A radio frequency circuit includes a switching circuit, an amplifying circuit, and a potential stabilizing circuit. The switching circuit includes a switch disposed on a path connecting a first terminal, to which a radio-frequency signal is input, to a second terminal, from which the radio-frequency signal is output, a first capacitor disposed between the first terminal and the switch, and a second capacitor disposed between the switch and the second terminal. The amplifying circuit includes an amplifier disposed between the switching circuit and the second terminal, a third capacitor disposed between the switching circuit and the amplifier, and a fourth capacitor disposed between the amplifier and the second terminal. The potential stabilizing circuit is connected to a first node which is located between the switching circuit and the amplifying circuit and which is located on a path connecting the second capacitor to the third capacitor.

A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.

A radio frequency (RF) amplifier circuit includes a field effect transistor (FET) (e.g., a FET belonging to a III-V FET enhancement group), where the FET includes a gate terminal coupled to an RF input node. The circuit further includes a prematch and biasing network coupled between a bias voltage node and the RF input node. The prematch and biasing network includes a nonlinear gate current blocking device configured to block a current from flowing between the bias voltage node and the RF input node.

Disclosed are a radio frequency power amplifier for inhibiting a harmonic wave and stray, a chip and a communication terminal. The radio frequency power amplifier comprises a power source, an LDO circuit, a harmonic inhibition unit, a stray inhibition unit, an amplifying unit, and a low-pass matching network. On the one hand, by means of the power source being connected to the harmonic inhibition unit, harmonic waves and stray of the power source at a resonant frequency are inhibited. Additionally, by means of the stray inhibition unit reducing the gain of the amplifying unit at a resonant frequency, output of stray is reduced. On the other hand, by means of the low-pass matching network being embedded at an output end of the radio frequency power amplifier, harmonic waves and the stray of a radio frequency signal amplified by the amplifying unit at different frequencies is effectively inhibited.

A wireless power transmitter may comprise: a signal generation unit which generates a differential signal; an amplifier which amplifies the differential signal with a predetermined gain; a resonance unit which generates an electromagnetic wave using the amplified differential signal and radiates the same; and a signal adjustment unit which senses at least one of the current and the voltage of the amplified differential signal at the input terminal of the resonance unit, and adjusts at least one of the phase and the amplitude of the differential signal output from the signal generation unit, on the basis of the result of the sensing.

An amplifier includes a semiconductor substrate. A first conductive feature partially covers the bottom substrate surface to define a conductor-less region of the bottom substrate surface. A first current conducting terminal of a transistor is electrically coupled to the first conductive feature. Second and third conductive features may be coupled to other regions of the bottom substrate surface. A first filter circuit includes an inductor formed over a portion of the top substrate surface that is directly opposite the conductor-less region. The first filter circuit may be electrically coupled between a second current conducting terminal of the transistor and the second conductive feature. A second filter circuit may be electrically coupled between a control terminal of the transistor and the third conductive feature. Conductive leads may be coupled to the second and third conductive features, or the second and third conductive features may be coupled to a printed circuit board.

Circuits, devices and methods are disclosed, including radio-frequency circuitry comprising a polar modulator configured to invert a sampled transmitted signal into an inverted sampled transmitted signal, a signal combiner configured to combine the inverted sampled transmitted signal with a received signal and a control logic circuit coupled to the polar modulator, the control logic circuit configured to adjust one or more tuning parameters of the polar modulator for inverting the sampled transmitted signal.

A control circuit with a bypass function includes a first signal terminal, a second signal terminal, an output terminal, a first switch unit to a fourth switch unit, an output switch unit and a bypass unit. The first signal terminal is used for receiving a first signal. The second signal terminal is used for receiving a second signal. The first switch unit is coupled to the first signal terminal. The second switch unit is coupled between the first switch unit and the output switch unit. The third switch unit is coupled to the second signal terminal. The fourth switch unit is coupled between the third switch unit and the output switch unit. The output switch unit is coupled between the second switch unit and the output terminal. The bypass unit is coupled between the first switch unit and the output terminal to provide a bypass path corresponding to the first signal.

A radio frequency (RF) amplifier circuit includes an amplifier device and a first baseband bias circuit. The amplifier device includes a first input configured to receive a first signal to be amplified and a first output configured to output a first amplified signal. The first baseband bias circuit includes an input coupled to the first output of the amplifier device. The first baseband bias circuit includes a first envelope decoupling circuit and a first harmonic decoupling circuit. The first envelope decoupling circuit includes a first bulk capacitor and a first distributed inductor configured to resonate in a baseband frequency range. The first harmonic decoupling circuit includes a second bulk capacitor and a second distributed inductor configured to resonate at a harmonic frequency of the frequency of the first signal received at the input of the amplifier device.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.