A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

A circuit device includes an analog front-end circuit that receives a target signal is input, and a processing circuit that performs arithmetic processing based on an output signal from the analog front-end circuit. The analog front-end circuit includes a plurality of comparator circuits that compare the voltage level of the target signal to a plurality of threshold voltages and output a plurality of comparison result signals. The processing circuit obtains the transition timing of the target signal based on the comparison result signals and delayed-time information of the analog front-end circuit.

A system for testing a subject transistor with constant power. The system may include an amplifier, a measurement voltage source, and a exercise voltage source. The amplifier may have an output connected to a gate of the subject transistor. The amplifier may have a first input and a second input. The measurement voltage source may be connected to the first input of the amplifier for use in measuring characteristics of the subject transistor. The exercise voltage source may be connected to the first input of the amplifier for exercising the subject transistor. The second input of the amplifier may be connected to a source of the subject transistor through a resistor.

Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.

A conversion circuit for converting a current signal into a first output voltage signal, where the current signal flows through a sensing component, is provided. The conversion circuit includes: a first current eliminating circuit, configured to eliminate a first current in the current signal. The first current eliminating circuit includes: a current sample and hold circuit; and a current driving circuit, coupled between the sensing component and the current sample and hold circuit; a second current eliminating circuit, coupled to the sensing component and configured to eliminate a second current in the current signal; and an integrating circuit, coupled to the sensing component and configured to integrate a third current in the current signal, and output a first input voltage signal between a first integration output terminal and a second integration output terminal.

An operational amplifier comprises: a first amplifier stage 4 comprising a first differential pair of transistors 8, 10 arranged to receive and amplify a differential input signal 18, 20 thereby providing a first differential output signal 22, 24; and a second amplifier stage 6 comprising a second differential pair of transistors 26, 28 arranged to receive and amplify the first differential output signal 22, 24 thereby providing a second differential output signal 38, 40.

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

A line receiver comprising a switched capacitor circuit and a buffer is described. The buffer may be configured to receive, through the switched capacitor circuit, an analog signal. In response, the buffer may provide an output signal to a load, such as an analog-to-digital converter. The switched capacitor circuit may be controlled by a control circuitry, and may charge at least one capacitive element to a desired reference voltage. The reference voltage may be selected so as to bias the buffer with a desired DC current, and consequently, to provide a desired degree if linearity. The line receiver may further comprise a bias circuit configured to generate the reference voltage needed to bias the buffer with the desired DC current.

A power amplifier including: a main power amplification device having an output; an auxiliary power amplification device having an output; a load modulation circuit operably connected to the output of the main power amplification device and the output of the auxiliary power amplification device; and a post-matching circuit operably connected to load modulation circuit. The load modulation circuit is arranged to enable fundamental frequency load modulation and to enable modulated harmonic terminations of at least the second and third harmonic frequencies. The modulated harmonic terminations may include drain terminations.