A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

Disclosed is an amplifier circuit comprising a first stage having first and second input terminals, a second stage configured to amplify a voltage supplied from the first stage and including a pull-up node and a pull-down node, a third stage including an output terminal, a tenth PMOS transistor, and a tenth NMOS transistors having gate electrodes respectively connected to the pull-up node and the pull-down node of the second stage, the third stage configured to perform a pull-up driving and pull-down driving of the amplified voltage, a first boosting circuit including an eleventh PMOS transistor having a gate electrode connected to the pull-up node and the first boosting circuit configured to increase a current in the first stage, and a second boosting circuit including an eleventh NMOS transistor having a gate electrode connected to the pull-down node and configured to increase the current in the first stage.

A high-frequency amplifier module includes a semiconductor substrate and an insulating substrate. The semiconductor substrate includes multiple emitter electrodes, each of which is coupled to the emitter of a corresponding one of high-frequency amplifying transistors. The insulating substrate includes a common ground electrode, ground terminal electrodes, and thickness-direction coupling electrodes. The common ground electrode is formed on or near the front surface of the insulating substrate, and is joined to the emitter electrodes. The ground terminal electrodes are formed on the back surface of the insulating substrate. The thickness-direction coupling electrodes couple the common ground electrode to the ground terminal electrodes.

A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

An audio amplifier circuit for driving an electro-acoustic transducer, which is bridged transless (BTL)-connected to the audio amplifier circuit, in a filterless manner, including: a class D amplifier including a high side transistor and a low side transistor; a high side driver configured to drive the high side transistor; and a low side driver configured to drive the low side transistor, as a pair, wherein the low side driver is configured so that a time for turning off the low side transistor by the low side driver is longer than that for turning off the high side transistor by the high side driver.

Methods and systems are described for receiving, at an input differential branch pair, a set of input signals, and responsively generating a first differential current, receiving, at an input of an offset voltage branch pair, an offset voltage control signal, and responsively generating a second differential current, supplementing a high-frequency component of the second differential current by injecting a high-pass filtered version of the set of input signals into the input of the offset voltage branch pair using a high-pass filter, and generating an output differential current based on the first and second differential currents using an amplifier stage connected to the input differential branch pair and the offset voltage branch pair.

Apparatus and methods for oscillation suppression of cascode power amplifiers are provided herein. In certain implementations, a power amplifier system includes a cascode power amplifier including a plurality of transconductance devices that operate in combination with a plurality of cascode devices to amplify a radio frequency input signal. The power amplifier system further includes a bias circuit that biases the plurality of cascode devices with two or more bias voltages that are decoupled from one another at radio frequency to thereby inhibit the cascode power amplifier from oscillating.

A power amplifier includes an amplifying circuit configured to amplify an input signal and comprising transistors, which may be disposed in parallel with one another and divided into a first group of transistors and a second group of transistors. The power amplifier also includes a bias circuit configured to supply bias power to one of the transistors of the first group and the transistors of the second group.

A dual operating mode power amplifying apparatus, includes a power amplifying circuit configured to comprise a unit amplifier amplifying an input signal; a first bias circuit configured to generate a first bias current of the power amplifying circuit; a second bias circuit configured to generate a second bias current of the power amplifying circuit, the second bias current being a signal independent of the first bias current; a first ballast circuit connected between the first bias circuit and the power amplifying circuit, and configured to transfer the first bias current to the power amplifying circuit; and a second ballast circuit connected between the second bias circuit and the power amplifying circuit, and configured to transfer the second bias current to the power amplifying circuit.

Disclosed is an amplifier circuit comprising a first stage having first and second input terminals, a second stage configured to amplify a voltage supplied from the first stage and including a pull-up node and a pull-down node, a third stage including an output terminal, a tenth PMOS transistor, and a tenth NMOS transistors having gate electrodes respectively connected to the pull-up node and the pull-down node of the second stage, the third stage configured to perform a pull-up driving and pull-down driving of the amplified voltage, a first boosting circuit including an eleventh PMOS transistor having a gate electrode connected to the pull-up node and the first boosting circuit configured to increase a current in the first stage, and a second boosting circuit including an eleventh NMOS transistor having a gate electrode connected to the pull-down node and configured to increase the current in the first stage.