecting a circuit from an input voltage. Various examples include an apparatus including one or more circuits to draw current from, or provide current to, a pair of connectors for an input circuit. The connectors may be for electrical coupling to first and second terminals of a twisted pair. The one or more circuits may be at least partially responsive to positive and negative biasing signals. The apparatus may additionally include an operational amplifier to generate the positive and negative biasing signals. The operational amplifier may include: a first input terminal at least partially responsive to a reference voltage and a second input terminal at least partially responsive to a common-mode voltage of the input circuit. Related systems and methods are also disclosed.

Techniques for controlling one or more audio amplifiers in or associated with a device coupled on a local area network are disclosed. An example playback device includes a processor, an amplifier, a network interface, and a memory. The memory includes a software module that, when executed by the processor, causes the playback device to: operate in a first power mode in which the amplifier consumes a first amount of power; while operating in the first power mode, determine that a defined time has passed since receiving, via the network interface, a specified type of data packet; and based on determining that the defined time has passed since receiving the specified type of data packet, transition from operating in the first power mode to operate in a second power mode in which the amplifier consumes a second amount of power, wherein the first amount of power is greater than the second amount of power.