An active noise source apparatus includes a pair of a first and second switched-biased noise amplifier branches (22, 23). A directional coupler (24) having a pair of input ports (3, 4) connected to combine the noise outputs from the first and second switched-biased noise amplifiers. One output port (4) of the directional coupler (24) is connected to a matched termination (Rtermination) and another output port (2) of the directional coupler (24) is connected to an output (25) of the active noise source.

A concurrent multi-band linearized transmitter (CMLT) has a concurrent digital multi-band predistortion block (CDMPB) and a concurrent multi-band transmitter (CMT) connected to the CDMPB. The CDMPB can have a plurality of digital baseband signal predistorter blocks (DBSPBs), an analyzing and modeling (A&M) stage, and a signal observation feedback loop. Each DBSPB can have a plurality of inputs, each corresponding to a single frequency band of the multi-band input signal, and its output corresponding to a single frequency band; each output connect corresponding to an input of the CMLT. The A&M stage can have a plurality of outputs connected to and updating the parameters of the DBSPBs, and a plurality of inputs connected to either both outputs of the signal observation loop or the output of the subsampling loop and to outputs of the DBSPBs. The A&M stage can perform signals' time alignment, reconstruction of signals and compute parameters of DBSPBs.

A compound semiconductor device includes a compound semiconductor stack structure, a protective film provided on the compound semiconductor stack structure and containing titanium oxide, and a polycrystalline diamond film provided on the protective film.

A compound semiconductor device includes a semiconductor multilayer structure including an electron transit layer and an electron supply layer of a compound semiconductor; a source electrode, a gate electrode, and a drain electrode that are disposed above the semiconductor multilayer structure and are aligned in a first direction; a first insulating film that is formed on the semiconductor multilayer structure between the gate electrode and the drain electrode, and has a tensile stress; a second insulating film that is formed on the semiconductor multilayer structure between the gate electrode and the source electrode, and has a compressive stress; and a protective film that is formed between the first insulating film and the semiconductor multilayer structure, and between the second insulating film and the semiconductor multilayer structure.

A signal compensation device is disclosed. The signal compensation device includes an operation circuit and a modulation circuit. The operation circuit is configured to generate a control signal according to a first data signal and a second data signal, in which the second data signal is generated according to the first data signal by a signal conversion circuit. The modulation circuit is configured to provide a loop gain according to the control signal to compensate an attenuation of the signal conversion circuit.

An envelope tracking (ET) radio frequency (RF) front-end circuit is provided. The ET RF front-end circuit includes an ET integrated circuit(s) (ETIC(s)), a local transceiver circuit, a target voltage circuit(s), and a number of power amplifiers. The local transceiver circuit receives an input signal(s) from a coupled baseband transceiver and generates a number of RF signals. The target voltage circuit(s) generates a time-variant ET target voltage(s) based on the input signal(s). The ETIC(s) generates multiple ET voltages based on the time-variant ET target voltage(s). The power amplifiers amplify the RF signals based on the ET voltages. Given that the time-variant ET target voltage(s) is generated inside the self-contained ET RF front-end circuit, it is possible to reduce distortion in the time-variant ET target voltage(s), thus helping to improve operating efficiency of the power amplifiers, especially when the RF signals are modulated with a higher modulation bandwidth (e.g., ≥200 MHz).

A load-insensitive power amplifier power detector that excludes the use of couplers is disclosed. The load-insensitive power amplifier power detector may include a voltage sampling circuit in electrical communication with a collector of a power amplifier and configured to sample a first voltage from the power amplifier. The load-insensitive power amplifier power detector may include a current sampling circuit in electrical communication with the collector of the power amplifier and configured to sample an output current from the power amplifier. Further, the load-insensitive power amplifier power detector may include a current-to-voltage converter connected between the voltage sampling circuit and an output of the load-insensitive power amplifier power detector. The current-to-voltage converter may be configured to convert the output current to obtain a second voltage. Moreover, a combination of the first voltage and the second voltage may form a detector voltage corresponding to an incident power of the power amplifier.

This application is generally related to methods and systems for improving amplifier performance. For example, the system includes two or more gain and phase modulators. The system also includes two or more component amplifiers operably coupled to, and downstream of, the power splitter, where each of the two or more component amplifiers is operably coupled to a respective one of the two or more gain and phase modulators. The system further includes a power combiner operably coupled to, and downstream of, the two or more component amplifiers, configured to output a power signal. The system even further includes a Walsh generator configured to generate and transmit first and second Walsh codes to each of the two or more gain and phase modulators. The first Walsh code is orthogonal to the second Walsh code. A first set of the first and second Walsh codes is inverted with respect to a second set of the first and second Walsh codes.

A directional coupler and a method for manufacturing the same are disclosed. According to an embodiment, the directional coupler comprises a first transmission line configured to receive an input signal. The directional coupler further comprises a second transmission line that can be coupled to the first transmission line by electromagnetic coupling to output a coupled signal. The first transmission line is further configured to act as a quarter-wave impedance transformer. A radio transmitter comprising the directional coupler and a radio device comprising the radio transmitter are also disclosed.

An electronic device is provided. The electronic device includes an antenna, a transmission path electrically connected to the antenna and including at least one amplifier, a transceiver connected to the transmission path and converting a signal, a feedback path connected between the transmission path and the transceiver, at least one processor connected to the transceiver and communicating with at least one external electronic device by using the transceiver, and a memory connected to the at least one processor. The processor may obtain first information about a first phase and a first magnitude, which are associated with the first frequency, and second information about a second phase and a second magnitude, which are associated with a multiplied frequency of the first frequency, from the transmission signal and the reflection signal using the transceiver, and may determine a state of the electronic device based on the first information and the second information.