A distributed power amplifier includes radio frequency (RF) input and output terminals. A first field effect transistor (FET) is coupled at a first gate terminal to the RF input terminal and at a first drain terminal to the RF output terminal. The first FET has a first periphery and a first source terminal electrically connected to ground potential. A second FET has a second periphery smaller than the first periphery. The second FET has a second gate terminal electrically coupled to the first gate terminal through a first inductor, a second drain terminal electrically coupled to the first drain terminal through a second inductor, and a second source terminal electrically connected to the ground potential. A drain voltage terminal, which excludes a resistive element, is electrically coupled to a drain bias network through which a drain bias voltage is applied to the first drain terminal and the second drain terminal.

Disclosed is a reconfigurable power amplifier having a 2.sup.N−1 number of input-side reconfigurable quadrature couplers connected in a tree structure, wherein a 2.sup.(N−1) number of the input-side reconfigurable quadrature couplers have coupler output terminals, and a root of the tree structure is one of the input-side reconfigurable quadrature couplers having a main input terminal. Also included is a 2.sup.N−1 number of output-side reconfigurable quadrature couplers connected in a tree structure, wherein a 2.sup.(N−1) number of the output-side reconfigurable quadrature couplers have coupler input terminals, and a root of the tree structure is one of the output-side reconfigurable quadrature couplers having a main output terminal. Further included is a 2.sup.N number of constituent amplifiers divided into amplifier pairs having amplifier input terminals connected to corresponding ones of the coupler output terminals and having amplifier output terminals coupled to corresponding ones of the coupler input terminals.

In some embodiments, an amplifier system can include an amplifier circuit having first and second amplifiers configured to amplify respective first and second portions of an input signal. Each of the first and second amplifiers can include a cascode stage with input and output transistors arranged in a cascode configuration. The amplifier system can further include an envelope tracking bias circuit coupled to the amplifier circuit and configured to provide a bias signal to the output transistor of the cascode stage of at least one of the first and second amplifiers. The amplifier system can further include a supply circuit configured to provide a non-envelope tracking supply voltage to the output transistor of the cascode stage of the at least one of the first and second amplifiers.

A distributed amplifier includes: a transmission line having an input end that an input signal is input to; a transmission line having an output end that an output signal is output from; an input termination resistor connected to an end terminal of the transmission line; a plurality of unit cells arranged along the transmission lines, and having input terminals connected to the transmission line and output terminals connected to the transmission line; and a variable current source having one end connected to the end terminal of the transmission line and another end connected to a power supply voltage, and capable of adjusting a current amount between the transmission line and the power supply voltage.

Various embodiments provide systems, devices, and methods for a multi-core digital power amplifier with an unbalanced power combiner. In one example, two or more cores are combined with a transformer section that has a first coupling coefficient and another two or more cores are combined with a second transformer section that has a second coupling coefficient that is different than the first coupling coefficient. The outputs of different cores may be cross-coupled with the primary inductors of the transformers. The digital power amplifier may provide an output power that is flat over a relatively wide operating range. Other embodiments may be described and claimed.

A radio frequency module includes: a module board including a first principal surface and a second principal surface on opposite sides; a transmission input terminal; a transmission power amplifier that amplifies a transmission signal input from the transmission input terminal; a switch that switches between connecting and disconnecting the transmission input terminal and the transmission power amplifier, and a control circuit that controls the transmission power amplifier using digital control signals. The switch is disposed on the first principal surface, and the control circuit is disposed on the second principal surface.

A radio frequency module includes: a module board including a first principal surface and a second principal surface on opposite sides; a transmission input terminal; a transmission power amplifier that amplifies a transmission signal input from the transmission input terminal; a switch that switches between connecting and disconnecting the transmission input terminal and the transmission power amplifier, and a control circuit that controls the transmission power amplifier using digital control signals. The switch is disposed on the first principal surface, and the control circuit is disposed on the second principal surface.

In a distributed amplifier, a plurality of cascode amplifiers connected in parallel between an input side transmission line and an output side transmission line are provided, a transmission line is connected to an input terminal of an output transistor of each of the amplifiers, and a bias potential is applied from a bias circuit to the input terminal of the output transistor via the transmission line.

CRLH lines including left-handed shunt inductors and left-handed series capacitors are provided on gate side transmission lines of a plurality of FETs.

Apparatus including a first transmission line for transmitting radio frequency, RF, signals and at least one RF device including at least one active semiconductor device for processing RF signals, wherein said at least one RF device is coupled to said first transmission line, and wherein said first transmission line includes an electro-chromic, EC, material a permittivity of which can be controlled by applying a first control voltage to said first transmission line.