A receiving circuit may include a first amplifying circuit, a second amplifying circuit, a third amplifying circuit, and a feedback circuit. The first amplifying circuit amplifies a first input signal and a second input signal to generate a first amplified signal and a second amplified signal, respectively. The second amplifying circuit amplifies the first amplified signal and the second amplified signal to generate a first preliminary output signal and a second preliminary output signal, respectively. The third amplifying circuit amplifies the first preliminary output signal and the second preliminary output signal to generate a first output signal and a second output signal, respectively. The feedback circuit changes voltage levels of the first amplified signal and the second amplified signal based on a current control signal, the first output signal, and the second output signal.

It is described a charge preamplifier device (100) integrated in a chip (200) of semiconductive material comprising: an input (IN) for an input signal (i.sub.IN) and an output (OUT) for an output signal (v.sub.OUT); a substrate (202) of semiconductive material doped according to a first type of conductivity; an electrically insulating layer (204) placed on said substrate (202); a feedback capacitor (C.sub.f) integrated in the chip (200) and comprising a first electrode (3) connected to the input (IN) and a second electrode (2) connected to the output (OUT). The second electrode (2) is formed by a doped conductive region (205) having a second type of conductivity, opposite to the first type of conductivity, and integrated in the substrate (202) in order to face the first electrode (3).

A receiver front end (300) having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch (235) is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch (260) is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

Aspects of the present disclosure provide a circuit configured to adjust an input impedance of an amplifier such as a low-noise amplifier. In certain aspects, the circuit is coupled to a node, wherein the node is between a first transistor and a second transistor of the amplifier. The circuit may include an inductor and a capacitor coupled in series, wherein the inductor is coupled with one or more load inductors of the amplifier through negative magnetic coupling.

Methods and devices for reducing gate node instability of a differential cascode amplifier are presented. Ground return loops, and therefore corresponding parasitic inductances, are eliminated by using voltage symmetry at nodes of two cascode amplification legs of the differential cascode amplifier. Series connected capacitors are coupled between gate nodes of pairs of cascode amplifiers of the two cascode amplification legs so to create a common node connecting the two capacitors. In order to reduce peak to peak voltage variation at the common node under large signal conditions, a shunting capacitor is connected to the common node.

Provided are a semiconductor device and a sensor system capable of achieving improvement of noise resistance. Thus, an output circuit 106a in the semiconductor device includes: input terminals 207n, 207p; and an output terminal 208; an output amplifier 201 connecting the input terminals 207n, 207p to the output terminal 208; a feedback element 203 returning the output terminal 208 to the input terminal 207n; a switching transistor 204; and a resistance element 206. A drain of the switching transistor 204 is connected to the input terminal 207n. The resistance element 206 is provided between a back gate of the switching transistor 204 and a power source Vdd and has impedance of a predetermined value or more for suppressing noise of a predetermined frequency generated at the input terminal 207n.

A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

A radio frequency circuit includes a transmit power amplifier, a differential transmit signal path having first and second paths, and first and second baluns. The first balun can be configured to convert a single ended transmit signal into a differential transmit signal, and the second balun can be configured to convert the differential transmit signal back to a single ended transmit signal. The circuit can also include a pair of transmit filters between the first and second baluns and including a first transmit filter connected in the first path and a second transmit filter connected in the second path. The second balun cancels harmonic noise generated by the pair of transmit filters.

A differential input stage of a circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. Drains of the first and third transistors couple together at a first node, and drains of the second and fourth transistors couple together at a second node. A first slew boost circuit includes a fifth transistor and a first current mirror. A gate of the fifth transistor couples to the second node. A source of the fifth transistor couples to the first node. The first current mirror couples to the fifth transistor and to the second node. A second slew boost circuit includes a sixth transistor and a second current mirror. A gate of the sixth transistor couples to the first node. A source of the sixth transistor couples to the second node. The second current mirror couples to the sixth transistor and to the first node.

A conversion circuit for converting a current signal into a first output voltage signal, where the current signal flows through a sensing component, is provided. The conversion circuit includes: a first current eliminating circuit, configured to eliminate a first current in the current signal. The first current eliminating circuit includes: a current sample and hold circuit; and a current driving circuit, coupled between the sensing component and the current sample and hold circuit; a second current eliminating circuit, coupled to the sensing component and configured to eliminate a second current in the current signal; and an integrating circuit, coupled to the sensing component and configured to integrate a third current in the current signal, and output a first input voltage signal between a first integration output terminal and a second integration output terminal.