H03F2200/301

Linear CMOS PA with low quiescent current and boosted maximum linear output power

The present disclosure relates to a power amplifier (PA) system provided in a semiconductor device and having feed forward gain control. The PA system comprises a transmit path and control circuitry. The transmit path is configured to amplify an input radio frequency (RF) signal and comprises a first tank circuit and a PA stage. The control circuitry is configured to detect a power level associated with the input RF signal and control a first bias signal provided to the PA stage based on a first function of the power level and control a quality factor (Q) of the first tank circuit based on a second function of the power level.

Quadrature combined doherty amplifiers

Apparatus and methods for quadrature combined Doherty amplifiers are provided herein. In certain embodiments, a separator is used to separate a radio frequency (RF) input signal into a plurality of input signal components that are amplified by a pair of Doherty amplifiers operating in quadrature. Additionally, a combiner is used to combine a plurality of output signal components generated by the pair of Doherty amplifiers, thereby generating an RF output signal exhibiting quadrature balancing.

CURRENT AMPLIFIER

A first transistor, a second transistor, a third transistor, and a fourth transistor, their source terminals being grounded, are provided. Further, a first feedback circuit connected between a gate terminal and a drain terminal in the first transistor, and having first impedance, a second feedback circuit connected between a gate terminal and a drain terminal in the second transistor, and having the first impedance, a current source for outputting a current, a first load circuit connected between the drain terminal of the first transistor and a first output terminal of the current source, and having second impedance, and a second load circuit connected between the drain terminal of the second transistor and a second output terminal of the current source, and having the second impedance are provided.

RF DAMPING STRUCTURE IN INDUCTIVE DEVICE
20200020474 · 2020-01-16 ·

A spiral inductor includes a spiral trace and a plurality of first projections extending along a first edge of the spiral trace. The spiral inductor may further include a plurality of second projections extending along a second edge of the spiral trace, the second edge being opposite the first edge.

Matrix power amplifier

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

Generation and synchronization of pulse-width modulated (PWM) waveforms for radio-frequency (RF) applications

Described are concepts, systems, circuits and techniques directed toward methods and apparatus for generating one or more pulse width modulated (PWM) waveforms with the ability to dynamically control pulse width and phase with respect to a reference signal.

Current detection circuit

A current detection circuit has a differential amplification circuit that outputs a differential output current dependent on a voltage difference between input terminals and first and second feedback circuits that output a detection current in response to the differential output current and form a feedback path to each input terminal of the differential amplification circuit. First and second MOS transistors that generate voltages dependent on respective source-drain voltages at a time when drain currents in a forward direction and a backward direction flow through an output MOS transistor are connected to respective input terminals of the differential amplification circuit.

WIDEBAND LOW NOISE AMPLIFIER (LNA) WITH A RECONFIGURABLE BANDWIDTH FOR MILLIMETER-WAVE 5G COMMUNICATION
20190372533 · 2019-12-05 ·

According to one embodiment, a low noise amplifier (LNA) circuit includes a first stage which includes: a first transistor; a second transistor coupled to the first transistor; a first inductor coupled in between an input port and a gate of the first transistor; and a second inductor coupled to a source of the first transistor, where the first inductor and the second inductor resonates with a gate capacitance of the first transistor for a dual-resonance. The LNA circuit includes a second stage including a third transistor; a fourth transistor coupled between the third transistor and an output port; and a passive network coupled to a gate of the third transistor. The LNA circuit includes a capacitor coupled in between the first and the second stages, where the capacitor transforms an impedance of the passive network to an optimal load for the first amplifier stage.

Source switched split LNA
10491164 · 2019-11-26 · ·

A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a common source configured input FET and a common gate configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

RF Power Amplifier with Frequency Selective Impedance Matching Network

An amplifier circuit includes an input port, an output port, and a reference potential port, an RF amplifier device having an input terminal electrically coupled to the input port, an output terminal electrically coupled to the output port, and a reference potential terminal electrically coupled to the reference potential port. An impedance matching network is electrically connected to the output terminal, the reference potential port, and the output port. The impedance matching network includes a reactive efficiency optimization circuit that forms a parallel resonant circuit with a characteristic output impedance of the peaking amplifier at a center frequency of the fundamental frequency range. The impedance matching network includes a reactive frequency selective circuit that negates a phase shift of the RF signal in phase at the center frequency and exhibits a linear transfer characteristic in a baseband frequency range.