A power combiner circuit comprises a network topology for broadband RF and microwave systems that includes coupling elements, internodal matching sections, and an output matching section. The network topology serves as a combining mechanism for power from multiple power amplifiers. The network topology is designed so that characteristic impedances of transmissions lines serving as the coupling elements, internodal matching sections, and an output matching section produce a load impedance at an output port that is matched to the impedances seen by each power amplifier providing power to the power combiner circuit. Such a network topology is scalable to an unlimited number of power amplifiers, and enables a desired broadband frequency response for power amplification, while realizing a very low level of power output loss between input and output ports.

A matching circuit includes an input terminal, an output terminal, a first impedance component, a first set of switching devices, a second impedance component, a second set of switching devices and a controller. The first impedance component includes a first terminal coupled between the input terminal and the output terminal, and a second terminal. The first set of switching devices is coupled to the second terminal of the first impedance component, the controller and a reference terminal. The second impedance component includes a first terminal coupled between the second terminal of the first impedance component and the first set of switching devices, and a second terminal. The second set of switching devices is coupled to the second terminal of the second impedance component, the controller and the reference terminal. The controller controls the first set of switch devices and the second set of switch devices according to a detection signal.

A semiconductor device has a semiconductor substrate, and multiple first bipolar transistors on the first primary surface side of the semiconductor substrate. The first bipolar transistors have a first height between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. The semiconductor device further has at least one second bipolar transistor on the first primary surface side of the semiconductor substrate. The second bipolar transistor have a second height, greater than the first height, between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. Also, the semiconductor has a first bump stretching over the multiple first bipolar transistors and the at least one second bipolar transistor.

A power amplifier includes an active device and an output matching circuit operably connected with the active device. The output matching circuit includes a bandpass impedance transformer, in particular, a multimode bandpass impedance transformer. The multimode bandpass impedance transformer may include a multimode resonator and coupling feed lines.

Examples of the disclosure include an amplifier system comprising an amplifier having an input to receive an input signal, and an output to provide an amplified output signal, the amplifier having a power level indicative of at least one of the input signal power and the amplified output signal power, and a linearizer coupled to the amplifier and having a plurality of modes of operation including a fully disabled mode and a fully enabled mode, the linearizer being configured to determine the power level of the amplifier, select a mode of operation of the plurality of modes of operation based on the power level of the amplifier, determine one or more linearization parameters corresponding to the selected mode of operation, and control linearization of the amplified output signal based on the determined one or more linearization parameters.

A multi-stage amplifier includes a first stage comprising a first common-source amplifier, a first inductive load network comprising a serial connection of a first load resistor and a first load inductor, and a first source network configured to receive a first signal and output a first load signal, and a first inter-stage inductor configured to couple the first load signal to a second signal; and a second stage comprising a second common-source amplifier, a second inductive load network comprising a serial connection of a second load resistor and a second load inductor, and a second source network configured to receive the second signal and output a second load signal, and a second inter-stage inductor configured to couple the second load signal to a third signal, wherein the first load inductor and the second load inductor are laid out to enhance an inter-stage inductive coupling.

A matching circuit includes: a first wire having one end connected to a first terminal and another end; a second wire having one end connected to the other end of the first wire and another end connected to a first reference potential and electromagnetically coupled to the first wire; and a third wire having one end connected to the one end of the second wire and another end connected to a second terminal and electromagnetically coupled to at least one of the first wire and the second wire.

A power amplifier according to some embodiments includes a submount, a monolithic microwave integrated circuit (MMIC) die on the submount, the MMIC die including an RF transistor configured to operate at frequencies greater than 26.5 GHz, and an internal decoupling capacitor on the submount and connected to a drain of the RF transistor. The internal decoupling capacitor has a capacitance greater than 2 nF.

The present disclosure describes systems and devices for gain slope equalization in a radio frequency (RF) amplifier. The RF amplifier may include an input stage for receiving an RF signal. In conjunction with the input stage, the RF amplifier may incorporate an amplification stage to amplify the RF signal. Coupled with the amplification stage may be a transformer including a first winding to receive the amplified RF signal, a second winding providing an RF output signal, and a resonator including a third winding that is coupled to the first and second windings. The resonator may be coupled to a circuit network which may be tuned to affect the resonance frequency and the gain slope of the RF output signal.

A power amplifying module includes a first input terminal, a second input terminal, a first power amplifier, a stage matching circuit, a bypass line, and a second power amplifier. The first input terminal receives a first input signal in a first operation mode. The second input terminal receives a second input signal in a second operation mode which is different from the first operation mode. The first power amplifier amplifies the first input signal and outputs a first amplified signal. The stage matching circuit is disposed downstream of the first power amplifier and receives the first amplified signal. The bypass line outputs the second input signal to the inside of the stage matching circuit not through the first power amplifier. The second power amplifier is disposed downstream of the stage matching circuit, and amplifies the first amplified signal or the second input signal and outputs a second amplified signal.