Embodiments of a device and method are disclosed. In an embodiment, an RF amplifier includes first and second RF signal paths having RF input interfaces, RF output interfaces, and corresponding transistors connected between the respective RF input interfaces and RF output interfaces, wherein control terminals of the transistors are connected to the RF input interfaces and current conducting terminals of the transistors are connected to the corresponding RF output interfaces. The RF amplifier including a conductive path between the current conducting terminal of the first transistor and the current conducting terminal of the second transistor, wherein the conductive path includes a first inductance, a second inductance, and a capacitance electrically connected between the first inductance and the second inductance.

Apparatus and methods for LNAs with mid-node impedance networks are provided herein. In certain configurations, an LNA includes a mid-node impedance circuit including a resistor and a capacitor electrically connected in parallel, a cascode device electrically connected between an output terminal and the mid-node impedance circuit, and a transconductance device electrically connected between the mid-node impedance circuit and ground. The transconductance device amplifies a radio frequency signal received from an input terminal. The LNA further includes a feedback bias circuit electrically connected between the output terminal and the input terminal and operable to control an input bias voltage of the transconductance device.

A wireless access point is configured to regularly monitor the status of WLAN, WAN and ePDG data links to determine whether the current connections are sufficient to support VoWiFI services. When a device connects to the WLAN of the hub and attempts to switch from its VoLTE service to VoWiFi via the hub, the hub is configured to determine whether the current conditions can satisfy a VoWiFi connection. If the VoWiFi service can support the connection, the request is routed to the ePDG associated with the mobile device's subscriber LTE network. However, if the current conditions cannot satisfactorily support a VoWiFi connection such that incoming calls may be missed or the quality of active calls would not be clear, then the hub is configured to block the request so that the client device will time out and remain connected to VoLTE.

A multiple-path amplifier (e.g., a Doherty amplifier) includes a first transistor (e.g., a main amplifier FET), a second transistor (e.g., a peaking amplifier FET), a combining node, and a shunt-inductance circuit. The first and second amplifiers and the combining node structure are integrally-formed with a semiconductor die, and the shunt-inductance circuit is integrated with the die. Outputs of the first and second transistors are electrically coupled to the combining node structure. The shunt-inductance circuit is electrically coupled between the combining node structure and a ground reference node. The shunt-inductance circuit includes a shunt inductance (e.g., including wirebond(s) and/or spiral inductor(s)) that is integrated with the semiconductor die. The multiple-path amplifier also may include an integrated phase shifter/impedance inverter coupled between the outputs of the first and second transistors, and which is configured to impart a 90-degree phase delay between intrinsic drains of the first and second transistors.

A power amplifier module includes an amplifier that amplifies an input signal and outputs the amplified signal, a harmonic termination circuit that is disposed subsequent to the amplifier and that attenuates a harmonic component of the amplified signal, the harmonic termination circuit including at least one field effect transistor (FET), and a control circuit that controls a gate voltage of the at least one FET to adjust a capacitance value of a parasitic capacitance of the at least one FET. The control circuit adjusts the capacitance value of the parasitic capacitance of the at least one FET, and thereby a resonance frequency of the harmonic termination circuit is adjusted.

A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

A receiver front end (300) having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch (235) is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch (260) is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

A radio frequency amplifier includes a transistor, an input impedance matching circuit (e.g., a single-section T-match circuit or a multiple-section bandpass circuit), and a fractional harmonic resonator circuit. The input impedance matching circuit is coupled between an amplification path input and a transistor input terminal. An input of the fractional harmonic resonator circuit is coupled to the amplification path input, and an output of fractional harmonic resonator circuit is coupled to the transistor input terminal. The fractional harmonic resonator circuit is configured to resonate at a resonant frequency that is between a fundamental frequency of operation of the RF amplifier and a second harmonic of the fundamental frequency. According to a further embodiment, the fractional harmonic resonator circuit resonates at a fraction, x, of the fundamental frequency, wherein the fraction is between about 1.25 and about 1.9 (e.g., x≈1.5).

Embodiments of a device and method are disclosed. In an embodiment, an RF amplifier includes first and second RF signal paths having RF input interfaces, RF output interfaces, and corresponding transistors connected between the respective RF input interfaces and RF output interfaces, wherein control terminals of the transistors are connected to the RF input interfaces and current conducting terminals of the transistors are connected to the corresponding RF output interfaces. The RF amplifier including a conductive path between the current conducting terminal of the first transistor and the current conducting terminal of the second transistor, wherein the conductive path includes a first inductance, a second inductance, and a capacitance electrically connected between the first inductance and the second inductance.

Aspects disclosed herein eliminate audible disturbances that may occur when an audio amplifier is activated and deactivated. A feedback circuit is used to maintain a closed loop when transistors of a power output stage are activate or deactivated, thereby enabling the charge to build or dissipate without causing an audible disturbance. Further, in certain implementations, the power output stage may remain in an enable state for a period of time after deactivation of the audio amplifier regardless of whether an audio input signal is received enabling dissipation of charge without causing an audible disturbance.