A receiver front end amplifier capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a common source configured input FET and a common gate configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors, and gate to ground capacitors for each leg can be used to further improve the matching performance of the invention.

In a semiconductor device, a first variable gain amplifier and a second variable gain amplifier constitute a switched capacitor type variable gain amplifier. A selection switch switches connection among the first variable gain amplifier, the second variable gain amplifier, and a load circuit such that the first variable gain amplifier and the load circuit are connected to each other when an amplification factor of the first variable gain amplifier is a predetermined gain or less, and the second variable gain amplifier is connected between the first variable gain amplifier and the load circuit when the amplification factor of the first variable gain amplifier is larger than the predetermined gain.

A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a common source configured input FET and a common gate configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

An envelope tracking amplifier having stacked transistors is presented. The envelope tracking amplifier uses dynamic bias voltages at one or more gates of the stacked transistors in addition to a dynamic bias voltage at a drain of a transistor.

Control systems and methods for power amplifiers operating in envelope tracking mode are presented. A set of corresponding functions and modules are described and various possible system configurations using such functions and modules are presented.

A compensation circuit of a power amplifier includes a varactor, a voltage sensor and a control circuit. The varactor is coupled to an input terminal of the power amplifier. The voltage sensor is arranged for detecting an amplitude of an input signal of the power amplifier to generate a detecting result. The control circuit is coupled to the varactor and the voltage sensor, and is arranged for controlling a bias voltage of the varactor to adjust a capacitance of the varactor according to the detecting result.

A sensor amplifier arrangement includes an amplifier having a signal input to receive a sensor signal and a signal output to provide an amplified sensor signal, and a feedback path that couples the signal output to the signal input and provides a feedback current that is an attenuated signal of the amplified sensor signal and is inverted with respect to the sensor signal.

Provided is a low-noise amplifier that can effectively suppress noise included in an input signal. A low-noise amplifier according to an embodiment of the present invention amplifies a reception signal in a predetermined frequency band from an antenna. The low-noise amplifier includes an input terminal, an output terminal, a field effect transistor, and a branch circuit. The branch circuit is branched from a circuit connecting the input terminal or the output terminal to the field effect transistor. The branch circuit is connected to the elastic wave resonator.

An envelope tracking amplifier having stacked transistors is presented. The envelope tracking amplifier uses dynamic bias voltages at one or more gates of the stacked transistors in addition to a dynamic bias voltage at a drain of a transistor.

Processes and systems for producing glass fibers having regions devoid of glass using submerged combustion melters, including feeding a vitrifiable feed material into a feed inlet of a melting zone of a melter vessel, and heating the vitrifiable material with at least one burner directing combustion products of an oxidant and a first fuel into the melting zone under a level of the molten material in the zone. One or more of the burners is configured to impart heat and turbulence to the molten material, producing a turbulent molten material comprising a plurality of bubbles suspended in the molten material, the bubbles comprising at least some of the combustion products, and optionally other gas species introduced by the burners. The molten material and bubbles are drawn through a bushing fluidly connected to a forehearth to produce a glass fiber comprising a plurality of interior regions substantially devoid of glass.