An automatic gain control (AGC) circuit and method are provided herein to control the gain, and the gain step size, of an amplifier circuit based on a duration of a detected overload condition. According to one embodiment, a method of gain control may include comparing a received signal to a threshold value, detecting an overload condition if the received signal exceeds the threshold value, detecting a duration of the overload condition, and controlling the gain, and the gain step size, of the amplifier circuit based on the detected duration of the overload condition.

System-on-chip (SOC) products using high frequency, wideband, highly linear, CMOS and BiCMOS processes will be the next evolution of wireless and wireline communications integrated circuits. Aspects described herein can provide enhanced overall performance over existing prior art single-ended, wideband RF amplifier topologies. A single-ended third order intermodulation distortion nulling circuit can extend the dynamic range for wideband amplifiers up to an order-of-magnitude, without a DC power or noise figure (NF) penalty. The application of distortion nulling can be extended to all the building blocks used in CMOS/BiCMOS RF transceivers to improve performance. The application of this concept to all of the building blocks in an RF transceiver will allow the dynamic range of the transceiver to be increased without suffering a DC power dissipation increase or a significant noise increase.

An amplifier circuit with a differential input and a differential output comprises a first and a second pair of matched transistors having a first threshold voltage and comprising control terminals connected to the differential input. A first and a second pair of triplets of transistors having a second threshold voltage being different from the first threshold voltage is connected to each one of the pairs of matched transistors such that respective current paths are formed with these transistors. The currents are split up to bias current sources and to an output stage such that the current is reused for implementing a class AB operation. Furthermore, a current through bias transistors connected in the current path of the first and the second pair of matched transistors is mirrored to output transistors being arranged in a differential current path of the output stage.

A radio-frequency amplifier circuit includes a first amplifier transistor configured to amplify and output a radio-frequency signal supplied to a base of the first amplifier transistor, a first bias transistor that is connected to the first amplifier transistor to form a current mirror and configured to supply a bias to the base of the first amplifier transistor, a second bias transistor that is connected to the base of the first amplifier transistor to form an emitter follower and configured to supply a bias to the base of the first amplifier transistor, and a first capacitor having a first end connected to the base of the first amplifier transistor and a second end connected to an emitter of the second bias transistor.

A high frequency amplifier circuit includes a transistor including a drain, a gate, and a source, an inductance-capacitor (LC) tank connected to the drain, and a transformer connected to the gate and the source.

Power amplification system is disclosed. A power amplification system can include a Class-E push-pull amplifier including a transformer balun. The power amplification can further include a reactance compensation circuit coupled to the transformer balun. In some embodiments, the reactance compensation circuit is configured to reduce variation over frequency of a fundamental load impedance of the power amplification system.

A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.

A device includes a variable gain amplifier, a voltage shifter, a variable gain amplifier half replica module, and an analog to digital converter. The variable gain amplifier includes an input terminal to receive an input signal, an output terminal to provide a first output signal that is biased based on a first common-mode voltage reference. The voltage shifter circuit includes first and second input terminals, and an output terminal to provide, to the analog to digital converter, a third output signal that is biased based on a second common-mode voltage reference. The variable gain amplifier half replica module includes an output terminal coupled to the second input terminal of the voltage shifter circuit, the variable gain amplifier half replica module to control the third output signal of the voltage shifter circuit based on the first common-mode voltage reference and the second common-mode voltage reference.

An amplifier comprises a common emitter stage coupled to a first and a second input, a common base stage coupled to the common emitter stage and to a first and a second output, and a cancellation path coupled to the common emitter stage and the common base stage and to the first and second outputs. The cancellation path generates a first cancellation signal that is 180 degrees out of phase with a first leakage signal at the first output and a second cancellation signal that is 180 degrees out of phase with a second leakage signal at the second output. The cancellation path comprises a first cancellation transistor coupled to the common emitter stage and the common base stage and to the first output and a second cancellation transistor coupled to the common emitter stage and the common base stage and to the second output.

Aspects of the present disclosure provide a high voltage switch with a fast turn-off. An example power supply circuit generally includes a capacitive element for coupling to a power terminal of an amplifier, a first switch configured to be closed in a first mode and to be open in a second mode, a second switch coupled in series between the first switch and the capacitive element and configured to be closed in the first mode and to be open in the second mode, a first circuit coupled to the first switch and configured to charge the capacitive element and power the amplifier in the first mode, and a buffer circuit having an output coupled to a first node and configured to output a first voltage level greater than half of a second voltage level at a second node.