Power amplifier apparatuses and techniques for optimizing the design of power amplifiers are disclosed. In one aspect, a method for optimizing a power amplifier includes selecting a circuit topology for the power amplifier. The circuit topology includes one or more photoconductive switches and an impedance matching network including one or more parameter values representative of the impedance matching network or the photoconductive switches that can be adjusted. The method further includes selecting one or more optimization goals for the impedance matching network and the one or more photoconductive switches, and adjusting the one or more parameter values according to the one or more optimization goals. The one or more optimization goals include an efficiency at a particular power output.

A power amplifier system includes: a drive stage configured to amplify an RF input signal and implemented in a substrate containing silicon; a power stage including a carrier amplifier configured to amplify a base signal from the RF input signal as amplified by the drive stage, and a peaking amplifier configured to amplify a peak signal from the RF input signal as amplified by the drive stage, the power stage being implemented in a substrate containing gallium arsenide; and a phase compensation circuit configured to change a phase of the RF input signal, wherein either the carrier amplifier or the peaking amplifier is connected to the phase compensation circuit.

A load detection circuit includes a first detection part and a second detection part. The first detection part includes a first capacitor and a second capacitor, forms capacitive coupling with a signal transmission line connecting an output port of an RF amplifier and a load, and outputs a first signal. The second detection part includes a first inductor and a second inductor, forms inductive coupling with the signal transmission line, and outputs a second signal.

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

Methods and devices to implement efficiently an AUX terminal in RF front end receivers using LNAs are described. The described methods implement a smaller number of switches resulting in an overall performance improvement by reducing the noise figure at the input of the LNA. The presented devices can be used in low/high gain and bypass modes and can accommodate an arbitrary number of bands over a wide frequency range.

A load-insensitive power amplifier power detector that excludes the use of couplers is disclosed. The load-insensitive power amplifier power detector may include a voltage sampling circuit in electrical communication with a collector of a power amplifier and configured to sample a first voltage from the power amplifier. The load-insensitive power amplifier power detector may include a current sampling circuit in electrical communication with the collector of the power amplifier and configured to sample an output current from the power amplifier. Further, the load-insensitive power amplifier power detector may include a current-to-voltage converter connected between the voltage sampling circuit and an output of the load-insensitive power amplifier power detector. The current-to-voltage converter may be configured to convert the output current to obtain a second voltage. Moreover, a combination of the first voltage and the second voltage may form a detector voltage corresponding to an incident power of the power amplifier.

A front-end module of a wireless device can replace a passive duplexer with an active duplexer that uses metamaterial matching circuits. The active duplexer can be formed from a power amplifier circuit and a low noise amplifier circuit that each include a metamaterial matching circuit. The combination of a power amplifier circuit and a low noise amplifier circuit that each utilize metamaterials to form the associated matching circuit can provide the functionality of a duplexer without including the additional circuitry of a stand-alone or passive duplexer. Thus, in certain cases, the front-end module can provide duplexer functionality without including a separate duplexer. Advantageously, in certain cases, the size of the front-end module can be reduced by eliminating the passive duplexer. Further, the loss introduced into the signal path by the passive duplexer is eliminated improving the performance of the communication system that includes the active duplexer.

A power control device includes: a controller configured to, when a frequency band selection instruction is detected, determine a target frequency band from the frequency band selection instruction in response to the frequency band selection instruction; and to determine, based on the target frequency band, a target inter-stage matching circuit of a path from a plurality of inter-stage matching circuits; a driving element configured to, when an input power signal within the target frequency band is received, pre-amplify the input power signal to obtain a pre-amplified power signal and transmit the pre-amplified power signal to the target inter-stage matching circuit; the target inter-stage matching circuit configured to process the pre-amplified power signal to obtain an intermediate input signal and provide the intermediate input signal to a power stage amplification circuit; the power stage amplification circuit configured to amplify the intermediate input signal to obtain an output power signal.

The present disclosure describes systems and devices for gain slope equalization in a radio frequency (RF) amplifier (200). The RF amplifier (200) may include an input stage (210) for receiving an RF signal. In conjunction with the input stage (210), the RF amplifier (200) may incorporate an amplification stage (215) to amplify the RF signal. Coupled with the amplification stage (215) may be a transformer (220) including a first winding to receive the amplified RF signal, a second winding providing an RF output signal, and a resonator including a third winding that is coupled to the first and second windings. The resonator may be coupled to a circuit network which may be tuned to affect the resonance frequency and the gain slope of the RF output signal.

Apparatus and methods for biasing power amplifiers are provided herein. In certain embodiments, a power amplifier includes a bipolar transistor having a base biased by a bias network having a reactance that controls an impedance at the transistor base to achieve substantially flat phase response over large dynamic power levels. For example, the bias network can have a frequency response, such as a high-pass or band-pass response, that reduces the impact of power level on phase distortion (AM/PM).