An embodiment of a module (e.g., an amplifier module) includes a substrate, a transmission line, and a ground plane height variation structure. The substrate is formed from a plurality of dielectric material layers, and has a mounting surface and a second surface opposite the mounting surface. A plurality of non-overlapping zones is defined at the mounting surface. The transmission line is coupled to the substrate and is located within a first zone of the plurality of non-overlapping zones. The ground plane height variation structure extends from the second surface into the substrate within the first zone. The ground plane height variation structure underlies the transmission line, a portion of the substrate is present between the upper boundary and the transmission line, and the ground plane height variation structure includes a conductive path between an upper boundary of the ground plane height variation structure and the second surface.

According to one embodiment, an amplifier circuit includes N (N>=3) transistors, two first branches and N2 second branches. The N (N>=3) transistors are connected in parallel. The two first branches each include the transistor and a first transmission line which is connected to an output terminal of the transistor. The N2 second branches each include the transistor and a second transmission line which is connected to the output terminal of the transistor. For each of the first branches, a sum between an electrical length of a parasitic component of the transistor and the electrical length of the first transmission line are odd multiples of approximately 90 degrees. For each of the second branches, the sum between the electrical length of the parasitic component of the transistor and the electrical length of the second transmission line are multiples of approximately 180 degrees.

Spatial power-combining devices for higher frequency operation and increased bandwidth applications are disclosed. The spatial power-combining device includes a center waveguide section with a plurality of amplifier assemblies. The plurality of amplifier assemblies forms an input end and an output end, and an input inner conductor is mechanically attached to the input end, and an output inner conductor is mechanically attached to the output end. A method for joining a plurality of amplifier assemblies together to provide a center waveguide with an input end including an input connector receptacle and an output end including an output connector receptacle is also disclosed.

An amplifier device includes an input terminal, an output terminal, a first transistor having a control terminal and first and second current-carrying terminals, and a class-J circuit coupled between the second current-carrying terminal of the first transistor and the output terminal and configured to harmonically terminate the first transistor. The class-J circuit may include a first resonator, characterized by a first resonant frequency substantially equal to a second harmonic frequency. The first resonator may be coupled between the second current-carrying terminal and a voltage reference. A shunt inductor that is distinct from the first resonator may be coupled between the second current-carrying terminal and the voltage reference.

A control circuit (16) is configured to detect the impedance P1 of a load (3) and control each of the reactance value L1 of a first variable reactance element (12), the reactance value L2 of a second variable reactance element (14), and the phase shift amount of a phase shifter (15) on the basis of the detected impedance P1. Consequently, impedance matching can be achieved even with the phase shifter (15) that performs discrete phase shift control.

Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

An embodiment of an amplifier includes a first amplifier with a first output terminal, a second amplifier with a second output terminal, and a plurality of microstrip transmission lines electrically connected to the amplifiers. The transmission lines include an impedance inverter line electrically connected between the first and second output terminals, and an output line electrically connected between the second output terminal and an output of the amplifier, where the output line forms a portion of an output impedance transformer. The amplifier also includes a directional coupler formed from a main line and a coupled line positioned in proximity to the main line, where the main line is formed from a portion of one of the transmission lines. The amplifier may also include a module substrate with a plurality of metal layers, where the main line and the coupled line are formed from different portions of the metal layers.

A radio frequency (RF) amplifier circuit includes an amplifier device and a first baseband bias circuit. The amplifier device includes a first input configured to receive a first signal to be amplified and a first output configured to output a first amplified signal. The first baseband bias circuit includes an input coupled to the first output of the amplifier device. The first baseband bias circuit includes a first envelope decoupling circuit and a first harmonic decoupling circuit. The first envelope decoupling circuit includes a first bulk capacitor and a first distributed inductor configured to resonate in a baseband frequency range. The first harmonic decoupling circuit includes a second bulk capacitor and a second distributed inductor configured to resonate at a harmonic frequency of the frequency of the first signal received at the input of the amplifier device.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

Apparatus are provided for amplifier systems and related circuits are provided. An exemplary circuit includes a main amplifier arrangement, first impedance matching circuitry coupled between the output of the main amplifier arrangement and a first circuit output, a peaking amplifier arrangement, and second impedance matching circuitry coupled between the output of the peaking amplifier arrangement and a second output of the circuit. In one exemplary embodiment, the first impedance matching circuitry and the second impedance matching circuitry have different circuit topologies and different physical topologies.