A semiconductor device includes the following elements. A chip has a main surface substantially parallel with a plane defined by first and second directions intersecting with each other. A power amplifier amplifies an input signal and outputs an amplified signal from plural output terminals. First and second filter circuits attenuate harmonics of the amplified signal. The first filter circuit includes a first capacitor connected between the plural output terminals and a ground. The second filter circuit includes a second capacitor connected between the plural output terminals and a ground. On the main surface of the chip, the plural output terminals are disposed side by side in the first direction, and the first capacitor is disposed on a side in the first direction with respect to the plural output terminals, while the second capacitor is disposed on a side opposite the first direction with respect to the plural output terminals.

The present disclosure provides a power amplifier and an electrical device. The two-stage power amplifier architecture is tuned staggered before power combining. A previous stage matching network and its input matching are split into a cascaded staggered tuning, such that the center frequency is at frequency point 1 less than the design frequency point and frequency point 2 greater than design frequency point, and then the power combining stage is tuned at the design frequency point. At advanced process nodes (such as 65 nm or below), compared with the known architecture, in-band signal quality and out-of-band filtering effect of the power amplifier chip integrating this architecture will be better when using the same number of transformers (same area), the reliability will be better. Due to its good flatness within the band, this architecture is especially suitable for carrier aggregation communication occasions.

An electronic circuit comprises an input stage, a gain stage operatively coupled to the input stage, a primary output stage operatively coupled to the gain stage, a replica output stage operatively coupled to the gain stage in parallel to the primary output stage, and a clock circuit. The clock circuit operates the electronic circuit in multiple phases including a sampling phase to disconnect the primary output stage and the replica output stage from the gain stage to obtain an offset voltage, an active phase to reconnect the primary output stage to apply the offset voltage to reduce an offset at the primary output stage, and an intermediate phase to first reconnect the replica output stage to the gain stage prior to the active phase.

A power amplifier (PA) system is provided for multi-mode multi-band operations. The PA system includes one or more amplifying modules, each amplifying module including one or more banks, each bank comprising one or more transistors; and a plurality of matching modules, each matching module being configured to be adjusted to provide impedances corresponding to frequency bands and conditions. A controller dynamically controls an input terminal of each bank and adjusts the matching modules to provide a signal path to meet specifications on properties associated with signals during each time interval.

A transistor includes an active region bounded by an outer periphery and formed in a substrate. The active region includes sets of input fingers, output fingers, and common fingers disposed within the substrate and oriented substantially parallel to one another. The transistor further includes an input port, an output port, a first via connection disposed at the outer periphery of the active region proximate the input port and a second via connection disposed at the outer periphery of the active region proximate the output port. The second via connection has a noncircular cross-section with a second major axis and a second minor axis, the second major axis having a second major axis length, the second minor axis having a second minor axis length that is less than the second major axis length. The second major axis is oriented parallel to a longitudinal dimension of the input, output, and common fingers.

A transistor includes an active region bounded by an outer periphery and formed in a substrate. The active region includes sets of input fingers, output fingers, and common fingers disposed within the substrate and oriented substantially parallel to one another. The transistor further includes an input port, an output port, a first via connection disposed at the outer periphery of the active region proximate the input port and a second via connection disposed at the outer periphery of the active region proximate the output port. The second via connection has a noncircular cross-section with a second major axis and a second minor axis, the second major axis having a second major axis length, the second minor axis having a second minor axis length that is less than the second major axis length. The second major axis is oriented parallel to a longitudinal dimension of the input, output, and common fingers.

A power amplifier circuit includes a first transistor that amplifies an RF signal; a bias current source that supplies a bias current to a second terminal of the first transistor through a first current path; and an adjustment circuit that adjusts the bias current in accordance with a variable power-supply voltage supplied from a power-supply terminal. The adjustment circuit includes first to third resistors, and an adjustment transistor including a first terminal connected to the power-supply terminal through the first resistor, a second terminal connected to the bias current source through the second resistor, and a third terminal connected to the first current path through the third resistor. When the variable power-supply voltage is not less than a first voltage and not greater than a third voltage, the adjustment circuit increases a current that flows to the power-supply terminal through a second current path as the variable power-supply voltage decreases.

Provided is a power amplification module that includes: a first amplification circuit that amplifies a first signal and outputs the amplified first signal as a second signal; a second amplification circuit that amplifies the second signal and outputs the amplified second signal as a third signal; and a feedback circuit that re-inputs/feeds back the second signal outputted from the first amplification circuit to the first amplification circuit as the first signal. The operation of the first amplification circuit is halted and the first signal passes through the feedback circuit and is outputted as the second signal at the time of a low power output mode.

A power amplifying circuit includes a first amplifying unit that amplifies a first radio-frequency signal and a second amplifying unit that amplifies a second radio-frequency signal. The first amplifying unit includes a first matching circuit that performs impedance matching for a circuit in a preceding stage, and a first amplifying circuit that amplifies the first radio-frequency signal that has passed through the first matching circuit. The second amplifying unit includes a second matching circuit that performs impedance matching for the circuit in the preceding stage, a resistor including a first end and a second end, the first end being electrically connected to the second matching circuit, and a second amplifying circuit that is electrically connected to the second end of the resistor and that amplifies the second radio-frequency signal that has passed through the resistor.

An amplifier circuit includes a driver amplifier implemented on a silicon-on-insulator (SOI) substrate and configured to amplify a radio frequency (RF) signal, a bypass circuit implemented on the SOI substrate and configured to selectively bypass the driver amplifier, an output coupled to the driver amplifier and the bypass circuit, an interconnect configured to couple the output to a gallium arsenide (GaAs) substrate, and a power amplifier implemented on the GaAs substrate and configured to amplify a signal received over the interconnect from the output.