Systems and methods are disclosed for on-chip harmonic filtering for radio frequency (RF) communications. A filtering and matching circuit for an integrated circuit includes a first capacitance coupled in parallel with a first inductance, a second inductance coupled to the first inductance, and a variable second capacitance coupled between the first and second inductance. The variable second capacitance is controlled to provide filtering with respect to the RF signal as well as impedance matching with respect to a load coupled to the connection pad. For one embodiment, the variable second capacitance includes a coarse-tune variable capacitor circuit and a fine-tune variable capacitor circuit. The coarse-tuning controls impedance matching, and the fine tuning controls a notch for the filtering. The load can be an antenna for the RF communications. The integrated circuit can include a receive path, a transmit path, or both.

Variable-phase amplifier circuits and devices. In some embodiments, an amplifier can include a variable-gain stage having a plurality of switchable amplification branches, with each being capable of being activated, such that a combination of one or more activated amplification branches provides respective gain level and phase shift. The plurality of switchable amplification branches can be configured such that the phase shift provided by each combination of one or more activated amplification branches compensates for a phase shift associated with the amplifier operating with the respective gain level of the variable-gain stage.

A tunable filter is described where the frequency response as well as bandwidth and transmission loss characteristics can be dynamically altered, providing improved performance for transceiver front-end tuning applications. The rate of roll-off of the frequency response can be adjusted to improve performance when used in duplexer applications. The tunable filter topology is applicable for both transmit and receive circuits. A method is described where the filter characteristics are adjusted to account for and compensate for the frequency response of the antenna used in a communication system.

A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a common source configured input FET and a common gate configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.

This applications relates to methods and apparatus for amplifying signals from capacitive transducers, in particular MEMS transducers such as MEMS capacitive microphones. An amplifier circuit has a signal node for receiving the input signal, a transducer biasing node for outputting a transducer bias voltage for biasing the capacitive transducer, and a voltage buffer configured to generate a buffered bias voltage at a buffer node. An amplifier arrangement is configured to receive the input signal from the signal node and the buffered bias voltage. The amplifier circuit comprises a signal path for supplying the buffered bias voltage to the transducer biasing node via a first capacitance, and the amplifier arrangement comprises a feedback resistor network configured such that: a change in input signal with respect to the buffered bias voltage results in a change in the output signal with respect to the buffered bias voltage with a gain greater than one; and a change in the buffered bias voltage results in a change in the output signal with a gain equal to one.

An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gate of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.

Examples disclosed herein relate to a dynamic supply modulation power amplifier architecture for millimeter wave applications. The architecture includes phase shifters coupled to a power input port, power amplifiers coupled to respective power output ports, variable gain amplifiers coupled to the phase shifters and to the power amplifiers and are configured to supply dynamically varying input power to the power amplifiers. The architecture includes a first look-up table coupled to the variable gain amplifiers to control the variable gain amplifiers. The architecture also includes a second look-up table coupled to the power amplifiers, where each of the power amplifiers is supply modulated by active drain voltage modulation controlled by the second look-up table and variable input power from the variable gain amplifiers. Other examples disclosed herein include a radar system for use in an autonomous driving vehicle and an analog beamforming antenna for millimeter wave applications.

This disclosure describes amplifiers that include impedance circuits that are configured to adapt to various contexts. For example, a variable-gain amplifier can include a gain circuit configured to amplify a signal and to operate in a plurality of gain modes, and an impedance circuit coupled to the gain circuit. The impedance circuit can include an inductor and a switching-capacitive arm coupled in parallel to the inductor. The impedance circuit can be configured to operate based at least in part on a gain mode from among the plurality of gain modes.

This applications relates to methods and apparatus for amplifying signals from capacitive transducers, in particular MEMS transducers such as MEMS capacitive microphones. An amplifier circuit has a signal node for receiving the input signal, a transducer biasing node for outputting a transducer bias voltage for biasing the capacitive transducer, and a voltage buffer configured to generate a buffered bias voltage at a buffer node. An amplifier arrangement is configured to receive the input signal from the signal node and the buffered bias voltage. The amplifier circuit comprises a signal path for supplying the buffered bias voltage to the transducer biasing node via a first capacitance, and the amplifier arrangement comprises a feedback resistor network configured such that: a change in input signal with respect to the buffered bias voltage results in a change in the output signal with respect to the buffered bias voltage with a gain greater than one; and a change in the buffered bias voltage results in a change in the output signal with a gain equal to one.