Patent classifications
H03F2200/396
Apparatus and method for assisting envelope tracking with transient response in supply voltage for power amplifier
A power amplifier (PA) circuit includes a circuit for generating a supply voltage at an upper voltage rail for a power amplifier (PA). The circuit includes a DC-to-DC converter for generating a voltage from which the supply voltage is generated; a linear amplifier for sourcing or sinking current to or from the upper voltage rail via a capacitor for performing fine adjustment of the supply voltage; a first switching device coupled between an output of the linear amplifier and a lower voltage rail to selectively assist the linear amplifier sink current through the capacitor to deal with actual or anticipated transient response of the supply voltage; and a second switching device coupled between the upper voltage rail and the lower voltage rail to selectively discharge the capacitor in response to actual or anticipated transient response of the supply voltage.
Memory device
According to one embodiment, a memory device includes a memory cell including a resistance change memory element and a selector element, a word line, a bit line connected to one end of the memory cell, an operational amplifier including a non-inverting input connected to the bit line, an output circuit including a first terminal connected to an output of the operational amplifier, a second terminal connected to the bit line, and a charge/discharge circuit including a capacitor, a charge circuit and a discharge circuit, each including one end connected to an inverting input of the operational amplifier. At the time of falling of a write voltage for the memory cell, a potential of the other end of the memory cell is set higher than a potential of the other end of the discharge circuit.
Audio processing circuit and terminal device
An audio processing circuit includes a cascade operational amplifier circuit, an output node, and a pull-down circuit. The cascade operational amplifier circuit includes a first operational amplifier circuit and a second operational amplifier circuit. The first operational amplifier circuit includes a main operational amplifier and a secondary operational amplifier that are connected in parallel. The pull-down circuit is configured to pull down a voltage at the output node after the first operational amplifier circuit is turned on. The second operational amplifier circuit is configured to, after the secondary operational amplifier is turned on, control a voltage gain of the secondary operational amplifier to change gradually from low to high.
INTERFACE CIRCUITRY WITH SERIES SWITCH AND SHUNT ATTENUATOR
Methods, systems, and circuities for selectively connecting an RF signal to front end circuitry and selectively attenuating the RF signal are disclosed. In one example, an interface circuitry includes switching circuitry and attenuator circuitry. The switching circuitry is connected in series between an output of an amplifier and a front end circuitry configured to transmit a radio frequency (RF) signal output by the amplifier. The switching circuitry connects the output of the amplifier to a selected one or more front end circuitry inputs to create one or more signal paths. The attenuator circuitry is connected between the output of the amplifier and ground to create an attenuation path in a shunt configuration relative to the one or more signal paths. The attenuator circuitry is configured to attenuate the RF signal.
Semiconductor device and cell potential measuring apparatus
The present disclosure relates to a semiconductor device and a cell potential measuring apparatus capable of amplifying and reading a potential of solution with high accuracy. A reading electrode reads the potential of the solution. A differential amplifier includes a current mirror circuit. The reading electrode is connected to a first input terminal of the differential amplifier which is connected to a gate of a first input transistor connected to a diode-connected pMOS transistor of the current mirror circuit. An output terminal of the differential amplifier is connected to a second input terminal of the differential amplifier, which is connected to a gate of a second input transistor connected to a pMOS transistor of the current mirror circuit which is not diode-connected, via a capacitor. For example, the present disclosure is applied to the cell potential measuring apparatus and the like.
Feed-forward power amplifier with offline tuning capability
A method and base station transmitter for providing offline tuning of a base station transmitter. The base station transmitter includes a feed-forward power amplifier comprising a Radio Frequency (RF) input and an RF output. The base station transmitter also includes a simulated carrier generator operatively coupled to the feed-forward power amplifier prior to the carrier cancellation loop. The simulated carrier generator provides a simulated carrier signal including one or more individual carrier frequencies to the RF input. The base station transmitter also includes a processor that is operatively coupled to the feed-forward power amplifier and the simulated carrier generator. The processor performs tuning of a carrier cancellation loop using the simulated carrier signal when the processor determines that a carrier signal is not present.
Method for aliasing reduction in auto zero amplifier
An electronic circuit comprises a primary amplifier circuit including a differential input and an output, an offset nulling amplifier circuit, and an impedance matching circuit. The offset nulling amplifier circuit includes a differential input and an output. The differential input of the primary amplifier circuit is operatively coupled to a differential input of the offset nulling amplifier circuit and the impedance matching circuit. The output of the offset nulling amplifier circuit is operatively coupled to the primary amplifier circuit and provides a voltage to reduce offset in an output signal of the primary amplifier circuit.
METHOD FOR ALIASING REDUCTION IN AUTO ZERO AMPLIFIER
An electronic circuit comprises a primary amplifier circuit including a differential input and an output, an offset nulling amplifier circuit, and an impedance matching circuit. The offset nulling amplifier circuit includes a differential input and an output. The differential input of the primary amplifier circuit is operatively coupled to a differential input of the offset nulling amplifier circuit and the impedance matching circuit. The output of the offset nulling amplifier circuit is operatively coupled to the primary amplifier circuit and provides a voltage to reduce offset in an output signal of the primary amplifier circuit.
DIFFERENTIAL AMPLIFIER SCHEMES FOR SENSING MEMORY CELLS
Methods, systems, and devices for differential amplifier schemes for sensing memory cells are described. In one example, a memory apparatus may include a differential amplifier having a first input node configured to be coupled with a memory cell and having an output node configured to be coupled with a sense component. In some examples, the memory apparatus may also include a capacitor having a first node coupled with the first input node, and a first switching component configured to selectively couple a second node of the capacitor with the output node. The differential amplifier may configured such that a current at the output node is proportional to a difference between a voltage at the first input node of the differential amplifier and a voltage at the second input node of the differential amplifier.
DIFFERENTIAL AMPLIFIER, PIXEL CIRCUIT AND SOLID-STATE IMAGING DEVICE
A pixel circuit includes a differential amplifier. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The differential amplifier includes an input differential pair including first and second NMOS transistors, a current mirror pair including PMOS transistors, and a constant current source including a fifth NMOS transistor. A threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of the fifth NMOS transistor. Further, the threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of another NMOS transistor.