RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

An apparatus includes a transformer including a first inductor, a second inductor, and a third inductor. The apparatus also includes a power amplifier having an output coupled to the first inductor, a low-noise amplifier having an input coupled to a first terminal of the third inductor, and a fourth inductor having a first terminal and a second terminal, wherein the second terminal of the fourth inductor is coupled to a second terminal of the third inductor. The apparatus also includes a switch coupled between the first terminal of the third inductor and the first terminal of the fourth inductor.

Disclosed herein are signal amplifiers having a plurality of amplifier cores. Individual amplifier cores can be designed to enhance particular advantages while reducing other disadvantages. The signal amplifier can then switch between amplifier cores in a particular gain mode to achieve desired performance characteristics (e.g., improving noise figure or linearity). Examples of signal amplifiers disclosed herein include amplifier architectures with a low noise figure amplifier core that reduces the noise figure and a linearity boost amplifier core that increases linearity. The disclosed signal amplifiers can switch between a first active core and a second active core for a single or particular gain mode to achieve desired signal characteristics during different time periods.

Disclosed herein are signal amplifiers having a plurality of amplifier cores. Individual amplifier cores can be designed to enhance particular advantages while reducing other disadvantages. The signal amplifier can then switch between amplifier cores in a particular gain mode to achieve desired performance characteristics (e.g., improving noise figure or linearity). Examples of signal amplifiers disclosed herein include amplifier architectures with a low noise figure amplifier core that reduces the noise figure and a linearity boost amplifier core that increases linearity. The disclosed signal amplifiers can switch between a first active core and a second active core for a single or particular gain mode to achieve desired signal characteristics during different time periods.

An apparatus for turning off a cascode amplifier having a common-base transistor and a common-emitter transistor is disclosed that includes the cascode amplifier, a feedback circuit, and a bias circuit. The feedback circuit is configured to receive a collector-voltage from the collector of the common-emitter transistor when the common-emitter transistor is switched to a first OFF state and produce a first feedback signal. The collector-voltage is equal to an emitter voltage of the common-base transistor and the collector-voltage increases in response to switching the common-emitter transistor to the first OFF state. The bias circuit is configured to receive the first feedback signal and produce a bias-voltage. A first base-voltage is produced from the bias-voltage. The cascode amplifier is configured to receive the first base-voltage and a second base-voltage. The common-base transistor is configured to switch to a second OFF state in response to receiving the second base-voltage.

A multiplexer includes a transmission filter and a reception filter connected to a common terminal, a first inductor connected to the common terminal, and a multilayer substrate on which the transmission filter and the reception filter are mounted and which includes dielectric layers. The transmission filter includes a parallel-arm resonator connected to a path between the common terminal and a transmission terminal and a parallel-arm terminal, and a second inductor connected to the parallel-arm terminal and ground. The first inductor includes a first coil pattern on a first dielectric layer and a second coil pattern on a second dielectric layer. The second inductor includes a third coil pattern on the first dielectric layer and that is magnetically coupled to the first coil pattern. The inductance value of the second coil pattern is greater than that of the first coil pattern.

A radio-frequency module includes a mounting board, a first electronic component, and a second electronic component. The second electronic component is lower in height than the first electronic component. The mounting board includes dielectric layers, conductive layers, and via-conductors. In the mounting board, the dielectric layers and the conductive layers are stacked in the thickness direction of the mounting board. The mounting board has a first region and a second region. The first region overlaps the first electronic component and extends from a first major surface to a second major surface. The second region overlaps the second electronic component and extends from the first major surface to the second major surface. In the mounting board, the conductive layers in the first region are fewer than the conductive layers in the second region. In the mounting board, the first region is thinner than the second region.

An apparatus for detecting difference in operating characteristics of a main circuit by using a replica circuit is presented. In one exemplary case, a sensed difference in operating characteristics of the two circuits is used to drive a tuning control loop to minimize the sensed difference. In another exemplary case, several replica circuits of the main circuit are used, where each is isolated from one or more operating variables that affect the operating characteristic of the main circuit. Each replica circuit can be used for sensing a different operating characteristic, or, two replica circuits can be combined to sense a same operating characteristic.

An apparatus for detecting difference in operating characteristics of a main circuit by using a replica circuit is presented. In one exemplary case, a sensed difference in operating characteristics of the two circuits is used to drive a tuning control loop to minimize the sensed difference. In another exemplary case, several replica circuits of the main circuit are used, where each is isolated from one or more operating variables that affect the operating characteristic of the main circuit. Each replica circuit can be used for sensing a different operating characteristic, or, two replica circuits can be combined to sense a same operating characteristic.

Disclosed is a capacitive sensor chip based on a power-aware dynamic charge-domain amplifier array. The capacitive sensor chip is based on a zoom architecture and includes: an architecture having two or more stages for capacitive quantization in which a first stage performs coarse quantization using a successive approximation register (SAR) and a second stage performs fine quantization using a delta-sigma modulator, an amplifier in the capacitive sensor chip is powered by a floating capacitor, the floating capacitor is connected to a power supply to being charged and connected to the amplifier to power the amplifier by controlling switches; a first-order integrator of the delta-sigma modulator includes an amplifier array having a scale of N bits and 2.sup.N amplifiers where N is a positive integer. By the capacitive sensor chip based on the power-aware dynamic charge-domain amplifier array, utilization efficiency of charges can be effectively improved, power consumption overheads nay be effectively saved, energy efficiency of a system is greatly improved and a driving capability of the subsequent-stage amplifier may be adaptively distributed according to the size of an input capacitance.