Patent classifications
H03F2200/243
Cascode Amplifier Bias Circuits
Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.
Radio frequency amplifier circuit
A radio frequency amplifier circuit is provided. A matching circuit is configured on a radio frequency path of an input end or an output end of an amplifier. An inductance-capacitance resonance circuit and the matching circuit share an inductor included in the matching circuit to generate a corresponding resonance frequency. The matching circuit provides an input impedance or an output impedance matching two fundamental tones in a radio frequency signal at a first frequency and a second frequency. The inductance-capacitance resonance circuit provides a filtering path for filtering a signal component outside a frequency band formed by the first frequency and the second frequency in the radio frequency signal.
Source Switched Split LNA
A receiver front end amplifier capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors, and gate to ground capacitors for each leg can be used to further improve the matching performance of the invention.
Compact Architecture for Multipath Low Noise Amplifier
Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.
Amplifier system for use as high sensitivity selective receiver without frequency conversion
An amplifying system is provided for use as a high sensitivity receive booster or replacement for a low noise amplifier in a receive chain of a communication device. The amplifying system includes an amplifying circuit configured to receive an input signal having a first frequency and generate an oscillation based on the input signal, a sampling circuit coupled to the amplifying circuit and configured to terminate the oscillation based on a predetermined threshold to periodically clamp and restart the oscillation to generate a series of pulses modulated by the oscillation and by the input signal, and one or more resonant circuits coupled with the amplifying circuit and configured to establish a frequency of operation and to generate an output signal having a second frequency, the second frequency being substantially the same as the first frequency.
Advanced amplifier system for ultra-wide band RF communication
A logarithmic detector amplifying (LDA) system is provided for use as a high sensitivity receive booster or replacement for a low noise amplifier in a receive chain of a communication device. The LDA system includes an amplifying circuit configured to receive an input signal having a first frequency and generate an oscillation based on the input signal, a sampling circuit coupled to the amplifying circuit and configured to terminate the oscillation based on a predetermined threshold to periodically clamp and restart the oscillation to generate a series of pulses modulated by the oscillation and by the input signal, and one or more metamaterial (“MTM”) resonant circuits coupled in shunt with an RF path that couples the amplifying circuit in series and configured to establish a frequency of operation and a phase response to output a signal having RF frequencies with a ultra-wide bandwidth.
Amplifier system for use as high sensitivity selective receiver without frequency conversion
An amplifying system is provided for use as a high sensitivity receive booster or replacement for a low noise amplifier in a receive chain of a communication device. The amplifying system includes an amplifying circuit configured to receive an input signal having a first frequency and generate an oscillation based on the input signal, a sampling circuit coupled to the amplifying circuit and configured to terminate the oscillation based on a predetermined threshold to periodically clamp and restart the oscillation to generate a series of pulses modulated by the oscillation and by the input signal, and one or more resonant circuits coupled with the amplifying circuit and configured to establish a frequency of operation and to generate an output signal having a second frequency, the second frequency being substantially the same as the first frequency.
Source switched split LNA
A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors and gate to ground caps for each legs can be used to further improve the matching performance of the invention.
RADIO FREQUENCY AMPLIFIER CIRCUIT
A radio frequency amplifier circuit is provided. A matching circuit is configured on a radio frequency path of an input end or an output end of an amplifier. An inductance-capacitance resonance circuit and the matching circuit share an inductor included in the matching circuit to generate a corresponding resonance frequency. The matching circuit provides an input impedance or an output impedance matching two fundamental tones in a radio frequency signal at a first frequency and a second frequency. The inductance-capacitance resonance circuit provides a filtering path for filtering a signal component outside a frequency band formed by the first frequency and the second frequency in the radio frequency signal.
Millimeter wave power amplifier circuit and millimeter wave power amplifier device
A millimeter wave power amplifier device has multiple millimeter wave power amplifier circuits. Each millimeter wave power amplifier circuit includes a transistor, a first serial connection resonation unit, a second serial connection resonation unit, multiple first frequency band adjustment units and multiple second frequency band adjustment units. The transistor has a first end connected with an input end, a second end connected with a grounding end and a third end connected with an output end. Each of the first and second frequency band adjustment units has a switch member and two storage members. The switch member and the storage members of the first and second frequency band adjustment units are serially connected. The millimeter wave power amplifier device can achieve multi-frequency band adjustable effect to lower the cost.