A packaged Radio Frequency power transistor device is described, which comprises a component carrier a die comprising a semiconductor transistor having a source, a gate and a drain, wherein the die is mounted at the component carrier, a ground connection being electrically connected to the source, an output lead being electrically connected to the drain, a resonance circuit being electrically inserted between the output lead and the ground connection, and a video lead being electrically connected to the resonance circuit. The video lead is configured for being connected to a first contact of a decoupling capacitor. The ground connection is configured for being connected to a second contact of the decoupling capacitor. It is further described a RF power amplifier comprising such a packaged Radio Frequency power transistor device.

A packaged Radio Frequency power transistor device is described, which comprises a component carrier a die comprising a semiconductor transistor having a source, a gate and a drain, wherein the die is mounted at the component carrier, a ground connection being electrically connected to the source, an output lead being electrically connected to the drain, a resonance circuit being electrically inserted between the output lead and the ground connection, and a video lead being electrically connected to the resonance circuit. The video lead is configured for being connected to a first contact of a decoupling capacitor. The ground connection is configured for being connected to a second contact of the decoupling capacitor. It is further described a RF power amplifier comprising such a packaged Radio Frequency power transistor device.

An embodiment of a Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and a peaking amplifier die. The RF signal splitter divides an input RF signal into first and second input RF signals, and conveys the first and second input RF signals to first and second splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier die includes one or more second power transistors configured to amplify, along a peaking signal path, the second input RF signal to produce an amplified second RF signal. The carrier and peaking amplifier die are coupled to the substrate so that the RF signal paths through the carrier and peaking amplifier die extend in substantially different (e.g., orthogonal) directions.

Radio frequency (RF) amplification devices and methods of amplifying RF signals are disclosed. In one embodiment, an RF amplification device includes a control circuit and a Doherty amplifier configured to amplify an RF signal. The Doherty amplifier includes a main RF amplification circuit and a peaking RF amplification circuit. The control circuit is configured to activate the peaking RF amplification circuit in response to the RF signal reaching a threshold level. In this manner, the activation of the peaking RF amplification circuit can be precisely controlled.

Radio frequency (RF) amplification devices and methods of amplifying RF signals are disclosed. In one embodiment, an RF amplification device includes a control circuit and a Doherty amplifier configured to amplify an RF signal. The Doherty amplifier includes a main RF amplification circuit and a peaking RF amplification circuit. The control circuit is configured to activate the peaking RF amplification circuit in response to the RF signal reaching a threshold level. In this manner, the activation of the peaking RF amplification circuit can be precisely controlled.

Aspects of this disclosure relate to bulk acoustic wave components. A bulk acoustic wave component can include a substrate, at least one bulk acoustic wave resonator on the substrate, and a cap enclosing the at least one bulk acoustic wave resonator. The cap can include a sidewall spaced apart from an edge of the substrate. The sidewall can be 5 microns or less from the edge of the substrate.

A device configured to perform wireless communication includes: a pre-distortion circuit configured to generate a pre-distorted input signal by performing pre-distortion on an input signal based on a parameter set comprising a plurality of coefficients; a power amplifier configured to generate an output signal by amplifying an RF signal based on the pre-distorted input signal; and a parameter obtaining circuit configured to obtain second memory polynomial modeling information corresponding to an operating frequency band based on first memory polynomial modeling information corresponding to each of a plurality of frequency sections and obtain a parameter set according to an indirect learning structure by using the second memory polynomial modeling information.

A device configured to perform wireless communication includes: a pre-distortion circuit configured to generate a pre-distorted input signal by performing pre-distortion on an input signal based on a parameter set comprising a plurality of coefficients; a power amplifier configured to generate an output signal by amplifying an RF signal based on the pre-distorted input signal; and a parameter obtaining circuit configured to obtain second memory polynomial modeling information corresponding to an operating frequency band based on first memory polynomial modeling information corresponding to each of a plurality of frequency sections and obtain a parameter set according to an indirect learning structure by using the second memory polynomial modeling information.

A front-end module is provided. The front-end module includes a reception amplifier configured to amplify a received radio-frequency (RF) signal, first and second series switches configured to control a switching operation to electrically connect an output terminal of the reception amplifier and first and second reception ports to each other, a radio-frequency (RF) splitter configured to simultaneously transfer a received RF signal, amplified by the reception amplifier or bypassing the reception amplifier, to the first and second reception ports, first and second shunt switches configured to control a switching operation to electrically connect a ground and first and second branch nodes between the RF splitter and the first and second reception ports to each other, and first and second reflected wave removing impedance elements electrically connected between the first and second branch nodes and a ground.

A method for controlling a supply voltage of a power amplifier, and an electronic device are provided. The method includes acquiring a state of an envelope of a to-be-amplified signal, where the state of the envelope includes a rising edge and a falling edge; acquiring a first voltage corresponding to the envelope when the state of the envelope is the falling edge, and controlling the supply voltage of the power amplifier according to the first voltage. The method also includes acquiring a second voltage corresponding to a maximum peak value of the to-be-amplified signal in a first preset time when the state of the envelope is the rising edge, and controlling, according to the second voltage, the supply voltage of the power amplifier in the first preset time.