A bump-equipped electronic component includes a circuit substrate and first and second bumps which are disposed on a principal surface of the circuit substrate and have different cross-sectional areas in a direction parallel or substantially parallel to the principal surface. One of the first and second bumps having a smaller cross-sectional area includes a height adjustment layer disposed in a direction perpendicular or substantially perpendicular to the principal surface.

A power amplifier is described. A power amplifier includes at least a first amplifier stage. The power amplifier also includes a first notch filter coupled with the first amplifier stage. The first notch filter is configured to tune to a first frequency. The first notch filter including at least one first set of metal oxide semiconductor variable capacitor arrays. Moreover, the power amplifier includes a first mirrored notch filter coupled with said first amplifier stage. The first mirror notch filter is configured to tune to the mirror of the first frequency. The first mirror notch filter including at least one second set of metal oxide semiconductor variable capacitor arrays.

A power amplification module includes a first input terminal that receives a first transmit signal in a first frequency band, a second input terminal that receives a second transmit signal in a second frequency band having a narrower transmit/receive frequency interval than the first frequency band, a first amplification circuit that receives and amplifies the first transmit signal to produce a first amplified signal and outputs the first amplified signal, a second amplification circuit that receives and amplifies the second transmit signal to produce a second amplified signal and outputs the second amplified signal, a third amplification circuit that receives and amplifies the first or second amplified signal to produce an output signal and outputs the output signal, and an attenuation circuit located between the second input terminal and the second amplification circuit and configured to attenuate a receive frequency band component of the second frequency band.

A radio frequency amplifier circuit has a signal input and a signal output. A primary amplifier is connected to the signal input and the signal output. A low dropout voltage regulator is connectible to an external power supply and to the primary amplifier, and generates a set voltage to bias the primary amplifier from a variable voltage provided by the external power supply. An equivalent capacitance circuit is connected to the primary amplifier and to the low dropout voltage regulator. The equivalent capacitance circuit defines a low dropout voltage regulator output capacitance in a nano-Farad to micro-Farad range absent any passive capacitor components corresponding thereto to maintain linearity of the primary amplifier.

The embodiments described herein provide class F amplifiers and methods of operation. So implemented, the class F amplifiers can be used to provide high efficiency amplification for a variety of applications, including radio frequency (RF) applications. In general, the class F amplifiers are implemented with at least one transistor and an output matching network, where the output matching network includes a plurality of resonant circuits configured to facilitate class F amplifier operation. In addition to facilitating class F amplifier operation, the plurality of resonant circuits can also be implemented with other circuit elements to provide output impedance transformation in a way that facilitates efficient amplifier operation.

The present disclosure is to improve the power added efficiency of a power amplifier at high output power. The power amplifier includes: a first capacitor with a radio frequency signal input to one end thereof; a first transistor whose base is connected to the other end of the first capacitor to amplify the radio frequency signal; a bias circuit for supplying bias to the base of the first transistor; and a second capacitor with one end connected to the base of the first transistor and the other end connected to the emitter of the first transistor.

Methods and devices addressing design of wideband LNAs with gain modes are disclosed. The disclosed teachings can be used to reconfigure RF receiver front-end to operate in various applications imposing stringent and conflicting requirements. Wideband and narrowband input and output matching with gain modes using a combination of the same hardware and a switching network are also disclosed. The described methods and devices also address carrier aggregation requirements and provide solutions that can be used both in single-mode and split-mode operations.

An amplifier device includes a first input terminal, a second input terminal, a first transistor having a first control electrode and first and second current-carrying electrodes, wherein the first control electrode is radio frequency (RF) coupled to the first input terminal and DC-coupled to a first bias network electrically coupled to the first control electrode, wherein the first bias network is configured to apply a first direct current (DC) bias to the first control electrode and is RF-isolated from the first control electrode. The amplifier device further includes a second transistor that includes a second control electrode that is RF coupled to the second input terminal and a second bias network electrically coupled to the second transistor, wherein the second bias network is configured to apply a second DC bias to the second transistor and is RF-isolated from the second transistor.

A system improve amplifier efficiency of operation relative to that of an amplifier with fixed biasing is operating channel dependent. A control circuit determines a bias current for an amplifying transistor of an amplifier circuit based at least in part on an operating channel. The amplifying transistor operates in a multi-channel system, where the bias current for the amplifying transistor operating at channels at an edge of a channel band is different from the bias current for the amplifying transistor operating at channels nearer a center of the channel band.

A radio-frequency (RF) module includes a first transistor having a base, a collector, and an emitter, a radio-frequency output transmit path coupled to the collector of the first transistor at a first end and to a radio-frequency output port at a second end, and an output matching network disposed in the radio-frequency output transmit path, the output matching network including a shunt arm coupled to ground, the shunt arm including a switch that is controllable to modify an impedance of the output matching network.