In some implementations, there is provided an apparatus comprising a resonant amplifier circuit including a first inductor having a first inductive input and a first inductive output; a second inductor having a second inductive input and a second inductive output; a first switch coupled to the first inductive output; and a second switch coupled to the second inductive output, wherein the first switch and the second switched are driven out of phase, wherein the first inductor is configured to be resonant with a first capacitance associated with the first switch, and wherein the second inductor is configured to be resonant with a second capacitance associated with the second switch. Related systems and articles of manufacture are also provided.

A Doherty amplifier includes: a first amplifier to amplify a first signal as an auxiliary amplifier in a case where a frequency of each of the first signal and a second signal is a first frequency, and amplify the first signal as a main amplifier in a case where the frequency of each of the first signal and the second signal is a second frequency; a second amplifier to amplify the second signal as a main amplifier in a case where the frequency of each of the first signal and the second signal is the first frequency, and amplify the second signal as an auxiliary amplifier in a case where the frequency of each of the first signal and the second signal is the second frequency; and a combiner to synthesize the first signal amplified by the first amplifier and the second signal amplified by the second amplifier.

An outphasing amplifier includes a first amplifier configured to amplify a first signal, a second amplifier configured to amplify a second signal of which a phase difference from the first signal changes, and a synthesizer that has a first transmission line through which a third signal output from the first amplifier passes, a second transmission line through which a fourth signal output from the second amplifier passes, a first coupling circuit that is separately provided from the first transmission line and is coupled to the first transmission line, a second coupling circuit that is separately provided from the second transmission line and coupled to the second transmission line, and a node that synthesizes the third signal having passed through the first transmission line and the fourth signal having passed through the second transmission line.

One example includes a device that is comprised of a pre-power amplifier, a power amplifier, a signal path, and a dynamic bias circuit. The pre-power amplifier amplifies an input signal and outputs a first amplified signal. The power amplifier receives the first amplified signal and amplifies the first amplified signal based on a dynamic bias signal to produce a second amplified signal at an output thereof. The signal path is coupled between an output of the pre-power amplifier and an input of the power amplifier. The dynamic bias circuit monitors the first amplified signal, generates the dynamic bias signal, and outputs the dynamic bias into the signal path.

Systems and methods for a tunable impedance are provided. A tunable impedance includes a transistor assembly having two terminals and a control input. The transistor assembly includes one or more transistors electrically connected between the two terminals to provide a first impedance between the two terminals, based upon a control signal. One or more replica transistors react to the control signal in a similar fashion as the transistor assembly, to provide a replica impedance based upon the control signal. A control circuit is configured to generate the control signal based upon a voltage across the replica transistor(s) and/or a current through the replica transistor(s).

Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

A multi-band power amplifier module includes at least one transmission input terminal, at least one power amplifier circuit that receives a first transmission signal and a second transmission signal through the at least one transmission input terminal, a first filter circuit that allows the first transmission signal to pass therethrough, a second filter circuit that allows the second transmission signal to pass therethrough, at least one transmission output terminal through which the first and second transmission signals output from the first and second filter circuits are output, a transmission output switch that outputs each of the first and second transmission signals output from the at least one power amplifier circuit to the first filter circuit or the second filter circuit, and a first tuning circuit that adjusts impedance matching between the at least one power amplifier circuit and the at least one transmission output terminal.

Aspects of this disclosure relate to an acoustic wave resonator with transverse mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

A power amplifier circuit includes a first transistor having a first terminal to which a voltage corresponding to a variable power supply voltage is to be supplied and a second terminal to which a radio-frequency signal is to be supplied, the first transistor being configured to amplify the radio-frequency signal, a bias circuit configured to supply a bias current or voltage to the second terminal of the first transistor, and an adjustment circuit configured to adjust the bias current or voltage in accordance with the variable power supply voltage supplied from a power supply terminal.