Doherty power amplifiers (DPAs), and related circuits, devices, systems and methods of operation, are disclosed herein. In an example embodiment, a system includes a first transistor device operable as a carrier amplifier, a second transistor device operable as a peaking amplifier, and at least one first integrated passive device (IPD) coupled between a combining node and each of carrier and peaking amplifier output ports. The system includes a first frequency-corrective network coupling the carrier amplifier output port with the node, where the network is formed at least in part by the at least one first IPD and is configured to operate as a first quasi-inverter network that includes a low-pass network. Additionally, the system includes a second frequency-corrective network coupling the peaking amplifier output port with the node, where the network is formed at least in part by the at least one first IPD and includes a bandpass network.

According to an embodiment of the disclosure, a series or source feedback is provided to a solid-state power amplifier to achieve improved amplifier output power, good impedance match, and low voltage standing wave ratio (VSWR). In an embodiment, an inductive element is coupled to the source of the power amplifier transistor to serve as a series or source feedback for the transistor. In an embodiment, a high-impedance microstrip is provided as an inductive element coupled to the source of the transistor. In an embodiment, a series or source feedback is provided to each amplifier in a multistage amplifier circuit. In an embodiment, a greater series or source feedback is provided at a later stage of a multistage amplifier circuit, whereas a smaller series or source feedback is provided at an earlier stage of the multistage amplifier circuit.

A plurality of waveguide structures are loaded on a top surface opposed to a bottom surface of a metal case, on which a high-frequency circuit is mounted, a height, a width, and a length of each of the plurality of waveguide structures have dimensions corresponding to a quarter-wave of a cutoff frequency indicating a frequency band of a target electromagnetic wave to be blocked, and a width and a length of each of the plurality of waveguide structures have dimensions that allow only a high-frequency wave of a mode to propagate in the frequency band.

A power combiner circuit comprises a network topology for broadband RF and microwave systems that includes coupling elements, internodal matching sections, and an output matching section. The network topology serves as a combining mechanism for power from multiple power amplifiers. The network topology is designed so that characteristic impedances of transmissions lines serving as the coupling elements, internodal matching sections, and an output matching section produce a load impedance at an output port that is matched to the impedances seen by each power amplifier providing power to the power combiner circuit. Such a network topology is scalable to an unlimited number of power amplifiers, and enables a desired broadband frequency response for power amplification, while realizing a very low level of power output loss between input and output ports.

A power combiner circuit comprises a network topology for broadband RF and microwave systems that includes coupling elements, internodal matching sections, and an output matching section. The network topology serves as a combining mechanism for power from multiple power amplifiers. The network topology is designed so that characteristic impedances of transmissions lines serving as the coupling elements, internodal matching sections, and an output matching section produce a load impedance at an output port that is matched to the impedances seen by each power amplifier providing power to the power combiner circuit. Such a network topology is scalable to an unlimited number of power amplifiers, and enables a desired broadband frequency response for power amplification, while realizing a very low level of power output loss between input and output ports.

According to an embodiment of the disclosure, a series or source feedback is provided to a solid-state power amplifier to achieve improved amplifier output power, good impedance match, and low voltage standing wave ratio (VSWR). In an embodiment, an inductive element is coupled to the source of the power amplifier transistor to serve as a series or source feedback for the transistor. In an embodiment, a high-impedance microstrip is provided as an inductive element coupled to the source of the transistor. In an embodiment, a series or source feedback is provided to each amplifier in a multistage amplifier circuit. In an embodiment, a greater series or source feedback is provided at a later stage of a multistage amplifier circuit, whereas a smaller series or source feedback is provided at an earlier stage of the multistage amplifier circuit.

A power amplifier includes an active device and an output matching circuit operably connected with the active device. The output matching circuit includes a bandpass impedance transformer, in particular, a multimode bandpass impedance transformer. The multimode bandpass impedance transformer may include a multimode resonator and coupling feed lines.

A matching circuit includes: a first wire having one end connected to a first terminal and another end; a second wire having one end connected to the other end of the first wire and another end connected to a first reference potential and electromagnetically coupled to the first wire; and a third wire having one end connected to the one end of the second wire and another end connected to a second terminal and electromagnetically coupled to at least one of the first wire and the second wire.

A radio frequency integrated circuit comprising: at least one transistor; a matching circuit coupled to said transistor; and at least one bump is used to form a passive element in said matching circuit, and said bump is used for radio frequency matching, the bumps can be used as passive components for amplifier harmonic impedance matching or the bumps can be the amplifier's passive components of the harmonic impedance matching, both of them can enhance the power, bandwidth and efficiency of amplifiers and integrated circuits.

One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.