H03F2200/216

RF power transistors with impedance matching circuits, and methods of manufacture thereof
10951180 · 2021-03-16 · ·

Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit is an output pre-match impedance conditioning shunt circuit, which includes a first shunt inductance, a second shunt inductance, and a shunt capacitor coupled in series. The first shunt inductance comprises a plurality of bondwires coupled between the first current carrying terminal and the second shunt inductance, and the second shunt inductance comprises an integrated inductor coupled between the first shunt inductance and a first terminal of the shunt capacitor. The shunt capacitor is configured to provide capacitive harmonic control of an output of the transistor.

LOAD MODULATED BALANCED POWER AMPLIFIER INTEGRATED CIRCUITS INCLUDING TRANSFORMER-BASED HYBRID SPLITTER/COMBINER CIRCUITS

A load modulated balanced amplifier (LMBA) circuit can include an input pad of the LMBA circuit configured to receive an input signal on a semiconductor die. A transformer-based hybrid splitter can be coupled to the input pad and configured to provide a first split input signal and a second split input signal from the input signal. A control power amplifier circuit coupled the first split input signal and a power amplifier circuit coupled to the second split input signal.

Amplifiers suitable for mm-wave signal splitting and combining

A MIMO amplifier circuit operable to couple one or more selectable input ports to one or more selectable output ports. The circuit includes N input transistors and M output transistors. Each input transistor has its base coupled to a respective input port node, its emitter coupled to ground, and its collector connected to an intermediate node. Each output transistor has its base coupled to a bias node, its emitter connected to the intermediate node, and its collector coupled to a respective output port nodes. Each input transistor enables the respective input port node when its base is biased. Each output transistor enables the respective output port node when its bias node is asserted. The base of the input transistor for each enabled port is biased to provide a quiescent current I.sub.0*m/n through that input transistor, where m is the number of enabled output ports and n is the number of enabled input ports.

MULTI-MODE ENVELOPE TRACKING AMPLIFIER CIRCUIT
20200403574 · 2020-12-24 ·

A multi-mode envelope tracking (ET) amplifier circuit is provided. The multi-mode ET amplifier circuit can operate in a low-resource block (RB) mode, a mid-RB mode, and a high-RB mode. The multi-mode ET amplifier circuit includes fast switcher circuitry having a first switcher path and a second switcher path and configured to generate an alternating current (AC) current. A control circuit activates the fast switcher circuitry in the mid-RB mode and the high-RB mode, while deactivating the fast switcher circuitry in the low-RB mode. More specifically, the control circuit selectively activates one of the first switcher path and the second switcher path in the mid-RB mode and activates both the first switcher path and the second switcher path in the high-RB mode. As a result, it is possible to improve efficiency of ET tracker circuitry and the multi-mode ET amplifier circuit in all operation modes.

Method for improving linearity of radio frequency power amplifier, compensation circuit and communications terminal

A method for improving the linearity of a radio frequency power amplifier, a compensation circuit (307) for implementing the method, and a communications terminal with the compensation circuit (307). In the method, a compensation circuit (307) is connected between a base (a3) and a collector (b3) of a transistor of a common emitter amplifier (306), in order to neutralize the impact of a variation in capacitance between the base (a3) and the collector (b3) of the transistor (306) according to a radio frequency signal. No additional direct-current power consumption is needed, and degradation in performance of other radio frequency power amplifiers can be avoided. The corresponding compensation circuit (307) can be easily integrated with a main amplification circuit, without affecting other performance of the main amplification circuit, and provides high adjustability.

AMPLIFIERS SUITABLE FOR MM-WAVE SIGNAL SPLITTING AND COMBINING
20200321931 · 2020-10-08 · ·

A MIMO amplifier circuit operable to couple one or more selectable input ports to one or more selectable output ports. The circuit includes N input transistors and M output transistors. Each input transistor has its base coupled to a respective input port node, its emitter coupled to ground, and its collector connected to an intermediate node. Each output transistor has its base coupled to a bias node, its emitter connected to the intermediate node, and its collector coupled to a respective output port nodes. Each input transistor enables the respective input port node when its base is biased. Each output transistor enables the respective output port node when its bias node is asserted. The base of the input transistor for each enabled port is biased to provide a quiescent current I.sub.0*m/n through that input transistor, where m is the number of enabled output ports and n is the number of enabled input ports.

Low power optical link
10797658 · 2020-10-06 · ·

An optical receiver circuit is disclosed, including a photodiode, an output terminal, a first amplifier stage, and an electrostatic discharge (ESD) protection circuit. The photodiode may generate a receiver current based on received optical signals. The first amplifier stage may be coupled between the photodiode and the output terminal and include a first inductor coupled between the photodiode and an input of a first inverter, and a second inductor coupled between the input of the first inverter and a first resistor. The first resistor may be coupled between the second inductor and an output of the first inverter. ESD protection circuit may be coupled to the input of the first inverter. The output terminal may generate an output signal based at least in part on the output of the first inverter.

Multi-mode envelope tracking amplifier circuit
10797649 · 2020-10-06 · ·

A multi-mode envelope tracking (ET) amplifier circuit is provided. The multi-mode ET amplifier circuit can operate in a low-resource block (RB) mode, a mid-RB mode, and a high-RB mode. The multi-mode ET amplifier circuit includes fast switcher circuitry having a first switcher path and a second switcher path and configured to generate an alternating current (AC) current. A control circuit activates the fast switcher circuitry in the mid-RB mode and the high-RB mode, while deactivating the fast switcher circuitry in the low-RB mode. More specifically, the control circuit selectively activates one of the first switcher path and the second switcher path in the mid-RB mode and activates both the first switcher path and the second switcher path in the high-RB mode. As a result, it is possible to improve efficiency of ET tracker circuitry and the multi-mode ET amplifier circuit in all operation modes.

Packaged RF power amplifier having a high power density

A packaged RF power amplifier comprises an output network coupled to the output of a RF power transistor, which output network comprises a plurality of first bondwires extending along a first direction between the output of transistor and an output lead of the package, a series connection of a second inductor and a first capacitor between the output of the RF power transistor and ground, and a series connection of a third inductor and a second capacitor connected in between ground and the junction between the second inductor and the first capacitor. The first and second capacitors are integrated on a single passive die and the third inductor comprises a first part and a second part connected in series, wherein the first part extends at least partially along the first direction, and wherein the second part extends at least partially in a direction opposite to the first direction.

RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof

An amplifier includes a semiconductor substrate. A first conductive feature partially covers the bottom substrate surface to define a conductor-less region of the bottom substrate surface. A first current conducting terminal of a transistor is electrically coupled to the first conductive feature. Second and third conductive features may be coupled to other regions of the bottom substrate surface. A first filter circuit includes an inductor formed over a portion of the top substrate surface that is directly opposite the conductor-less region. The first filter circuit may be electrically coupled between a second current conducting terminal of the transistor and the second conductive feature. A second filter circuit may be electrically coupled between a control terminal of the transistor and the third conductive feature. Conductive leads may be coupled to the second and third conductive features, or the second and third conductive features may be coupled to a printed circuit board.