A rapid sensing value estimation circuit and a method thereof are provided. The circuit includes a first sensing unit, an integration sensing circuit and a rapid estimation circuit. The rapid estimation circuit includes a clock generator, a second counter, a first digital comparator, an arithmetic module and a remainder calculation module. The clock generator generates a clock signal with a first frequency. The second counter counts the clock signal within the integration time to generate a second count value. The first digital comparator determines whether the second count value exceeds a first predetermined count value when the first count value increases. The arithmetic module calculates an estimated count value result and a remainder, and the remainder calculation module can further calculate and estimate values of decimal places of this signal based on the remainder.

An asymmetric signal path approach is used to extract differential signals out of the photodetector (e.g., a photodiode) for amplification by a differential transimpedance amplifier (TIA). This asymmetric-path differential TIA configuration has less low-frequency Inter Symbol Interference (ISI) (also known as Baseline Wander), less high-frequency noise amplification, and higher bandwidth capabilities. There is no power penalty with this design in comparison to a single-ended TIA, can extend the range of the link for a given system power consumption, and can decrease transmitter power for a given range.

Methods, systems, and devices for operating an amplifier with a controllable pull-down capability are described. A memory device may include a memory array and a power circuit that generates an internal signal for components in the memory array. The power circuit may include an amplifier and a power transistor that is coupled with the amplifier. A pull-down capability of the amplifier may be controllable using an external signal that is based on a difference between a reference signal and the internal signal. The power circuit may also include a comparator that is coupled with the amplifier and configured to compare the reference signal and the internal signal. Components of the comparator may be integrated with components of the amplifier, may share a bias circuit, and may use nodes within the amplifier to control the comparator. A signal output by the comparator may control the pull-down capability of the amplifier.

A circuit device includes an analog front-end circuit that receives a target signal is input, and a processing circuit that performs arithmetic processing based on an output signal from the analog front-end circuit. The analog front-end circuit includes a plurality of comparator circuits that compare the voltage level of the target signal to a plurality of threshold voltages and output a plurality of comparison result signals. The processing circuit obtains the transition timing of the target signal based on the comparison result signals and delayed-time information of the analog front-end circuit.

Embodiments of the disclosure include a switch having an on-state resistance that varies based on a temperature coefficient of the switch and an overcurrent protection circuit coupled to the switch and having an adjustable overcurrent threshold level determined based on an adjustable voltage generated by the overcurrent protection circuit, the adjustable voltage generated based on the temperature coefficient of the switch.

A variable-current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied. The variable-current trans-impedance amplifier may include multiple stages, including a first stage having N-P transistor pairs configured to receive an input signal and produce a single-ended amplified signal.

Various examples are directed to a frequency-compensated amplifier circuit comprising a first multi-stage amplifier comprising a first amplifier input node, a first amplifier output node, and a first amplifier intermediate node. A first feedback path between the first amplifier input node and the first amplifier output node comprises a feedback resistance. A second feedback path between the first amplifier output node and the first amplifier intermediate node comprises a first capacitor and a portion of the feedback resistance. A first switch circuit may be electrically coupled to the first capacitor and to the feedback resistance. The first switch circuit may have a first state in which the first capacitor is coupled to a first tap point of the feedback resistance and the portion of the feedback resistance has a first value. The first switch circuit may also have a second state in which the first capacitor is coupled to a second tap point of the feedback resistance and the portion of the feedback resistance has a second value different than the first value.

The present disclosure provides for process and temperature compensation in a transimpedance amplifier (TIA) using a dual replica via monitoring an output of a first TIA (transimpedance amplifier) and a second TIA; configuring a first gain level of the first TIA based on a feedback resistance and a reference current applied at an input to the first TIA; configuring a second gain level of the second TIA and a third TIA based on a control voltage; and amplifying a received electrical current to generate an output voltage using the third TIA according to the second gain level. In some embodiments, one or both of the second TIA and the third TIA include a configurable feedback impedance used in compensating for changes in the second gain level due to a temperature of the respective second or third TIA via the configurable feedback impedance of the respective second or third TIA.

Provided are a semiconductor device and a sensor system capable of achieving improvement of noise resistance. Thus, an output circuit 106a in the semiconductor device includes: input terminals 207n, 207p; and an output terminal 208; an output amplifier 201 connecting the input terminals 207n, 207p to the output terminal 208; a feedback element 203 returning the output terminal 208 to the input terminal 207n; a switching transistor 204; and a resistance element 206. A drain of the switching transistor 204 is connected to the input terminal 207n. The resistance element 206 is provided between a back gate of the switching transistor 204 and a power source Vdd and has impedance of a predetermined value or more for suppressing noise of a predetermined frequency generated at the input terminal 207n.

A semiconductor device includes input and output terminals, first and second power supply terminals, first and second transistors, and a first resistance element. In the first transistor, gate and source terminals are respectively connected to the input terminal and the first power supply terminal, a drain terminal is connected to the second power supply terminal in direct current and to the output terminal, and the gate and drain terminals are connected via the first resistance element. In the second transistor, a source terminal is connected to the first power supply terminal, and gate and drain terminals are short-circuited at a node connected to the gate terminal of the first transistor in direct current. In a lower frequency region, an impedance of the first resistance element is lower than impedances of parasitic capacitances in the first transistor between the gate and drain terminals and between the gate and source terminals.