H03F2200/126

Preamplifying circuit

Provided is a preamplifying circuit, including a first amplifier and a second amplifier sequentially connected in series, wherein an output end of the second amplifier is connected to a circuit output end, and an input end of the first amplifier is connected to a circuit input end. The preamplifying circuit further includes a positive feedback branch including a diode group and a third amplifier, wherein one end of the diode group is connected to the input end of the first amplifier. The positive feedback circuit can positively feed part of signals back to the other end of the diode group, so that voltage drops at two ends of the diode group can be reduced, and harmonic distortion caused by nonlinearity of the diode group is reduced. Thus, the sound quality detected by a microphone sensor is improved.

Sensor amplifier arrangement and method of amplifying a sensor signal
09948250 · 2018-04-17 · ·

A sensor amplifier arrangement includes an amplifier having a signal input to receive a sensor signal and a signal output to provide an amplified sensor signal, and a feedback path that couples the signal output to the signal input and provides a feedback current that is an attenuated signal of the amplified sensor signal and is inverted with respect to the sensor signal.

Field effect transistor (FET) structure with integrated gate connected diodes

A structure having: a plurality of field effect transistors (FETs) connected between a common input and a common output, each one of the field effect transistors comprises: a source region, a drain region, and a gate electrode for controlling carriers through a channel region of a transistor region of the structure between the source region and the drain region; a plurality of diodes, each one of the diodes being associated with a corresponding one of the plurality of FETs, each one of the diodes having an electrode in Schottky contact with a diode region of the corresponding one of the FETs. The gate electrode and the diode electrode extend along parallel lines. The source region, the drain region, the channel region, and a diode region having therein the diode are disposed along a common line.

FIELD EFFECT TRANSISTOR (FET) STRUCTURE WITH INTEGRATED GATE CONNECTED DIODES
20170200713 · 2017-07-13 · ·

A structure having: a plurality of field effect transistors (FETs) connected between a common input and a common output, each one of the field effect transistors comprises: a source region, a drain region, and a gate electrode for controlling carriers through a channel region of a transistor region of the structure between the source region and the drain region; a plurality of diodes, each one of the diodes being associated with a corresponding one of the plurality of FETs, each one of the diodes having an electrode in Schottky contact with a diode region of the corresponding one of the FETs. The gate electrode and the diode electrode extend along parallel lines. The source region, the drain region, the channel region, and a diode region having therein the diode are disposed along a common line.

FIELD EFFECT TRANSISTOR (FET) STRUCTURE WITH INTEGRATED GATE CONNECTED DIODES
20170148783 · 2017-05-25 · ·

A structure having: a plurality of field effect transistors (FETs) connected between a common input and a common output, each one of the field effect transistors comprises: source region, a drain region, and a gate electrode for controlling carriers through a channel region of a transistor region of the structure between the source region and the drain region; a plurality of diodes, each one of the diodes being associated with a corresponding one of the plurality of FETs, each one of the diodes having an electrode in Schottky contact with a diode region of the corresponding one of the FETs. The gate electrode and the diode electrode extend along parallel lines. The source region, the drain region, the channel region, and a diode region having therein the diode are disposed along a common line.

OPTICAL DATA SIGNAL RECEIVER
20250337501 · 2025-10-30 ·

An assembly of electronic components for reception of data using an optical fibre wherein data is received in bursts, and wherein the assembly includes: a photodiode; a transimpedance amplifier coupled to the photodiode, wherein a gain of the transimpedance amplifier is adjusted based on a level of a gain control signal.

Closed loop power control
12556139 · 2026-02-17 · ·

A control system is configured to control an output power of a power amplifier. The control system is operable to detect when the power amplifier is in first state and responsively provide first additional bias to the power amplifier. The first additional bias assists or enables the power amplifier in increasing the output power. The control system is also operable to detect when the power amplifier is in a second state and responsively provide second additional bias to the power amplifier. The second additional bias assists or enables the power amplifier in increasing the amount of output power.

CLOSED LOOP POWER CONTROL
20260128715 · 2026-05-07 ·

A control system is configured to control an output power of a power amplifier. The control system is operable to detect when the power amplifier is in first state and responsively provide first additional bias to the power amplifier. The first additional bias assists or enables the power amplifier in increasing the output power. The control system is also operable to detect when the power amplifier is in a second state and responsively provide second additional bias to the power amplifier. The second additional bias assists or enables the power amplifier in increasing the amount of output power.