Techniques for monitoring a distortion signal of a power amplifier circuit, where the output of a distortion monitoring circuit includes little or no fundamental signal and closely represents the actual distortion of the amplifier circuit of a wired communications system. The power amplifier circuit can generate a distortion feedback signal that does not affect the power amplifier's output power capability, e.g., no inherent loss in the fundamental output of the amplifier. That is, using a distortion monitor circuit, the power amplifier circuit can resolve a distortion feedback signal from the intended output signal of the output power amplifier circuit.

A radio frequency amplifier includes a transistor, an input impedance matching circuit (e.g., a single-section T-match circuit or a multiple-section bandpass circuit), and a fractional harmonic resonator circuit. The input impedance matching circuit is coupled between an amplification path input and a transistor input terminal. An input of the fractional harmonic resonator circuit is coupled to the amplification path input, and an output of fractional harmonic resonator circuit is coupled to the transistor input terminal. The fractional harmonic resonator circuit is configured to resonate at a resonant frequency that is between a fundamental frequency of operation of the RF amplifier and a second harmonic of the fundamental frequency. According to a further embodiment, the fractional harmonic resonator circuit resonates at a fraction, x, of the fundamental frequency, wherein the fraction is between about 1.25 and about 1.9 (e.g., x≈1.5).

Aspects disclosed herein eliminate audible disturbances that may occur when an audio amplifier is activated and deactivated. A feedback circuit is used to maintain a closed loop when transistors of a power output stage are activate or deactivated, thereby enabling the charge to build or dissipate without causing an audible disturbance. Further, in certain implementations, the power output stage may remain in an enable state for a period of time after deactivation of the audio amplifier regardless of whether an audio input signal is received enabling dissipation of charge without causing an audible disturbance.

A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.

Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit is an output pre-match impedance conditioning shunt circuit, which includes a first shunt inductance, a second shunt inductance, and a shunt capacitor coupled in series. The first shunt inductance comprises a plurality of bondwires coupled between the first current carrying terminal and the second shunt inductance, and the second shunt inductance comprises an integrated inductor coupled between the first shunt inductance and a first terminal of the shunt capacitor. The shunt capacitor is configured to provide capacitive harmonic control of an output of the transistor.

An amplifier with two parallel coupled amplifier units with inverse characteristics and in particular to the parallel coupling of a sourcing limited amplifier unit and a sinking limited amplifier unit.

A filter includes M filter circuits. The M filter circuits are sequentially cascaded from an input terminal to an output terminal, in order to generate an output signal according to an input signal, in which M is a positive integer greater than or equal to 2. The M filter circuits include at least one first filter circuit and at least one second filter circuit. Each of the at least one first filter circuit is set to be an active filter circuit, and each of the at least one second filter circuit is set to be a passive filter circuit.

It is disclosed an amplifier for driving a capacitive load, comprising an input terminal adapted to receive an input voltage signal, an output terminal adapted to drive the capacitive load, a linear amplification stage, switching amplification stage, a capacitor, a first switch and a measurement and control circuit. The measurement and control circuit is configured to: measure the value of the current generated at the output from the linear amplification stage and generate a driving voltage signal of the switching amplification stage; generate the first switching signal to open the first switch and generate an enabling signal to enable the operation of at least part of the switching amplification stage; generate the first switching signal to close the first switch and generate the enabling signal to disable the operation of the switching amplification stage; generate the first switching signal to open the first switch.

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

Aspects generally relate to a P.sup.N junction varactor that can be integrated with high electron mobility transistor (HEMT) in a single device or die. The varactor and HEMT are fabricated with different materials forming various layers of the varactor and HEMT. Using different material stack-up to form the varactor and HEMT allows characteristics of the varactor and HEMT to be varied for improved performance in different operating scenarios. The integrated varactor and HEMT device may be used for RF circuits, such as radio frequency front end (RFFE) devices for use in 5G.