A high frequency power amplifier includes a first high frequency amplifier, a final high frequency amplifier, and a tunable filter. The tunable filter is connected between the first high frequency amplifier and the final high frequency amplifier. The first high frequency amplifier and the final high frequency amplifier are each a multimode/multiband power amplifier. The tunable filter is regulated such that its pass band includes the frequency band of a transmission signal and its attenuation band includes the frequency band of a reception signal in a communication band used in transmission and reception. The pass band and the attenuation band are switched by the tunable filter in accordance with the communication band used in transmission and reception.

A transmitter according to the present invention includes: a baseband amplitude value distribution processor (90) for changing a distribution of an amplitude value of a baseband signal based on a control signal that has been input and outputting the baseband signal as an output signal; a digital transmitter (91) that ΔΣ modulates the output signal and transmits the modulated signal; an in-band distortion measurement unit (92) for measuring an in-band distortion amount of the output signal; an amplitude value distribution measurement unit (93) for calculating an amplitude value distribution of the output signal; a sideband distortion prediction unit (94) for predicting a sideband distortion amount occurring in the output signal by the digital transmitter (91) from the calculated amplitude value distribution; and a baseband processing controller (95) for adjusting the control signal based on the measured in-band distortion amount and the sideband distortion amount and outputting the adjusted signal.

Disclosed is a transimpedance amplifier, comprising a first-stage trans-conductance amplifier TCA, a second-stage TCA, a third-stage amplifier and a feedback circuit. The first-stage TCA is electrically connected to an input current source to receive a first input signal, and outputs a first output signal. The second-stage TCA is electrically connected to the first-stage TCA to receive the first output signal, and outputs a second output signal. The third-stage amplifier is electrically connected to the second-stage TCA to receive the second output signal, and outputs a third output signal. One end of the feedback circuit is electrically connected to the input of the first-stage TCA, and the other end of the feedback circuit is electrically connected to the output of the third-stage amplifier to stabilize the third output signal. The third-stage amplifier is composed of a first output stage and a second output stage.

A multistage linear power amplifier receiving an input signal. The multistage linear power amplifier comprises a plurality of Class-AB amplifiers connected in a cascade configuration. The plurality of Class-AB amplifiers amplifies the input signal to generate an amplified input signal. At least one of the plurality of Class-AB amplifiers is biased such that the multistage linear power amplifier emulates a Class-C amplifier.

A gate bias circuit for a plurality of GaAs amplifier stages is a transistor coupled to a temperature compensation current received from a CMOS control stage. A plurality of pHEMPT amplifier stages are coupled to the gate bias circuit and to a control voltage which switches the amplifier stage. A selectively controlled stage pass transistor enables a current mirror between the gate bias circuit and each stage amplifying transistor. The penultimate pHEMPT amplifier stage is coupled to a CMOS amplifier. A CMOS circuit provides both the temperature compensation current by a proportional to absolute temperature (PTAT) circuit and the control voltage enabling each pHEMPT transistor to receive its input signal in combination with the gate bias voltage.

A die is described comprising at least one 3-way Doherty amplifier comprising a main stage, a first peak stage and a second peak stage. An input is connected to an input network which is connected to the main stage, first peak stage and second peak stage. The input network includes a first impedance connected to an input of the first peak stage and providing a −90° phase shift and a second impedance connected to an input of the second peak stage and providing a 90° phase shift. An output is connected to an output network which is connected to the main stage, first peak stage and second peak stage. The output network includes a third impedance connected to the output of the first peak stage and providing a 180° phase shift and a fourth impedance connected to the output of the main stage and providing a 90° phase shift.

Radio Frequency (RF) amplifiers with voltage limiting using non-linear feedback are presented herein. According to one aspect, an RF amplifier comprises an amplifier circuit having an input terminal and an output terminal and a non-linear feedback circuit having an input terminal and an output terminal. The input terminal of the non-linear feedback circuit is connected to the output terminal of the amplifier circuit and the output terminal of the non-linear feedback circuit is connected to the amplifier circuit to reduce the gain of the amplifier circuit when an RF voltage swing present at the input terminal of the non-linear feedback circuit exceeds a predefined threshold. In one embodiment, the output terminal of the non-linear feedback circuit is connected to the input terminal of the amplifier circuit. In another embodiment, the output terminal of the non-linear feedback circuit is connected to a bias circuit of the amplifier circuit.

The disclosure generally relates to a compact bypass and decoupling structure that can be used in a millimeter-wave radio frequency integrated circuit (RFIC). For example, according to various aspects, an RFIC incorporating the compact bypass and decoupling structure may comprise a grounded substrate, a mid-metal ground plane, a bypass capacitor disposed between the grounded substrate and the mid-metal ground plane, and a decoupling inductor disposed over the mid-metal ground plane. The bypass capacitor may close a current loop in the RFIC and the decoupling inductor may provide damping in a supply network associated with the RFIC. Furthermore, the decoupling conductor may have a self-resonance substantially close to an operating band associated with the RFIC to increase series isolation, introduce substrate losses that facilitate the damping in the supply network, and prevent high-Q resonances.

A power amplifier circuit includes a power amplifier that amplifies the power of a high frequency signal, a power amplifier temperature detector circuit that includes a temperature detection element, the temperature detection element being thermally coupled with the power amplifier, a bias control signal generator circuit that generates a bias control signal for the power amplifier based on a temperature detection signal outputted from the power amplifier temperature detector circuit, and a regulator circuit that stabilizes the temperature detection signal. The power amplifier, the power amplifier temperature detector circuit, and the regulator circuit are formed in a first integrated circuit, and the bias control signal generator circuit is formed in a second integrated circuit. The substrate material (for example, GaAs) of the first integrated circuit has a higher cutoff frequency than the substrate material (for example, SOI) of the second integrated circuit.

A pulse shaping circuit is configured to shape a waveform of an edge of a signal applied to a switch of a power amplifier included in an on-off keying transmitter.