A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, and a metal layer. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. The metal layer is disposed between the first semiconductor device and the second semiconductor device so as to overlie the first recess.

Methods and apparatuses for controlling gain of a single stage cascode FET amplifier are presented. According to one aspect, a series-connected resistor and capacitor is coupled to a gate of a cascode FET transistor of the amplifier, the capacitor providing a short at frequencies of operation of the amplifier. According to another aspect, values of the resistor can be used to control gain of the amplifier. According to yet another aspect, the resistor is a variable resistor whose value can be controlled/adjusted to provide different gains of the amplifier according to a linear function of the resistor value. An input matching network coupled to an input of the amplifier can be used to compensate for different noise figure degradations from different values of the resistor.

A hybrid diode silicon on insulator front end module and related method are provided. The front end module includes a transmit branch that includes a transmit circuit and a receive branch that includes a receive circuit. The receive circuit includes a low noise amplifier, a pin diode including an anode and a cathode; and a switch. The anode of the pin diode is operatively connected to an antenna switch port and an input voltage source. The cathode of the pin diode is operatively connected to a cathode of the switch. Turning on the switch facilitates a drainage of residual electrical current at the pin diode.

An aspect of the disclosure relates to a method of reducing a third-order intermodulation component at a first terminal of a transistor, including: receiving an input radio frequency (RF) signal cycling with a first frequency at a control terminal of the transistor; generating a feedback RF signal cycling at a second frequency at a second terminal of the transistor, wherein the second frequency is substantially twice the first frequency; and generating a third-order intermodulation cancellation component at the first terminal including combining the input RF signal with the feedback RF signal, wherein the third-order intermodulation cancellation component has a magnitude and phase substantially equal to and opposite a magnitude and phase of the third-order intermodulation component at the first terminal of the transistor, respectively.

Provided are a low noise amplifier and a receiver. The low noise amplifier comprises at least one input port configured to receive an input signal including a carrier, first to third output ports connected to first to third load circuits, respectively, and configured to transmit an output signal, a first amplifier stage comprising a first type gain stage connected to the input port and first to third first type drive stages connected to the first to third output ports, respectively and second to third amplifier stages, each comprising a second type gain stage and a second type drive stage, wherein the low noise amplifier is configured to vary an impedance of an input transistor included in each of the first type gain stage and the second type gain stage, so that an input impedance is uniform even when operating in a plurality of operation modes.

A transceiver is configured for a calibration mode of operation in which an impedance of a transmit chain is tuned responsive to a power measurement of a mixed RF calibration signal to form a tuned transmit chain. A direct conversion mixes an RF calibration signal with a DC offset signal to form the mixed calibration signal. During a normal mode of operation, a heterodyne mixer mixes an LO signal with an IF signal to produce an RF signal that is amplified through the tuned transmit chain.

Circuits and methods for generating a bypass pulse to an RF circuit that increases the response time of the circuit to mode changes. Embodiments include a pulse generation circuit that it is self-initiated and self-terminated, generating a bypass pulse as a function of voltages V1 and V2 along a signal path. Voltage V3, a scaled version of V1, is compared to a voltage V4 derived from V2 and a pulse is output while V3>V4. The pulse temporarily lowers the signal path impedance, reducing the RC time constant of the signal path and allowing fast charging of components coupled to the signal path. The pulse may be used with any other circuit that needs a faster settling time after a mode change but is slowed down by an RC time constant. Usage also extends to providing for rapid discharge of the signal path by adding additional logic components.

In certain aspects, a method is provided for measuring power using a resistive element coupled between a power amplifier and an antenna. The method includes squaring a voltage from a first terminal of the resistive element to obtain a first signal, squaring a voltage from a second terminal of the resistive element to obtain a second signal, and generating a measurement signal based on a difference between the first signal and the second signal. In some implementations, the resistive element is implemented with a power switch.

According to certain aspects, a chip includes a pad, a power amplifier, a transformer coupled between an output of the power amplifier and the pad, a transistor coupled between the transformer and a ground, and a first clamp circuit coupled between a gate of the transistor and a drain of the transistor.

The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.