A multiple-stage amplifier includes a driver stage die and a final stage die. The driver stage die includes a first type of semiconductor substrate (e.g., a silicon substrate), a first transistor, and an integrated portion of an interstage impedance matching circuit. A control terminal of the first transistor is electrically coupled to an RF signal input terminal of the driver stage die, and the integrated portion of the interstage impedance matching circuit is electrically coupled between a current-carrying terminal of the first transistor and an RF signal output terminal of the driver stage die. The second die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a second transistor. A connection, which is a non-integrated portion of the interstage impedance matching circuit, is electrically coupled between the RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die.

Provided are an output matching circuit and a power amplifier comprised thereof. The output matching circuit comprises an impedance transformation component and a first matching component connected to the input end of the impedance transformation component to establish matching. The first matching circuit comprises an impedance element and a controllable switch element whose on/off is controlled by an external control signal to form different impedances. The output matching circuit realizes the reconstruction of the output stage matching circuit and the switching of the output operating frequency band. It can be used for high frequency/medium frequency/low frequency, which reduces the cost, the number of components, and the design difficulty, and is easy to be integrated. It can be used for multi-band multiplexing power amplifiers. The wide-band amplifier is realized, the number of components and material cost are reduced, and the system integration degree of the power amplifier is increased.

A multiple-path amplifier (e.g., a Doherty amplifier) includes a semiconductor die, a radio frequency (RF) signal input terminal, a combining node structure integrally formed with the semiconductor die, and first and second amplifiers (e.g., main and peaking amplifiers) integrally formed with the die. Inputs of the first and second amplifiers are electrically coupled to the RF signal input terminal. A plurality of wirebonds is connected between an output of the first amplifier and the combining node structure. An output of the second amplifier is electrically coupled to the combining node structure (e.g., through a conductive path with a negligible phase delay). A phase delay between the outputs of the first and second amplifiers is substantially equal to 90 degrees. The second amplifier may be divided into two amplifier portions that are physically located on opposite sides of the first amplifier.

A power amplifier includes initial-stage and output-stage amplifier circuits, and initial-stage and output-stage bias circuits. The initial-stage amplifier circuit includes a first high electron mobility transistor having a source electrically connected to a reference potential, and a gate to which a radio-frequency input signal is inputted, and a first heterojunction bipolar transistor having an emitter electrically connected to a drain of the first high electron mobility transistor, a base electrically connected to the reference potential in an alternate-current fashion, and a collector to which direct-current power is supplied and from which a radio-frequency signal is outputted. The output-stage amplifier circuit includes a second heterojunction bipolar transistor having an emitter electrically connected to the reference potential, a base to which the radio-frequency signal outputted from the first heterojunction bipolar transistor is inputted, and a collector to which direct-current power is supplied and from which a radio-frequency output signal is outputted.

A temperature compensation circuit for a power amplifier is provided, wherein data of circuit configurations corresponding to specific temperatures (including data associated with an output terminal voltage, a bias voltage, an adaptive bias, and a matching impedance of the power amplifier) for the power amplifier is stored in a read-only memory. Therefore, the temperature compensation circuit is capable of reading the data according to a temperature sensing signal to adjust the circuit configuration of the power amplifier accordingly, thereby, in a case of a constant input power of the power amplifier, an output power variance of the power amplifier is within a second interval (e.g., −10%˜+10%) when an environment temperature varies within a first interval. Therefore, the power amplifier has a stable gain.

A power amplifier system includes: a base substrate; a driver stage configured to receive and amplify an RF input signal, wherein the driver stage is disposed within the base substrate and is implemented in a first substrate; and a power stage configured to receive the RF input signal amplified by the driver stage and amplify the RF input signal amplified by the driver stage, wherein the power stage is disposed outside the base substrate and is implemented in a second substrate independent from the first substrate.

A front-end module of a wireless device can replace a passive duplexer with an active duplexer that uses metamaterial matching circuits. The active duplexer can be formed from a power amplifier circuit and a low noise amplifier circuit that each include a metamaterial matching circuit. The combination of a power amplifier circuit and a low noise amplifier circuit that each utilize metamaterials to form the associated matching circuit can provide the functionality of a duplexer without including the additional circuitry of a stand-alone or passive duplexer. Thus, in certain cases, the front-end module can provide duplexer functionality without including a separate duplexer. Advantageously, in certain cases, the size of the front-end module can be reduced by eliminating the passive duplexer. Further, the loss introduced into the signal path by the passive duplexer is eliminated improving the performance of the communication system that includes the active duplexer.

A power amplifier system includes: a drive stage configured to amplify an RF input signal and implemented in a substrate containing silicon; a power stage including a carrier amplifier configured to amplify a base signal from the RF input signal as amplified by the drive stage, and a peaking amplifier configured to amplify a peak signal from the RF input signal as amplified by the drive stage, the power stage being implemented in a substrate containing gallium arsenide; and a phase compensation circuit configured to change a phase of the RF input signal, wherein either the carrier amplifier or the peaking amplifier is connected to the phase compensation circuit.

A power amplification circuit includes first wiring supplied with a first signal having a first frequency, second wiring supplied with a second signal having a second frequency that differs from the first frequency, a first amplification circuit that amplifies the first signal supplied through the first wiring and supplies a first amplified signal to the second wiring, and a second amplification circuit that amplifies the signal supplied through the second wiring and outputs a second amplified signal.

The present disclosure relates to an RF amplifier device including an IC chip including at least one transistor formed on a substrate, at least one operational circuit formed on the substrate and electrically coupled to the transistor, and a port configured to electrically couple the at least one operational circuit with operational circuitry outside the IC chip to adjust operation of the operational circuitry.