Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

A power amplifier circuit includes a first transistor having a first terminal to which a voltage corresponding to a variable power supply voltage is to be supplied and a second terminal to which a radio-frequency signal is to be supplied, the first transistor being configured to amplify the radio-frequency signal, a bias circuit configured to supply a bias current or voltage to the second terminal of the first transistor, and an adjustment circuit configured to adjust the bias current or voltage in accordance with the variable power supply voltage supplied from a power supply terminal.

A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

A transmission/reception module includes a substrate including a transmission signal input terminal, a reception signal output terminal, and an antenna terminal, an antenna switch circuit provided on the substrate and configured to output a transmission signal input from the transmission signal input terminal to the antenna terminal and configured to output a reception signal input from the antenna terminal to the reception signal output terminal, and a first inductor included in an input/output filter circuit provided between the antenna switch circuit and the antenna terminal. The first inductor includes a conductor whose winding axis direction is orthogonal to the substrate.

A measurement circuit comprises an input terminal to receive a current signal, a first circuit branch coupled to the first terminal and including one or more circuit elements to receive a portion of the current signal, a second circuit branch coupled to the first terminal and including one or more additional circuit elements to receive another portion of the current signal, a nonlinear circuit element coupling the first circuit branch to the second circuit branch, and a quantization circuit configured to produce an input current measurement of current in the first and second circuit branches, and to include current in the second circuit branch in the input current measurement according to a magnitude of the input current signal.

A first sub-collector layer functions as an inflow path of a collector current that flows in a collector layer of a heterojunction bipolar transistor. A collector ballast resistor layer having a lower doping concentration than the first sub-collector layer is disposed between the collector layer and the first sub-collector layer.

A low noise amplifier includes a first input port configured to receive a first input signal, a second input port configured to receive a second input signal, and a first amplifier stage including a first gain stage connected to the first input port and the second input port, and a first drive stage between the first gain stage and a first load circuit. The first gain stage includes a first-first gain block connected to the first input port, a first-second gain block connected to the second input port, and a first degeneration inductor between a ground terminal and a first common node of the first-first gain block and the first-second gain block. The amplifier includes a second amplifier stage including a second gain stage connected to the first input port and the second input port, and a second drive stage between the second gain stage and a second load.

Doherty radio frequency (RF) amplifier circuitry includes an input node, an output node, a main amplifier path, and a peaking amplifier path. The main amplifier path is coupled between the input node and the output node and includes a main amplifier. The peaking amplifier path is coupled in parallel with the main amplifier path between the input node and the output node, and includes a peaking amplifier and a peaking variable gain preamplifier between the input node and the peaking amplifier. The peaking variable gain preamplifier is configured to adjust a current provided to the peaking amplifier.

Embodiments of the present disclosure include a harmonic power amplifying circuit with high efficiency and high bandwidth and a radio-frequency power amplifier. The circuit comprises an input matching network (11), a transistor (M), and an output matching network (12); a gate of the transistor (M) connected to an output end of the input matching network (11), a drain thereof connected to an input end of the output matching network (12), and a source thereof being grounded; wherein the output matching network (12) enables a lower sideband of the harmonic power amplifying circuit to work in a continuous inverse F amplification mode and an upper sideband of the harmonic power amplifying circuit to work in a continuous F amplification mode; wherein the output matching network (12) and a parasitic network of the transistor (M) form a low pass filter. By transitioning from the continuous inverse F power amplifier working mode to the continuous F power amplifier working mode, the efficiency of a continuous harmonic control power amplifier is effectively improved to be higher than 60%, a relative bandwidth is improved to be higher than 80%, and the harmonic impedance is simple to match and easy to realize.